Temperature correction information calculation device, semiconductor manufacturing apparatus, storage medium, and temperature correction information calculation method

Patent metadata

Field	Value
Publication number	US-12431396-B2
Application number	US-202217828487-A
Country	US
Kind code	B2
Filing date	May 31, 2022
Priority date	Jun 8, 2021
Publication date	Sep 30, 2025
Grant date	Sep 30, 2025

Abstract

A temperature correction information calculation device includes a model storage unit that stores a model for generating temperature correction information in which a temperature correction value is associated with a cumulative film thickness on an inner wall of a semiconductor manufacturing apparatus that forms a film on a processing target object by a heat treatment at a set temperature corrected according to the cumulative film thickness; a learning determination unit that determines whether or not to update the model when a film forming result by the heat treatment is obtained; a model learning unit that updates the model based on the film forming result when the learning determination unit determines to update the model; and a temperature correction information generation unit that generates the temperature correction information using the model updated by the model learning unit and corrects the set temperature by the temperature correction information.

First claim

What is claimed is:

1. A temperature correction information calculation device of a semiconductor manufacturing apparatus, the temperature correction information calculation device comprising:
a model storage circuitry configured to store a model for generating temperature correction information in which a temperature correction value is associated with a cumulative film thickness that is accumulated on an inner wall of the semiconductor manufacturing apparatus that forms a film on a processing target object by a heat treatment at a set temperature corrected according to the cumulative film thickness;
a learning determination circuitry configured to determine whether or not to update the model based on whether there is an external disturbance in a film forming result obtained by the heat treatment;
a model learning circuitry configured to update the model based on the film forming result on the processing target object when the learning determination circuitry determines to update the model; and
a temperature correction information generation circuitry configured to generate the temperature correction information using the model updated by the model learning circuitry and correct the set temperature by the temperature correction information.

2. The temperature correction information calculation device according to claim 1 , wherein the learning determination circuitry determines not to update the model when determined that the film forming result is affected by the external disturbance.

3. The temperature correction information calculation device according to claim 2 , wherein the learning determination circuitry determines not to update the model when hardware included in the semiconductor manufacturing apparatus has been replaced before the film forming result is obtained.

4. The temperature correction information calculation device according to claim 2 , wherein the learning determination circuitry determines not to update the model when a parameter related to film formation has been edited.

5. The temperature correction information calculation device according to claim 2 , wherein the learning determination circuitry determines not to update the model when a position of the processing target object on which film thickness is monitored has been changed before the film forming result is obtained.

6. The temperature correction information calculation device according to claim 2 , wherein the learning determination circuitry determines not to update the model when a predetermined amount of time has been elapsed from a last update of the model to a current heat treatment.

7. The temperature correction information calculation device according to claim 2 , wherein the learning determination circuitry determines not to update the model when determined based on a history of the processing target object managed by a management device that a surface state of the processing target object is different from that at the last update of the model.

8. The temperature correction information calculation device according to claim 2 , wherein the learning determination circuitry determines not to update the model when an output of a heater or cooling fan is equal to or greater than a certain level in a heat treatment having the film forming result obtained.

9. The temperature correction information calculation device according to claim 2 , wherein the learning determination circuitry determines not to update the model when an in-plane distribution of the film thickness of the processing target object or a difference in film thickness between processing target objects does not satisfy a criterion.

10. The temperature correction information calculation device according to claim 2 , wherein the learning determination circuitry determines to update the model when the film forming result of the heat treatment after the update of the model deviates from a target film thickness compared to the film forming result before the update.

11. A semiconductor manufacturing apparatus comprising the temperature correction information calculation device according to claim 1 .

12. A temperature correction information calculation method of a semiconductor manufacturing apparatus, the method comprising:
obtaining a film forming result from a heat treatment performed on a processing target object at a set temperature corrected according to a cumulative film thickness that is accumulated on an inner wall of the semiconductor manufacturing apparatus;
determining whether or not to update a model for generating temperature correction information in which a temperature correction value is associated with the cumulative film thickness based on whether there is an external disturbance in the film forming result obtained by the heat treatment at the obtaining;
updating the model based on the film forming result on the processing target object when determined to update the model at the determining; and
generating the temperature correction information using the model updated at the updating.

13. A non-transitory computer-readable storage medium having stored therein a program that causes a temperature correction information calculation device of a semiconductor manufacturing apparatus to function as:
a model storage circuitry configured to store a model for generating temperature correction information in which a temperature correction value is associated with a cumulative film thickness that is accumulated on an inner wall of the semiconductor manufacturing apparatus that forms a film on a processing target object by a heat treatment at a set temperature corrected according to the cumulative film thickness;
a learning determination circuitry configured to determine whether or not to update the model based on whether there is an external disturbance in a film forming result obtained by the heat treatment;
a model learning circuitry configured to update the model based on the film forming result on the processing target object when the learning determination circuitry determines to update the model; and
a temperature correction information generation circuitry configured to generate the temperature correction information using the model updated by the model learning circuitry and correct the set temperature by the temperature correction information.

Assignees

• Tokyo Electron Ltd

Inventors

• Watanabe Tatsuya
• Takenaga Yuichi

Classifications

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10P72/0604

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• H10P72/0431

  Apparatus for thermal treatment · CPC title

• H10P74/238 Primary

  comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title

• H10P72/0602 Primary

  Temperature monitoring · CPC title