Active gas generation apparatus

Patent metadata

Field	Value
Publication number	US-12424418-B2
Application number	US-202218570654-A
Country	US
Kind code	B2
Filing date	May 18, 2022
Priority date	May 18, 2022
Publication date	Sep 23, 2025
Grant date	Sep 23, 2025

Abstract

An object of the present disclosure is to obtain an active gas generation apparatus capable of supplying a highly concentrated active gas from a gas ejection port to a processing space at a subsequent stage. Then, in the active gas generation apparatus ( 51 ) of the present disclosure, in a main dielectric space being a space in which an electrode dielectric film ( 30 ) and an electrode dielectric film ( 40 ) face each other, a region where electrode conductive films ( 31 ) and ( 41 ) overlap each other in a plan view is defined as a main discharge space ( 50 ). In an auxiliary dielectric space being a space where the electrode dielectric film 30 and a shield dielectric film 8 face each other, a region including a dielectric through hole ( 14 ) and a cover through hole ( 15 ) is defined as an auxiliary discharge space ( 58 ). The auxiliary discharge space ( 58 ) includes a part of a buffer space ( 9 ) above the shield dielectric film ( 8 ), and a path leading from the auxiliary discharge space ( 58 ) to the gas ejection port ( 61.62 ) is defined as an active gas flow path.

First claim

The invention claimed is:

1. An active gas generation apparatus configured to generate an active gas by activating a source gas supplied to a discharge space, the active gas generation apparatus comprising:
a housing configured to house an electrode structure in an in-housing space, the housing having conductivity; and
the electrode structure disposed on a bottom surface of the housing,
wherein the housing has a bottom surface structure including a flat surface and a buffer space recessed in a depth direction from the flat surface, and the electrode structure is disposed to close the buffer space,
wherein the electrode structure includes:
a first electrode component, and
a second electrode component provided below the first electrode component,

wherein the first electrode component includes a first electrode dielectric film and a first electrode conductive film formed on an upper surface of the first electrode dielectric film,
wherein the second electrode component includes a second electrode dielectric film and a second electrode conductive film formed on a lower surface of the second electrode dielectric film, and the second electrode conductive film and the flat surface of the housing are in contact with each other,
wherein the second electrode dielectric film has a dielectric through hole penetrating the second electrode dielectric film in a region overlapping the buffer space in a plan view, the second electrode conductive film has a conductive film opening in a region overlapping the buffer space in a plan view, the conductive film opening overlaps the dielectric through hole in a plan view, and an outer circumferential line of the conductive film opening is defined as an electrode boundary line,
wherein the second electrode component further includes a cover dielectric film covering the electrode boundary line of the second electrode conductive film in the buffer space, and the cover dielectric film has a cover through hole penetrating the cover dielectric film in a region overlapping the dielectric through hole in a plan view,
the active gas generation apparatus further comprising:
a shield dielectric film provided in a region overlapping the dielectric through hole and the cover through hole in a plan view on a bottom surface of the buffer space, and
a gas ejection port provided to penetrate a bottom surface of the buffer space in a peripheral region of the shield dielectric film,
wherein the gas ejection port overlaps the cover dielectric film in a plan view, and does not overlap the dielectric through hole nor the cover through hole in a plan view,
wherein an AC voltage is applied to the first electrode conductive film, and the second electrode conductive film is set to a reference potential through the housing,
wherein a space in which the first electrode dielectric film and the second electrode dielectric film face each other is defined as a main dielectric space, and a space in which the first electrode dielectric film and the shield dielectric film face each other is defined as an auxiliary dielectric space,
wherein a region where the first and second electrode conductive films overlap in a plan view in the main dielectric space is defined as a main discharge space, a region including the dielectric through hole and the cover through hole in the auxiliary dielectric space is defined as an auxiliary discharge space, and the auxiliary discharge space includes a part of the buffer space above the shield dielectric film,
wherein the discharge space includes the main discharge space and the auxiliary discharge space, and
wherein a path leading from the auxiliary discharge space to the gas ejection port is defined as an active gas flow path.

2. The active gas generation apparatus according to claim 1 ,
wherein the cover through hole includes first and second cover through holes,
wherein the dielectric through hole includes first and second dielectric through holes,
wherein the conductive film opening includes first and second conductive film openings,
wherein the electrode boundary line includes first and second electrode boundary lines,
wherein the gas ejection port includes first and second gas ejection ports,
wherein the auxiliary discharge space includes first and second auxiliary discharge spaces,
wherein the active gas flow path includes first and second active gas flow paths,
wherein the first dielectric through hole and the first cover through hole overlap each other in a plan view, and the second dielectric through hole and the second cover through hole overlap each other in a plan view,
wherein the first conductive film opening overlaps the first dielectric through hole in a plan view, the second conductive film opening overlaps the second dielectric through hole in a plan view, an outer circumferential line of the first conductive film opening is defined as the first electrode boundary line, and an outer circumferential line of the second conductive film opening is defined as the second electrode boundary line,
wherein the first gas ejection port does not overlap the first dielectric through hole nor the first cover through hole in a plan view, and the second gas ejection port does not overlap the second dielectric through hole nor the second cover through hole in a plan view,
wherein two spaces in which the first electrode dielectric film and the shield dielectric film face each other are defined as first and second auxiliary dielectric spaces, the first and second auxiliary dielectric spaces are separated from each other, and the auxiliary dielectric space includes the first and second auxiliary dielectric spaces,
wherein a region including the first dielectric through hole and the first cover through hole in the first auxiliary dielectric space is defined as the first auxiliary discharge space, a region including the second dielectric through hole and the second cover through hole in the second auxiliary dielectric space is defined as the second auxiliary discharge space, and the first and second auxiliary discharge spaces are separated from each other,
wherein each of the first and second auxiliary discharge spaces includes a part of the buffer space above the shield dielectric film, and
wherein a path leading from the first auxiliary discharge space to the first gas ejection port in the buffer space is defined as the first active gas flow path, and a path leading from the second auxiliary discharge space to the second gas ejection port is defined as the second active gas flow path.

3. The active gas generation apparatus according to claim 2 ,
wherein the buffer space includes a first buffer space and a second buffer space, and the first and second buffer spaces are provided to be separated from each other,
wherein the cover dielectric film includes first and second cover dielectric films,
wherein the shield dielectric film includes first and second shield dielectric films,
wherein the first cover through hole is provided to penetrate the first cover dielectric film, and the second cover through hole is provided to penetrate the second cover dielectric film,
wherein the first dielectric through hole, the first conductive film opening, and the first cover through hole overlap the first buffer space in a plan view, and the second dielectric through hole, the second conductive film opening, and the second cover through hole overlap the second buffer space in a plan view,
wherein the first cover dielectric film covers the first electrode boundary line, and the second cover dielectric film covers the second electrode boundary line,
wherein the first shield dielectric film is provided on a bottom surface of the first buffer space, and the second shield dielectric film is provided on a bottom surface of the second buffer space,
wherein the first shield dielectric film overlaps the first dielect

Assignees

• Toshiba Mitsubishi Electric Industrial Systems Corp
• Tmeic Corp

Inventors

• Arita Ren
• Watanabe Kensuke

Classifications

• H01J2237/038

  Insulating · CPC title

• H01J2237/036

  Spacing · CPC title

• H01J2237/032

  Mounting or supporting · CPC title

• H01J37/32559

  Protection means, e.g. coatings · CPC title

• H01J37/32541

  Shape · CPC title