RF switch device including multi-width air gaps

Patent metadata

Field	Value
Publication number	US-12406927-B2
Application number	US-202217730495-A
Country	US
Kind code	B2
Filing date	Apr 27, 2022
Priority date	May 12, 2021
Publication date	Sep 2, 2025
Grant date	Sep 2, 2025

Abstract

An RF switch device in a stacked configuration and a method of manufacturing the same seek to reduce or eliminate a voltage imbalance, a condition in which different voltages are applied to different stages of the RF switch device, by forming air gaps on or over corresponding gate electrodes, in which each of the air gaps in a single stage has a different width.

First claim

The invention claimed is:

1. An RF switch device, comprising:
a semiconductor layer;
gate electrodes spaced apart from each other in a single stage and on the semiconductor layer;
sources in the semiconductor layer;
drains in the semiconductor layer;
a lower source contact connected to one of the sources;
a first lower metal structure connected to the lower source contact;
an upper source contact connected to the first lower metal structure;
a first upper metal structure connected to the upper source contact;
a lower drain contact connected to one of the drains;
a second lower metal structure connected to the lower drain contact;
an upper drain contact connected to the second lower metal structure;
a second upper metal structure connected to the upper drain contact; and
air gaps configured such that, in the single stage and on or over each gate electrode, at least one of the air gaps has a different width than other ones of the air gaps,
wherein the first upper metal structure includes:
a source tab extending along a first direction; and
a plurality of source extensions extending in a second direction from the source tab,

the second upper metal structure includes:
a drain tab extending in the first direction and spaced apart from the source tab in the second direction; and
a plurality of drain extensions extending in the second direction from the drain tab, and

each of the source extensions and the drain extensions has a length less than half a distance between the source tab and the drain tab in the second direction.

2. The RF switch device of claim 1 , comprising multiple stages, the multiple stages including the single stage.

3. The RF switch device of claim 2 , wherein the air gaps within the single stage have different widths to reduce or eliminate a voltage imbalance in the RF switch device.

4. The RF switch device of claim 1 , wherein the source extensions and the drain extensions do not overlap each other along the first direction.

Assignees

• Db Hitek Co Ltd

Inventors

• Lim Ki Won
• Jung Jin Hyo
• Kim Hae Taek
• Eom Seung Hyun
• Koo Ja Geon
• Lee Hyun Joong
• Lee Sang Yong

Classifications

• H10W20/063

  by forming conductive members before forming protective insulating material · CPC title

• H10W20/48

  Insulating materials thereof · CPC title

• H10W20/072 Primary

  of dielectric parts comprising air gaps · CPC title

• H10W20/46

  comprising air gaps · CPC title

• H10W20/47

  comprising two or more dielectric layers having different properties, e.g. different dielectric constants · CPC title