Apparatus for processing a plurality of substrates provided with an extractor chamber

Patent metadata

Field	Value
Publication number	US-12366410-B2
Application number	US-202217810759-A
Country	US
Kind code	B2
Filing date	Jul 5, 2022
Priority date	Jul 6, 2021
Publication date	Jul 22, 2025
Grant date	Jul 22, 2025

Abstract

An apparatus 1 for processing a plurality of substrates 3 is provided. The apparatus may have a process tube 5 creating a process chamber 7 ; a heater 9 surrounding the process tube 5 ; a flange 11 for supporting the process tube; and a door 15 configured to support a wafer boat 17 with a plurality of substrates 3 in the process chamber and to seal the process chamber 7 . An exhaust operably connected to the process chamber 7 may be provided to remove gas from the process chamber via a first exhaust duct 19 . The apparatus may be provided with an extractor chamber 21 surrounding the first exhaust duct where it connects to the process chamber and connected to a second exhaust duct 23 to remove gas from the extractor chamber.

First claim

The invention claimed is:

1. A system for processing a plurality of substrates, comprising;
a process tube creating a process chamber;
a heater surrounding the process tube for heating the process chamber;
a flange for supporting the process tube and comprising a flange opening giving access to an opening of the process tube;
a door configured to support, in the process chamber, a wafer boat with a plurality of substrates and to seal the process chamber;
a first exhaust duct operably connected to the process chamber and configured to remove gas from the process chamber;
an extractor chamber operably connected to a space between the process chamber and the heater and comprising:
at least a portion of the first exhaust duct;
at least a portion of a gas injection tube operably connected to the process chamber to provide process gas into the process chamber;
a process gas production unit operably connected to the gas injection tube and configured to provide process gas into the process chamber; and
a second exhaust duct configured to remove both first gas from the space and second gas leaked from the process gas production unit in the extractor chamber, wherein the second exhaust duct is not connected to the first exhaust duct, and wherein a first gas flow in the first exhaust duct is different from a second gas flow in the second exhaust duct.

2. The system of claim 1 , wherein the process gas production unit is operably connected to a first production gas line.

3. The system of claim 1 , wherein the process gas production unit is provided with a first production gas line and a second production gas line.

4. The system of claim 3 , wherein the first production gas line is arranged to provide hydrogen.

5. The system of claim 3 , wherein the second production gas line is arranged to provide oxygen.

6. The system of to claim 1 , wherein the process gas comprises hydrogen and oxygen.

7. The system of claim 1 , wherein the extractor chamber is provided with openings to create a flow in the extractor chamber and the second exhaust duct.

8. The system of to claim 7 , wherein the openings are provided at one of the connections of:
the first exhaust duct with the process chamber; and
the extractor chamber with the second exhaust duct.

9. The system of claim 1 , wherein the system is provided with a sidewall to limit access to the system.

10. The system of claim 9 , wherein the system is provided with a plurality of sidewalls.

11. The system of claim 9 , wherein the system is provided with a door in the sidewall giving access for maintenance.

12. The system of claim 1 , wherein the extractor chamber is provided with an extractor door for giving access to at least one of the process gas production unit, first exhaust duct and any other device in the extractor chamber.

13. The system of claim 1 , wherein the extractor chamber further comprises a valve.

14. The system of claim 13 , wherein a part of the valve is provided in a gas injection tube, the first exhaust duct, the second exhaust duct, or a production gas line.

15. The system of claim 1 , wherein the process chamber is an atmospheric process chamber operated at a pressure between 0.9 and 1.1 atmosphere (Atm).

16. The system of claim 1 , wherein the first gas comprises gas leaked from the heater or the process chamber.

17. The system of claim 1 , wherein the second gas further comprises gas leaked from the portion of the first exhaust duct and the portion of the gas injection tube.

Assignees

• Asm Ip Holding Bv

Inventors

• Oosterlaken Theodorus G M
• Garssen Adriaan
• Terhorst Herbert
• Jdira Lucian

Classifications

• H10P72/0434

  mainly by convection · CPC title

• H10P72/0402 Primary

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P72/7604

  the wafers being placed on a susceptor, stage or support · CPC title

• H10P72/0431

  Apparatus for thermal treatment · CPC title

• H10P72/0432 Primary

  mainly by conduction · CPC title