MEMS resonator integrated cicruit fabrication

Patent metadata

Field	Value
Publication number	US-12365582-B2
Application number	US-202418641815-A
Country	US
Kind code	B2
Filing date	Apr 22, 2024
Priority date	Jun 15, 2006
Publication date	Jul 22, 2025
Grant date	Jul 22, 2025

Abstract

A low-profile packaging structure for a microelectromechanical-system (MEMS) resonator system includes an electrical lead having internal and external electrical contact surfaces at respective first and second heights within a cross-sectional profile of the packaging structure and a die-mounting surface at an intermediate height between the first and second heights. A resonator-control chip is mounted to the die-mounting surface of the electrical lead such that at least a portion of the resonator-control chip is disposed between the first and second heights and wire-bonded to the internal electrical contact surface of the electrical lead. A MEMS resonator chip is mounted to the resonator-control chip in a stacked die configuration and the MEMS resonator chip, resonator-control chip and internal electrical contact and die-mounting surfaces of the electrical lead are enclosed within a package enclosure that exposes the external electrical contact surface of the electrical lead at an external surface of the packaging structure.

First claim

What is claimed is:

1. A method of fabricating an oscillator integrated circuit device, the method comprising:
mounting a first one of a control die or a MEMS resonator die to a lead frame;
depositing a thermally-conductive material;
physically-mounting a second one of the control die or the MEMS resonator die in a stacked relationship with the first one, such that the first one and the second one are physically coupled with each other through the thermally-conductive material;
wherein the method further comprises electrically-coupling the first one with the second one via at least one conductive path; and
wherein the method further comprises encapsulating at least one of the control die or the MEMS resonator die relative to the other, such that the at least one of the control die or the MEMS resonator die and the thermally-conductive material are completely encased relative to an ambient environment which is external to the oscillator integrated circuit.

2. The method of claim 1 wherein electrically-coupling comprises coupling the MEMS resonator die to the control die using wire bonds, and wherein encapsulating comprises depositing a mold compound in a manner that encases the MEMS die as well as the wire bonds relative to the ambient environment which is external to the oscillator integrated circuit device.

3. The method of claim 2 wherein:
the lead frame is supported by a tape;
encapsulating comprises depositing the mold compound in a manner that encases both the MEMS resonator die and the control die relative to the ambient environment which is external to the oscillator integrated circuit device; and
the method further comprises removing the tape following the encapsulating, wherein the lead frame also provides conductive paths between at least one of the MEMS resonator die or the control die and external electrical contacts of the oscillator integrated circuit device.

4. The method of claim 3 wherein physically-mounting comprises adhering a surface of the control die to the tape, such that the surface is coplanar with the more external electrical contacts and such that, following removal of the tape, the surface is also exposed to the ambient environment which is external to the oscillator integrated circuit device.

5. The method of claim 3 wherein physically-mounting comprises stacking the control die, the MEMS resonator die and the tape, with one another, such that one of the control die or the MEMS resonator die is sandwiched in between the tape and the other of the control die or the MEMS resonator die.

6. The method of claim 5 wherein stacking and encapsulating are performed in a manner such that a height of the oscillator integrated circuit device, along a height of the stacking, is no more than three hundred and fifty microns.

7. The method of claim 1 wherein the thermally-conductive material is a conductive epoxy having a coefficient of thermal expansion between 2×10 −6 /° C. and 170×10 −6 /° C., and wherein the conductive epoxy directly interfaces a side of the control die and a side of the MEMS resonator die.

8. The method of claim 1 wherein:
the oscillator integrated circuit device is a first oscillator integrated circuit device;
the method further comprises packaging a plurality of oscillator integrated circuit devices, including the first oscillator integrated circuit device, in common atop a tape; and
the method further comprises singulating the first oscillator integrated circuit device from the plurality of oscillator integrated circuit devices, prior to removing the tape.

9. The method of claim 8 wherein:
the singulating is performed in a manner such that the first oscillator integrated circuit device is sized to match a footprint of a commercially-sold quartz oscillator integrated circuit device.

10. The method of claim 8 wherein singulating is performed such that the oscillator integrated circuit device is sized to have a cross-sectional area of 1.6 millimeters by 2.0 millimeters.

11. The method of claim 8 wherein singulating is performed such that the oscillator integrated circuit device is sized to have a cross-sectional area of no less than 1.0 millimeters by 1.5 millimeters.

12. A method of fabricating an oscillator integrated circuit device, the method comprising:
providing a lead frame having an electrical lead with internal and external electrical contact surfaces at respective first and second heights within a cross-sectional profile of the oscillator integrated circuit device, and a die-mounting surface at an intermediate height between the first and second heights;
mounting a control die to the die-mounting surface, such that at least a portion of the control die is disposed between the first and second heights within the cross-sectional profile of the oscillator integrated circuit device;
wire-bonding the control die to the internal electrical contact surface;
mounting a MEMS resonator die in a stacked configuration with the control die;
electrically coupling the MEMS resonator die with the control die; and
encapsulating the MEMS resonator die, at least one surface of the control die, the internal electrical contact surface, and the die-mounting surface within a package enclosure of the oscillator integrated circuit device, in a manner such that the external electrical contact surface is exposed at an external surface oscillator integrated circuit device.

13. A method of fabricating an oscillator integrated circuit device having a control die and a MEMS resonator die, wherein the MEMS resonator die comprises a MEMS resonant structure and where in the control die comprises CMOS circuitry, the method comprising:
affixing the control die to a die-mounting structure;
wire-bonding electrically-conductive leads to the control die;
stacking the MEMS resonator die with the control die, and electrically coupling the MEMS die resonator die with the control die; and
enveloping the MEMS resonator die, the control die and wire-bonding within a package enclosure of the oscillator integrated circuit device, such that electrical contacts coupled to the control die, via the electrically conductive leads, are exposed at an external surface of the oscillator integrated circuit device.

Assignees

• Sitime Corp

Inventors

• Gupta Pavan
• Partridge Aaron
• Lutz Markus

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W74/111

  the semiconductor body being completely enclosed · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10W70/60

  Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) · CPC title