Coreless electronic substrates having embedded inductors
US-2022293327-A1 · Sep 15, 2022 · US
US12354883B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12354883-B2 |
| Application number | US-202117484315-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 24, 2021 |
| Priority date | Sep 24, 2021 |
| Publication date | Jul 8, 2025 |
| Grant date | Jul 8, 2025 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
Various embodiments disclosed relate to methods of making omni-directional semiconductor interconnect bridges. The present disclosure includes semiconductor assemblies including a mold layer having mold material, a first filler material dispersed in the mold material, and a second filler material dispersed in the mold material, wherein the second filler material is heterogeneously dispersed.
Opening claim text (preview).
What is claimed is: 1. A semiconductor interconnect assembly comprising: a mold layer having a first side and a second side, the mold layer comprising a mold material, a first filler material dispersed in the mold material, and a second filler material dispersed in the mold material, wherein the second filler material includes magnetic particles; a die embedded in the mold layer; one or more pillars extending in the mold layer from the first side to the second side; and wherein the second filler material is more densely dispersed within the mold layer along a gradient between the first side and the second side. 2. The assembly of claim 1 , wherein the second filler material comprises nickel, cobalt iron, nickel iron, or combinations thereof. 3. The assembly of claim 1 , wherein the second filler material comprises particles having an average diameter of about less than one micron each. 4. The assembly of claim 1 , wherein the second filler material is heterogeneously dispersed within the mold layer. 5. The assembly of claim 1 , wherein the die comprises an interconnect bridge die. 6. The assembly of claim 5 , wherein the interconnect bridge die comprises one or more through die vias for communication from a top side to a bottom side of the interconnect bridge. 7. The assembly of claim 1 , wherein the pillars comprise power delivery pillars, data transmission pillars, or an inductor. 8. The assembly of claim 1 , wherein the second filler material is densely dispersed within the mold layer adjacent the one or more pillars. 9. The assembly of claim 1 , further comprising one or more vias extending in the mold layer from the first side to the second side, each of the one or more vias filled with the second filler material. 10. The assembly of claim 1 , wherein the one or more pillars comprise the second filler material. 11. The assembly of claim 1 , further comprising one or more low filler areas with a lesser density of the second filler material compared to one or more high filler areas; and one or more vias extending in the mold layer from the first side to the second side, the one or more vias located in the one or more low filler areas. 12. A semiconductor assembly comprising: a layer having a first side and a second side, the layer comprising: a resin material; magnetic particles dispersed in the resin material; and dielectric particles dispersed in the resin material; a bridge die embedded in the layer; one or more pillars extending in the layer from the first side to the second side; and a ferromagnetic layer on the one or more pillars, wherein the magnetic particles are more densely dispersed within the layer adjacent the one or more pillars. 13. The assembly of claim 12 , wherein the one or more pillars each comprise copper pillars. 14. The assembly of claim 12 , wherein the one or more pillars each comprise power delivery pillars. 15. A semiconductor assembly comprising: a mold layer having a first side and a second side, the mold layer comprising a mold material, a first filler material dispersed in the mold material, and a second filler material dispersed in the mold material, wherein the second filler material includes magnetic particles; one or more low filler areas with a lesser density of the second filler material compared to one or more high filler areas; a bridge die embedded in the mold layer; one or more power delivery pillars extending in the mold layer from the first side to the second side; and one or more vias extending in the mold layer from the first side to the second side, the one or more vias located in the one or more low filler areas. 16. The assembly of claim 15 , wherein the second filler material comprises a thermally conductive material. 17. The assembly of claim 16 , wherein the magnetic particles comprise silver, aluminum, graphite, graphene, diamond, or combinations thereof. 18. The assembly of claim 15 , wherein the mold material further comprises a liquid metal, stress absorber material, dielectric material, or combinations thereof.
Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) · CPC title
Fillings including materials for absorbing or reacting with moisture or other undesired substances · CPC title
Solid or gel fillings · CPC title
containing a filler · CPC title
using moulds · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.