Methods for controlling contact resistance in cobalt-titanium structures

Patent metadata

Field	Value
Publication number	US-12347695-B2
Application number	US-202217857381-A
Country	US
Kind code	B2
Filing date	Jul 5, 2022
Priority date	Nov 3, 2018
Publication date	Jul 1, 2025
Grant date	Jul 1, 2025

Abstract

Methods for producing a reduced contact resistance for cobalt-titanium structures. In some embodiments, a method comprises depositing a titanium layer using a chemical vapor deposition (CVD) process, depositing a first cobalt layer on the titanium nitride layer using a physical vapor deposition (PVD) process, and depositing a second cobalt layer on the first cobalt layer using a CVD process.

First claim

The invention claimed is:

1. A method for forming a cobalt-titanium structure with a reduced contact resistance, comprising:
etching an opening into a substrate to form a feature with sidewalls and a bottom in the substrate, wherein the substrate is a silicon material with a layer of a dielectric material on an uppermost surface of the substrate and wherein the sidewalls are formed from the dielectric material and the bottom extends into the substrate and is formed into the silicon material;
depositing a titanium layer onto the feature using a plasma-enhanced chemical vapor deposition (PE-CVD) process in a PE-CVD titanium deposition chamber using titanium-chloride-based gas to form a titanium silicide layer directly on the bottom of the feature and to form a titanium silicon oxide first layer when the dielectric material is a silicon dioxide dielectric material or a titanium silicon nitride first layer when the dielectric material is a silicon nitride dielectric material directly on the sidewalls of the feature;
treating the feature with a nitridation process with a duration of approximately four minutes or less in the PE-CVD titanium deposition chamber to form a titanium silicon nitride second layer on the feature, wherein the titanium silicon nitride second layer prevents formation of silicon nitride on the titanium silicon oxide first layer or the titanium silicon nitride first layer which increases contact resistance and provides a barrier to eliminate formation of TiSi x on the titanium silicon oxide first layer or on the titanium silicon nitride first layer and subsequent intermixing with a first subsequent cobalt deposition layer;
treating the feature with a chlorine reduction process that reduces chlorine impurities caused by use of the titanium-chloride-based gas in depositing the titanium layer and promotes cobalt adhesion of the first subsequent cobalt deposition layer;
treating the feature with a cobalt dewetting reduction process that increases cobalt adhesion of the first subsequent cobalt deposition layer on the sidewalls of the feature;
depositing the first subsequent cobalt deposition layer directly on the bottom of the feature using a directional physical vapor deposition (PVD) process that prevents voids from forming in the bottom of the feature; and
depositing a second subsequent cobalt deposition layer directly on the first subsequent cobalt deposition layer using a CVD process to fill the feature to at least an uppermost surface of the substrate, wherein the feature forms a contact of cobalt and titanium-based material with a reduced contact resistance.

2. The method of claim 1 , further comprising:
reflowing the second subsequent cobalt deposition layer using a high temperature process.

3. The method of claim 1 , wherein the nitridation process is a nitrogen and hydrogen plasma, or an ammonia plasma, or an ammonia gas soak.

4. The method of claim 3 , further comprising:
treating the feature with the nitrogen and hydrogen plasma or the ammonia plasma for a duration of greater than zero to approximately 60 sec or with the ammonia gas soak for a duration of greater than zero to approximately 240 seconds.

5. The method of claim 1 , wherein the chlorine reduction process includes treating the titanium layer with a hydrogen soak process.

6. The method of claim 1 , wherein the cobalt dewetting reduction process includes treating the feature with a silane gas soak.

7. The method of claim 1 , further comprising:
performing a pre-clean process before depositing the titanium layer.

8. A non-transitory, computer readable medium having instructions stored thereon that, when executed, cause a method for forming a cobalt-titanium structure with a reduced contact resistance to be performed, the method comprising:
etching an opening into a substrate to form a feature with sidewalls and a bottom in the substrate, wherein the substrate is a silicon material with a layer of a dielectric material on an uppermost surface of the substrate and wherein the sidewalls are formed from the dielectric material and the bottom extends into the substrate and is formed into the silicon material;
depositing a titanium layer onto the feature using a plasma-enhanced chemical vapor deposition (PE-CVD) process in a PE-CVD titanium deposition chamber using titanium-chloride-based gas to form a titanium silicide layer directly on the bottom of the feature and to form a titanium silicon oxide first layer when the dielectric material is a silicon dioxide dielectric material or a titanium silicon nitride first layer when the dielectric material is a silicon nitride dielectric material directly on the sidewalls of the feature;
treating the feature with a nitridation process with a duration of approximately four minutes or less in the PE-CVD titanium deposition chamber to form a titanium silicon nitride second layer on the feature, wherein the titanium silicon nitride second layer prevents formation of silicon nitride on the titanium silicon oxide first layer or the titanium silicon nitride first layer which increases contact resistance and provides a barrier to eliminate formation of TiSi x on the titanium silicon oxide first layer or on the titanium silicon nitride first layer and subsequent intermixing with a first subsequent cobalt deposition layer;
treating the feature with a chlorine reduction process that reduces chlorine impurities caused by use of the titanium-chloride-based gas in depositing the titanium layer and promotes cobalt adhesion of the first subsequent cobalt deposition layer;
treating the feature with a cobalt dewetting reduction process that increases cobalt adhesion of the first subsequent cobalt deposition layer on the sidewalls of the feature;
depositing the first subsequent cobalt deposition layer directly on the bottom of the feature using a directional physical vapor deposition (PVD) process that prevents voids from forming in the bottom of the feature; and
depositing a second subsequent cobalt deposition layer directly on the first subsequent cobalt deposition layer using a CVD process to fill the feature to at least an uppermost surface of the substrate, wherein the feature forms a contact of cobalt and titanium-based material with a reduced contact resistance.

9. The non-transitory, computer readable medium of claim 8 , further comprising:
reflowing the second subsequent cobalt deposition layer using a high temperature process.

10. The non-transitory, computer readable medium of claim 8 , further comprising:
treating the feature with a silane gas soak as at least part of the cobalt dewetting reduction process; or
performing a pre-clean process before depositing the titanium layer.

11. The non-transitory, computer readable medium of claim 8 , wherein the nitridation process is a nitrogen and hydrogen plasma, or an ammonia plasma, or an ammonia gas soak.

12. The non-transitory, computer readable medium of claim 11 , further comprising:
treating the titanium silicon oxide first layer or the titanium silicon nitride first layer with the nitrogen and hydrogen plasma or the ammonia plasma for a duration of greater than zero to approximately 60 sec or with the ammonia gas soak for a duration of greater than zero to approximately 240 seconds as at least part of the nitridation process.

13. The non-transitory, computer readable medium of claim 8 , wherein the chlorine reduction process includes treating the titanium silicon nitride second layer with a hydrogen soak process.

Assignees

• Applied Materials Inc

Inventors

• KURATOMI Takashi
• Gelatos Avgerinos
• Ha Tae Hong
• Lu Xuesong
• Ho Szuheng
• Lei Wei
• Lee Mark
• Hung Raymond
• Tang Xianmin

Classifications

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P14/69394

  the material containing titanium, e.g. TiO2 · CPC title

• H10P14/6529

  by exposure to a gas or vapour · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/44

  Physical vapour deposition [PVD] · CPC title