Methods and apparatus for tungsten gap fill
US-12577658-B2 · Mar 17, 2026 · US
This page is not indexed by search engines while we improve data quality.
Lei Wei patents
Lei Wei is listed as an inventor on 47 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Lei Wei |
| Total patents | 47 |
| First publication | Jul 23, 2015 |
| Latest publication | Mar 17, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Method of in-situ selective metal removal via gradient oxidation for gapfill
US-12568804-B2 · Mar 3, 2026 · US
Plasma enhanced nucleation layer formation
US-2026015713-A1 · Jan 15, 2026 · US
Flux gradient molybdenum growth process
US-2025336722-A1 · Oct 30, 2025 · US
Self field-suppression CVD tungsten (W) fill on PVD W liner
US-12406884-B2 · Sep 2, 2025 · US
Metal oxide preclean for bottom-up gapfill in MEOL and BEOL
US-12394619-B2 · Aug 19, 2025 · US
One chamber multi-station selective metal removal
US-12374568-B2 · Jul 29, 2025 · US
Gap fill methods using catalyzed deposition
US-12351909-B2 · Jul 8, 2025 · US
Methods for controlling contact resistance in cobalt-titanium structures
US-12347695-B2 · Jul 1, 2025 · US
Methods for forming metal gapfill with low resistivity
US-12272659-B2 · Apr 8, 2025 · US
Recent patents
Latest publications not already listed above.
One chamber multi-station selective metal removal
US-2025079199-A1 · Mar 6, 2025 · US
Methods for shaping magnetic fields during semiconductor processing
US-12203163-B2 · Jan 21, 2025 · US
Low resistivity tungsten film and method of manufacture
US-12191198-B2 · Jan 7, 2025 · US
Bottom etch process for contact plug anchoring
US-2025006518-A1 · Jan 2, 2025 · US
Metal oxide preclean for bottom-up gapfill in meol and beol
US-2024420947-A1 · Dec 19, 2024 · US
Method for Metal Gapfill
US-2024395614-A1 · Nov 28, 2024 · US
Interruption layer fill for low resistance contacts
US-2024371771-A1 · Nov 7, 2024 · US
Hybrid molybdenum fill scheme for low resistivity semiconductor applications
US-2024355673-A1 · Oct 24, 2024 · US
Top magnets for decreased non-uniformity in PVD
US-12112890-B2 · Oct 8, 2024 · US
Interlayer for Resistivity Reduction in Metal Deposition Applications
US-2024194527-A1 · Jun 13, 2024 · US
Buffer Layer for Dielectric Protection in Physical Vapor Deposition Metal Liner Applications
US-2024145300-A1 · May 2, 2024 · US
Methods for forming metal gapfill with low resistivity
US-2024088071-A1 · Mar 14, 2024 · US
Integrated pvd tungsten liner and seamless cvd tungsten fill
US-2024087955-A1 · Mar 14, 2024 · US
Nitrogen plasma treatment for bottom-up growth
US-2024014072-A1 · Jan 11, 2024 · US
Treatment of tungsten surface for tungsten gap-fill
US-2023420295-A1 · Dec 28, 2023 · US
Gradient oxidation and etch for pvd metal as bottom liner in bottom up gap fill
US-2023343643-A1 · Oct 26, 2023 · US
Method of in-situ selective metal removal via gradient oxidation for gapfill
US-2023343644-A1 · Oct 26, 2023 · US
Self field-suppression cvd tungsten (w) fill on pvd w liner
US-2023326791-A1 · Oct 12, 2023 · US
Methods and apparatus for tungsten gap fill
US-2023134230-A1 · May 4, 2023 · US
Top magnets for decreased non-uniformity in pvd
US-2023088552-A1 · Mar 23, 2023 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Applied Materials Inc | 45 |
| Lam Res Corp | 1 |
| Toyota Res Inst Inc | 1 |
| Toyota Motor Co Ltd | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10W20/056 | 23 |
| H10W20/045 | 22 |
| H10P14/44 | 20 |
| H10W20/425 | 20 |
| H10W20/033 | 18 |