Pressure control system for a multi-head processing chamber of a plasma processing apparatus

Patent metadata

Field	Value
Publication number	US-12347661-B2
Application number	US-202117412969-A
Country	US
Kind code	B2
Filing date	Aug 26, 2021
Priority date	Jul 16, 2021
Publication date	Jul 1, 2025
Grant date	Jul 1, 2025

Abstract

A pressure control system is provided. The pressure control system includes a member at least partially positioned within a pumping port fluidly coupled between a multi-head processing chamber and a pump configured to evacuate gases from the multi-head processing chamber. The member is rotatable relative to the pumping port. The pressure control system includes a plurality of pressure sensors. Each of the pressure sensors is configured to obtain data indicative of a pressure of a flow of gas entering the multi-head processing chamber at a corresponding head of the multi-head processing chamber. The pressure control system includes an actuator configured to rotate the member to control a pressure of a flow of gas at a first processing head of the multi-head processing chamber.

First claim

What is claimed is:

1. A pressure control system comprising:
a member at least partially positioned within a pumping port fluidly coupled between a multi-head processing chamber and a pump configured to evacuate gases from the multi-head processing chamber, the member rotatable relative to the pumping port, the member includes a shaft having a first end extending into a first projection of the pumping port and a second end extending through a second projection of the pumping port;
a plurality of pressure sensors, each of the pressure sensors configured to obtain data indicative of a pressure of a flow of gas entering the multi-head processing chamber at a corresponding head of the multi-head processing chamber; and
an actuator configured to rotate the member to control a pressure of a flow of gas at a first head of the multi-head processing chamber, the actuator positioned proximate to the second end of the shaft, the actuator comprising a first magnetic coupler, a cap, and a second magnetic coupler.

2. The pressure control system of claim 1 , wherein the actuator is configured to rotate the member in a first direction or a second direction to control the pressure of the flow of gas at the first processing head of the multi-head processing chamber.

3. The pressure control system of claim 1 , wherein each of the pressure sensors comprises a manometer.

4. The pressure control system of claim 1 , wherein the actuator is configured to rotate the member to control a pressure differential between the pressure of the flow of gas at the first head of the multi-head processing chamber and a pressure of a flow of gas at a second head of the multi-head processing chamber.

5. The pressure control system of claim 4 , wherein the actuator is configured to rotate the member in a first direction or a second direction to reduce the pressure differential from a first value to a second value, the second value being greater than zero.

6. The pressure control system of claim 4 , wherein the actuator is configured to rotate the member in a first direction or a second direction to increase the pressure differential from a first value to a second value.

7. The pressure control system of claim 1 , wherein the first magnetic coupler positioned within the second projection, the second magnetic coupler surrounding an exterior surface of the second projection.

8. The pressure control system of claim 7 , wherein the first magnetic coupler and the second magnetic coupler each comprise a magnetic shield and a plurality of magnets, each of the magnets positioned within a corresponding recess of a plurality of recesses defined by the magnetic shield.

9. A plasma processing apparatus comprising:
a multi-head processing chamber;
a pumping port fluidly coupled to the multi-head processing chamber;
a pump fluidly coupled to the multi-head processing chamber via the pumping port, the pump configured to evacuate gas from the multi-head processing chamber via the pumping port; and
a pressure control system comprising:
a member at least partially positioned within the pumping port, the member rotatable relative to the pumping port, the member includes a shaft having a first extending into a first projection of the pumping port and a second end extending through a second projection of the pumping port;
a plurality of pressure sensors, each of the pressure sensors configured to obtain data indicative of a pressure of a flow of gas entering the multi-head processing chamber via a corresponding head of the multi-head processing chamber; and
an actuator configured to rotate the member to control a pressure of a flow of gas at a first head of the multi-head processing chamber, the actuator positioned proximate to the second end of the shaft, the actuator comprising a first magnetic coupler, a cap, and a second magnetic coupler.

10. The plasma processing apparatus of claim 9 , wherein the actuator is configured to rotate the member to control a pressure differential between the pressure of the flow of gas at the first head and a pressure of a flow of gas at a second head of the multi-head processing chamber.

11. The plasma processing apparatus of claim 9 , wherein the pump comprises a turbomolecular pump.

12. The plasma processing apparatus of claim 9 , wherein the member comprises a flap.

13. The plasma processing apparatus of claim 12 , wherein the flap has a range of motion of about 180 degrees.

Assignees

• Beijing E Town Semiconductor Tech Co Ltd
• Mattson Tech Inc

Inventors

• Long Maolin
• Guan Changle
• Li Junliang

Classifications

• H01J37/32449 Primary

  Gas control, e.g. control of the gas flow · CPC title

• H01J37/32816 Primary

  Pressure · CPC title

• H01J37/32431 Primary

  Constructional details of the reactor · CPC title