Plasma strip tool with uniformity control

Patent metadata

Field	Value
Publication number	US-11201036-B2
Application number	US-201815888257-A
Country	US
Kind code	B2
Filing date	Feb 5, 2018
Priority date	Jun 9, 2017
Publication date	Dec 14, 2021
Grant date	Dec 14, 2021

Abstract

Plasma strip tools with process uniformity control are provided. In one example implementation, a plasma processing apparatus includes a processing chamber, a first pedestal in the processing chamber operable to support a workpiece, and a second pedestal in the processing chamber operable to support another workpiece. The first pedestal can define a first processing station. The second pedestal can define a second processing station. The apparatus can further include a first plasma chamber disposed above the first processing station and a second plasma chamber disposed above the second processing station. The first plasma chamber can be associated with a first inductive plasma source. The first plasma chamber can be separated from the processing chamber by a first separation grid. The second plasma chamber can be associated with a second inductive plasma source. The second plasma chamber can be separated from the processing chamber by a second separation grid.

First claim

What is claimed is:

1. A plasma processing apparatus, comprising:
a processing chamber;
a first pedestal in the processing chamber operable to support a workpiece, the first pedestal defining a first processing station;
a second pedestal in the processing chamber operable to support a workpiece, the second pedestal defining a second processing station;
a wall disposed within the processing chamber such that the first pedestal is separated from the second pedestal via the wall;
a first plasma chamber disposed above the first processing station, the first plasma chamber associated with a first inductive plasma source, the first plasma chamber separated from the processing chamber by a first separation grid;
a second plasma chamber disposed above the second processing station, the second plasma chamber associated with a second inductive plasma source, the second plasma chamber separated from the processing chamber by a second separation grid;
a temperature regulation system disposed within the wall; and
a top plate disposed above the first plasma chamber and the second plasma chamber, the top plate comprising a symmetric temperature regulation system comprising a cooling channel having a common channel, the common channel comprising a first end and a second end, the first end of the common channel having an inlet portion, the cooling channel comprising a first branch extending from the second end of the common channel around the first plasma chamber and a second branch extending from the second end of the common channel around the second plasma chamber, the cooling channel having an inlet for the inlet portion of the common channel, the inlet being positioned between the first plasma chamber and the second plasma chamber when the top plate is positioned on the plasma strip tool processing apparatus.

2. The plasma processing apparatus of claim 1 , wherein the temperature regulation system comprises one or more heating elements.

3. The plasma processing apparatus of claim 1 , wherein the temperature regulation system comprises one or more cooling channels.

4. The plasma processing apparatus of claim 1 , further comprising:
a pressure equalizing baffle connected to the first pedestal and the second pedestal, the pressure equalizing baffle operable to maintain pressure between the first processing station and the second processing station.

5. The plasma processing apparatus of claim 1 , further comprising:
a first concentric pump port located beneath the first pedestal; and
a second concentric pump port located beneath the second pedestal.

6. The plasma processing apparatus of claim 5 , further comprising:
a common pump coupled to the first concentric pump port and the second concentric pump port.

7. The plasma processing apparatus of claim 1 , wherein at least one of the first pedestal or the second pedestal comprise a plurality of independent temperature regulation zones.

8. The plasma processing apparatus of claim 7 , wherein each of the plurality of independent temperature regulation zones comprise one or more heating elements.

9. The plasma processing apparatus of claim 7 , wherein each of the plurality of independent temperature regulation zones comprise one or more cooling channels.

10. The plasma processing apparatus of claim 7 , wherein the plurality of independent temperature regulation zones are spaced apart from one another along a circumferential direction.

11. The plasma processing apparatus of claim 1 , wherein at least one of the first pedestal or the second pedestal are movable in a vertical direction to adjust a vertical position of a workpiece.

12. The plasma processing apparatus of claim 1 , wherein at least one of the first pedestal or the second pedestal comprise one or more lift pins operable to adjust a vertical position of a workpiece.

13. A top plate for a plasma strip tool comprising a first plasma chamber and a second plasma chamber, the top plate comprising:
a central portion disposed between a first portion of the top plate and a second portion of the top plate; and
a symmetric temperature regulation system, the symmetric temperature regulation system comprising a cooling channel having a common channel, the common channel comprising a first end and a second end, the first end of the common channel having an inlet portion, the cooling channel comprising a first branch extending from the second end of the common channel around the first plasma chamber and a second branch extending from the second end of the common channel around the second plasma chamber, the cooling channel having an inlet for the inlet portion of the common channel, the inlet being positioned in the central portion of the top plate, the cooling channel having a first outlet for the first branch and a second outlet for the second branch positioned between the first portion of the top plate and the second portion of the top plate, the first portion of the top plate being partially looped by the first branch and the second portion of the top plate being partially looped by the second branch.

Assignees

• Mattson Tech Inc
• Beijing E Town Semiconductor Tech Co Ltd

Inventors

• Ma Shawming
• Nagorny Vladimir
• Desai Dixit V
• Pakulski Ryan

Classifications

• H10P72/0462

  characterised by the construction of the processing chambers, e.g. modular processing chambers · CPC title

• H10P72/0421

  for drying etching · CPC title

• H01J37/32816

  Pressure · CPC title

• H01J37/32834

  Exhausting · CPC title

• H01J37/32724 Primary

  Temperature · CPC title