Method and apparatus for removing particles or photoresist on substrates

Patent metadata

Field	Value
Publication number	US-12334367-B2
Application number	US-202017920665-A
Country	US
Kind code	B2
Filing date	Apr 21, 2020
Priority date	Apr 21, 2020
Publication date	Jun 17, 2025
Grant date	Jun 17, 2025

Abstract

Methods and an apparatus for removing particles or photoresist on substrates. In an embodiment, a method comprises the following steps: transferring one or more substrates into a DIO 3 solution accommodated in a DIO 3 bath; after the one or more substrates are processed in the DIO 3 bath, taking the one or more substrates out from the DIO 3 bath and transferring the one or more substrates into a SPM solution accommodated in a SPM bath; after the one or more substrates are processed in the SPM bath, taking the one or more substrates out from the SPM bath and rinsing the one or more substrates; and transferring the one or more substrates to one or more single chambers to perform single substrate cleaning and drying process. The method combines DIO 3 and SPM in one cleaning sequence, which can remove particles or photoresist, especially remove photoresist treated by medium dose or high dose of ion implantation.

First claim

What is claimed is:

1. A method for removing particles or photoresist on substrates, comprising:
transferring one or more substrates into a DIO 3 solution accommodated in a DIO 3 bath;
after the one or more substrates are processed in the DIO 3 bath, taking the one or more substrates out from the DIO 3 bath and transferring the one or more substrates into a SPM solution accommodated in a SPM bath;
after the one or more substrates are processed in the SPM bath, taking the one or more substrates out from the SPM bath and rinsing the one or more substrates;
transferring the one or more substrates to one or more single chambers to perform single substrate cleaning and drying process;
wherein before the one or more substrates are transferred to the DIO 3 bath, the liquid in the DIO 3 bath is DIW, and further comprising:
opening a shutter of the DIO 3 bath, transferring the one or more substrates into the DIW in the DIO 3 bath, closing the shutter of the DIO 3 bath;
overflowing an DIO 3 solution from a bottom of the DIO 3 bath to replace the DIW in the DIO 3 bath, wherein ozone concentration of the DIO 3 solution is 30 ppm to 120 ppm;
after the DIO 3 bath is full of the DIO 3 solution, keeping the DIO 3 solution overflowing for 5 to 15 min;
quick dump drain the DIO 3 solution;
filling the DIO 3 bath with pure DIW; and
opening the shutter of the DIO 3 bath, taking the one or more substrates out from the DIO 3 bath.

2. The method as claimed in claim 1 , further comprising:
transferring the one or more substrates into a HF formulation solution accommodated in a HF formulation bath before the one or more substrates are transferred to the DIO 3 bath.

3. The method as claimed in claim 2 , wherein the HF formulation solution is a mixture of HF and DIW, and HF and DIW mix ratio is 100:1 to 1000:1.

4. The method as claimed in claim 2 , wherein the HF formulation solution is a BOE mixture, HF weight percentage of the BOE mixture is 0.05% to 10%, NH 4 F weight percentage of the BOE mixture is 10% to 40%.

5. The method as claimed in claim 1 , wherein the DIO 3 flow rate supplied to the DIO 3 bath is 10 LPM to 30 LPM.

6. The method as claimed in claim 1 , wherein the SPM solution is a mixture of H 2 SO 4 and H 2 O 2 , and H 2 SO 4 and H 2 O 2 mix ratio is 3:1 to 50:1, the temperature of the mixture is 80° C. to 150° C.

7. The method as claimed in claim 1 , wherein the step of rinsing the one or more substrates comprises QDR (Quick dump drain) and overflow rinse.

8. The method as claimed in claim 1 , further comprising after the one or more substrates are taken out from the SPM bath, keeping the one or more substrates being in wet state before the one or more substrates are transferred to the one or more single chambers.

9. The method as claimed in claim 1 , wherein the process in the one or more single chambers comprises:
at least one HF formulation surface etching process, at least one DIO 3 oxidizing process, at least one SC1 particle removal process, at least one DIW rinsing process and at least one drying process.

10. The method as claimed in claim 9 , wherein after the SC1 particle removal process, further comprises at least one SC2 metal removal process.

11. The method as claimed in claim 1 , wherein the process in the one or more single chambers comprises:
at least one DIO 3 oxidizing process, at least one SC1 particle removal process, at least one DIW rinsing process and at least one drying process.

12. The method as claimed in claim 11 , wherein after the SC1 particle removal process, further comprises at least one SC2 metal removal process.

13. The method as claimed in claim 1 , wherein the process in the one or more single chambers comprises:
at least one HF formulation surface etching process, at least one DIO 3 oxidizing process, at least one DIW rinsing process and at least one drying process.

14. The method as claimed in claim 13 , wherein after the DIO 3 oxidizing process, further comprises at least one SC2 metal removal process.

15. The method as claimed in claim 1 , wherein the process in the one or more single chambers comprises:
at least one SC1 particle removal process, at least one DIW rinsing process and at least one drying process.

16. The method as claimed in claim 15 , wherein after the SC1 particle removal process, further comprises at least one SC2 metal removal process.

17. A method for removing particles or photoresist on substrates, comprising:
transferring one or more substrates into a SPM solution accommodated in a SPM bath;
after the one or more substrates are processed in the SPM bath, taking the one or more substrates out from the SPM bath and rinsing the one or more substrates; and
transferring the one or more substrates to one or more single chambers to perform single substrate cleaning and drying process, wherein the single substrate cleaning and drying process comprises at least one DIO 3 oxidizing process;
wherein the at least one DIO 3 oxidizing process comprising:
opening a shutter of a DIO 3 bath, transferring the one or more substrates into a DIW in a DIO 3 bath, closing a shutter of the DIO 3 bath;
overflowing a DIO 3 solution from a bottom of the DIO 3 bath to replace the DIW in the DIO 3 bath, wherein ozone concentration of the DIO 3 solution is 30 ppm to 120 ppm;
after the DIO 3 bath is full of the DIO 3 solution, keeping the DIO 3 solution overflowing for 5 to 15 min;
quick dump drain the DIO 3 solution;
filling the DIO 3 bath with pure DIW; and
opening the shutter of the DIO 3 bath, taking the one or more substrates out from the DIO 3 bath.

18. The method as claimed in claim 17 , further comprising:
transferring the one or more substrates into a HF formulation solution accommodated in a HF formulation bath, taking the one or more substrates out from the HF formulation bath and rinsing the one or more substrates before the one or more substrates are transferred to the SPM bath.

19. The method as claimed in claim 18 , wherein the HF formulation solution is a mixture of HF and DIW, and HF and DIW mix ratio is 100:1 to 1000:1.

20. The method as claimed in claim 18 , wherein the HF formulation solution is a BOE mixture, HF weight percentage of the BOE mixture is 0.05% to 10%, NH 4 F weight percentage of the BOE mixture is 10% to 40%.

21. The method as claimed in claim 17 , wherein the SPM solution is a mixture of H 2 SO 4 and H 2 O 2 , and H 2 SO 4 and H 2 O 2 mix ratio is 3:1 to 50:1, the temperature of the mixture is 80° C. to 150° C.

22. The method as claimed in claim 17 , wherein the step of rinsing the one or more substrates comprises QDR (Quick dump drain) and overflow rinse.

23. The method as claimed in claim 17 , further comprising after the one or more substrates are taken out from the SPM bath, keeping the one or more substrates being in wet state before the one or more substrates are transferred to the one or more single chambers.

24. The method as claimed in claim 17 , wherein the process in the one or more single chambers further comprises:
at least one HF formulation surface etching process before the DIO 3 oxidizing process, at least one SC1 particle removal process, at least one DIW rinsing process and at least one drying process.

25. The method as claimed in claim 24 , wherein after the SC1 particle removal process, further comprises at least one SC2 metal removal process.

Assignees

• Acm Research Shanghai Inc

Inventors

• Zhang Xiaoyan
• Wang Wenjun
• Chen Fuping
• Wang Jun
• Jia Shena
• Wang Deyun
• Wang Hui
• Xia Guangyu
• Wang He

Classifications

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P72/0426

  with the semiconductor substrates being dipped in baths or vessels · CPC title

• H10P72/0411 Primary

  for wet cleaning or washing · CPC title

• H10P72/3302

  Mechanical parts of transfer devices · CPC title

• H10P72/0462

  characterised by the construction of the processing chambers, e.g. modular processing chambers · CPC title