Bonding wire for semiconductor device
US-2017200690-A1 · Jul 13, 2017 · US
Copper alloy bonding wire for semiconductor devices
US12300658B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12300658-B2 |
| Application number | US-202217942838-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 12, 2022 |
| Priority date | Jun 20, 2016 |
| Publication date | May 13, 2025 |
| Grant date | May 13, 2025 |
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- Title
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Abstract
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In a copper alloy bonding wire for semiconductor devices, the bonding longevity of a ball bonded part under high-temperature and high-humidity environments is improved. The copper alloy bonding wire for semiconductor devices includes in total 0.03% by mass or more to 3% by mass or less of at least one or more kinds of elements selected from Ni, Zn, Ga, Ge, Rh, In, Ir, and Pt (first element), with the balance Cu and inevitable impurities. The inclusion of a predetermined amount of the first element suppresses production of an intermetallic compound susceptible to corrosion under high-temperature and high-humidity environments at the wire bonding interface and improves the bonding longevity of a ball bonded part.
First claim
Opening claim text (preview).
The invention claimed is: 1. A copper alloy bonding wire for semiconductor devices, consisting of: one or more kinds of first elements selected from Ga, In, and Ir, wherein the total content of the first elements is 0.05% by mass or more and 3% by mass or less; and 0.0005% by mass or more and 0.5% by mass or less of at least one or more kinds of third elements selected from Ag and Au, with respect to the entire wire, with the balance consisting of Cu and inevitable impurities, wherein a total content of the first elements and the third elements is more than 0.1% by mass, wherein the copper alloy bonding wire does not have a coating layer based on a metal other than copper, and wherein an average crystal grain size (μm) in core cross section in a direction perpendicular to a wire axis of the copper alloy bonding wire is 0.02 ×R+ 0.4 or more (1a) 0.1 ×R+ 0.5 or less (1b) where R (μm) is a diameter of the wire. 2. The copper alloy bonding wire for semiconductor devices according to claim 1 , wherein the third elements comprise Ag. 3. The copper alloy bonding wire for semiconductor devices according to claim 1 , wherein the one or more kinds of first elements is selected from Ga and Ir.
Assignees
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Classifications
comprising copper [Cu] · CPC title
comprising gold [Au] · CPC title
comprising metals or metalloids, e.g. silver · CPC title
not comprising solid metals or solid metalloids, e.g. polymers, ceramics or liquids · CPC title
of outermost layers of multilayered bond wires, e.g. material of a coating · CPC title
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- What does patent US12300658B2 cover?
- In a copper alloy bonding wire for semiconductor devices, the bonding longevity of a ball bonded part under high-temperature and high-humidity environments is improved. The copper alloy bonding wire for semiconductor devices includes in total 0.03% by mass or more to 3% by mass or less of at least one or more kinds of elements selected from Ni, Zn, Ga, Ge, Rh, In, Ir, and Pt (first element), wi…
- Who is the assignee on this patent?
- Nippon Micrometal Corp, Nippon Steel Chemical & Mat Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification B23K35/0227. Mapped technology areas include Operations & Transport.
- When was this patent published?
- Publication date Tue May 13 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 7 related publications on this page (citations in our corpus or others sharing the same primary CPC).