Copper alloy bonding wire for semiconductor

Patent metadata

Field	Value
Publication number	US-9427830-B2
Application number	US-201013380123-A
Country	US
Kind code	B2
Filing date	Jun 23, 2010
Priority date	Jun 24, 2009
Publication date	Aug 30, 2016
Grant date	Aug 30, 2016

Abstract

The present invention is a copper-based bonding wire for use in a semiconductor element. The bonding wire of the present invention can be manufactured with an inexpensive material cost, and has a superior PCT reliability in a high-humidity/temperature environment. Further, the bonding wire of the present invention exhibits: a favorable TCT reliability through a thermal cycle test; a favorable press-bonded ball shape; a favorable wedge bondability; a favorable loop formability, and so on. Specifically, the bonding wire of the present invention is a copper alloy bonding wire for semiconductor manufactured by drawing a copper alloy containing 0.13 to 1.15% by mass of Pd and a remainder comprised of copper and unavoidable impurities.

First claim

The invention claimed is:

1. A copper alloy bonding wire for semiconductor manufactured by wire drawing of a copper alloy, the copper alloy consisting of 0.13 to 1.15% by mass of Pd, and a remainder consisting of copper,
wherein a copper oxide formed on a surface of the copper alloy bonding wire has an average film thickness of 0.0005 to 0.02 μm.

2. The copper alloy bonding wire for semiconductor according to claim 1 , comprising:
crystal grains not smaller than 2 μm and not larger than a wire diameter multiplied by 1.5 on average, said crystal grains being observed on a wire cross-section surface parallel to a wire longitudinal direction.

3. A copper alloy bonding wire for semiconductor manufactured by wire drawing of a copper alloy, the copper alloy consisting of 0.13 to 1.15% by mass of Pd, at least one of Ag and Au in a total amount of 0.0005 to 0.07% by mass, and a remainder consisting of copper,
wherein a copper oxide formed on a surface of the copper alloy bonding wire has an average film thickness of 0.0005 to 0.02 μm.

4. A copper alloy bonding wire for semiconductor manufactured by wire drawing of a copper alloy, the copper alloy consisting of more than 0.5% and not more than 1.15% by mass of Pd, at least one of Ti: 0.0005 to 0.01% by mass and B: 0.0005 to 0.007% by mass, and a remainder consisting of copper,
wherein a copper oxide formed on a surface of the copper alloy bonding wire has an average film thickness of 0.0005 to 0.02 μm.

5. A copper alloy bonding wire for semiconductor manufactured by wire drawing of a copper alloy, the copper alloy consisting of more than 0.5% and not more than 1.15% by mass of Pd, at least one of Ag and Au in a total amount of 0.0005 to 0.07% by mass, at least one of Ti: 0.0005 to 0.01% by mass and B: 0.0005 to 0.007% by mass, and a remainder consisting essentially of copper,
wherein a copper oxide formed on a surface of the copper alloy bonding wire has an average film thickness of 0.0005 to 0.02 μm.

6. The copper alloy bonding wire for semiconductor according to claim 3 , comprising crystal grains not smaller than 2 μm and not larger than a wire diameter multiplied by 1.5 on average, said crystal grains being observed on a wire cross-section surface parallel to a wire longitudinal direction.

7. The copper alloy bonding wire for semiconductor according to claim 4 , comprising: crystal grains not smaller than 2 μm and not larger than a wire diameter multiplied by 1.5 on average, said crystal grains being observed on a wire cross-section surface parallel to a wire longitudinal direction.

8. The copper alloy bonding wire for semiconductor according to claim 5 , comprising: crystal grains not smaller than 2 μm and not larger than a wire diameter multiplied by 1.5 on average, said crystal grains being observed on a wire cross-section surface parallel to a wire longitudinal direction.

Assignees

• Uno Tomohiro
• Terashima Shinichi
• Yamada Takashi
• Oda Daizo
• Nippon Steel & Sumikin Mat Co
• Nippon Micrometal Corp

Inventors

• Uno Tomohiro
• Terashima Shinichi
• Yamada Takashi
• Oda Daizo

Classifications

• H10W72/522

  Multilayered bond wires, e.g. having a coating concentric around a core · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W72/5363

  the connected ends being wedge-shaped · CPC title

• H10W72/536

  the connected ends being ball-shaped · CPC title