Self-aware and correcting heterogenous platform incorporating integrated semiconductor processing modules and method for using same
US-2020081423-A1 · Mar 12, 2020 · US
US12281390B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12281390-B2 |
| Application number | US-201917415887-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 16, 2019 |
| Priority date | Dec 28, 2018 |
| Publication date | Apr 22, 2025 |
| Grant date | Apr 22, 2025 |
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A substrate liquid processing apparatus configured to supply a plating liquid to a substrate includes a substrate holder configured to hold the substrate; a plating liquid sending device configured to send the plating liquid to a first flow path; a temperature controller connected to the plating liquid sending device via the first flow path and configured to control a temperature of a fluid supplied through the first flow path; a fluid sending device configured to send a fluid different from the plating liquid to the first flow path; and a discharge device connected to the temperature controller and configured to discharge a fluid supplied from the temperature controller.
Opening claim text (preview).
We claim: 1. A substrate liquid processing apparatus configured to supply a plating liquid to a substrate, comprising: a substrate holder configured to hold the substrate; a plating liquid sending device configured to send the plating liquid to a first flow path; a temperature controller connected to the plating liquid sending device via the first flow path and configured to control a temperature of a fluid supplied through the first flow path to a predetermined temperature for plating from a temperature that is not the predetermined temperature for plating; a pushing fluid sending device configured to send a pushing fluid different from the plating liquid stored in the temperature controller to the first flow path, wherein the first flow path is disposed between the plating liquid sending device and the temperature controller; a discharge device connected to the temperature controller and configured to discharge a fluid, including the plating liquid or the pushing fluid, supplied from the temperature controller; and a controller configured to control the plating liquid sending device and the pushing fluid sending device such that a timing of sending the plating liquid from the plating liquid sending device to the first flow path to store the plating liquid in the temperature controller is different from a timing of sending the pushing fluid from the pushing fluid sending device to the first flow path to push the plating liquid stored in the temperature controller by the pushing fluid, the controller is further configured to control the plating liquid sending device and the pushing fluid sending device to execute: a) supplying the plating liquid from the plating liquid sending device to the temperature controller through the first flow path; and b) after a), after the plating liquid has been heated to the predetermined temperature for plating in the temperature controller, pushing the plating liquid in the temperature controller by a sending of the pushing fluid from the pushing fluid sending device to the first flow path, wherein the substrate includes multiple substrates, and a) and b) are repeated for every one of the multiple substrates. 2. The substrate liquid processing apparatus of claim 1 , wherein the discharge device discharges the plating liquid sent from the temperature controller as the pushing fluid is sent from the pushing fluid sending device to the first flow path. 3. The substrate liquid processing apparatus of claim 1 , wherein the discharge device has an opening through which the fluid is discharged, the discharge device is configured to be moved to be located at a discharge position where the opening faces the substrate held by the substrate holder and a retreat position where the opening does not face the substrate held by the substrate holder, and the discharge device discharges the pushing fluid at the retreat position. 4. The substrate liquid processing apparatus of claim 1 , wherein the substrate holder includes multiple substrate holders, and the multiple substrates are held by the multiple substrate holders, respectively. 5. The substrate liquid processing apparatus of claim 1 , wherein the pushing fluid includes a pushing liquid. 6. The substrate liquid processing apparatus of claim 5 , wherein the pushing fluid includes a pushing gas, and the pushing fluid sending device includes a pushing liquid supply configured to send the pushing liquid to the first flow path and a pushing gas supply configured to send the pushing gas to the first flow path. 7. The substrate liquid processing apparatus of claim 6 , wherein the pushing gas is supplied into the temperature controller through the first flow path after the plating liquid is supplied into the temperature controller through the first flow path, and the pushing liquid is supplied into the temperature controller through the first flow path after the pushing gas is supplied into the temperature controller through the first flow path. 8. The substrate liquid processing apparatus of claim 1 , further comprising: a second flow path configured to connect the temperature controller to the discharge device; and a drain flow path connected to the second flow path and configured to drain a fluid including the plating liquid or the pushing fluid inside the second flow path.
Control of temperature, e.g. temperature of bath, substrate · CPC title
Agitation, e.g. air introduction · CPC title
semiconductor (semiconductor H10P14/48) · CPC title
Coating with alloys · CPC title
using reducing agents · CPC title
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