Apparatus and method for producing gallium oxide crystal

Patent metadata

Field	Value
Publication number	US-10570528-B2
Application number	US-201715470547-A
Country	US
Kind code	B2
Filing date	Mar 27, 2017
Priority date	Apr 21, 2016
Publication date	Feb 25, 2020
Grant date	Feb 25, 2020

Abstract

The apparatus for producing a gallium oxide crystal relating to the invention contains a vertical Bridgman furnace containing: a base body; a cylindrical furnace body having heat resistance disposed above the base body; a lid member occluding the furnace body; a heater disposed inside the furnace body; a crucible shaft provided vertically movably through the base body; and a crucible disposed on the crucible shaft, heated with the heater, the crucible is a crucible containing a Pt-based alloy, the furnace body has an inner wall that is formed as a heat-resistant wall containing plural ring shaped heat-resistant members each having a prescribed height accumulated on each other, and the ring shaped heat-resistant members each contain plural divided pieces that are joined to each other to the ring shape.

First claim

What is claimed is:

1. An apparatus for producing a gallium oxide crystal, comprising a vertical Bridgman furnace containing: a base body; a cylindrical furnace body having heat resistance disposed above the base body; a lid member occluding the furnace body; a heater disposed inside the furnace body; a crucible shaft provided vertically movably through the base body; and a crucible disposed on the crucible shaft, heated with the heater,
the crucible being a Pt—Rh-based alloy crucible having a Rh content of from 10 to 30 wt % and the crucible having heat resistance withstanding a high temperature from 1800° C. to 1900° C.,
the vertical Bridgman furnace being a high temperature furnace heatable at from 1800° C. to 1850° C. under an oxygen atmosphere, the furnace body having an inner wall that is formed as a heat-resistant inner wall containing plural ring shaped heat-resistant members each having a prescribed height accumulated on each other, the ring shaped heat-resistant members each containing plural divided pieces that are joined to each other to a ring shape, and
wherein the lid member contains a plurality of boards accumulated, each of which is formed of aggregated alumina fibers and a reinforcing member formed of a sapphire tube being inserted into the accumulated boards.

2. The apparatus for producing a gallium oxide crystal according to claim 1 , wherein the heat-resistant inner wall contains zirconia.

3. The apparatus for producing a gallium oxide crystal according to claim 1 , wherein the heater is a resistance heater containing MoSi 2 as a major material.

4. The apparatus for producing a gallium oxide crystal according to claim 1 , wherein the heater is a high-frequency induction heater.

5. The apparatus for producing a gallium oxide crystal according to claim 4 , wherein the high-frequency induction heater contains a Pt—Rh-based alloy.

6. The apparatus for producing a gallium oxide crystal according to claim 1 , wherein the furnace body contains a supporting cylinder member formed of a heat-resistant material and disposed outside the heat-resistant inner wall, and a thermal insulator disposed between the heat-resistant inner wall and the supporting cylinder member, and the lid member is supported by the supporting cylinder member.

Assignees

• Univ Shinshu
• Fujikoshi Machinery Corp

Inventors

• Hoshikawa Keigo
• Kobayashi Takumi
• Ohba Etsuko
• Yanagisawa Jun

Classifications

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/263

  using melted materials · CPC title

• C30B11/002 Primary

  Crucibles or containers for supporting the melt · CPC title

• C30B11/003

  Heating or cooling of the melt or the crystallised material · CPC title

• C30B29/16 Primary

  Oxides · CPC title