Method of forming an epitaxial semiconductor layer in a recess and a semiconductor device having the same
US-9209020-B2 · Dec 8, 2015 · US
US10570531B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10570531-B2 |
| Application number | US-201515517165-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 9, 2015 |
| Priority date | Oct 9, 2014 |
| Publication date | Feb 25, 2020 |
| Grant date | Feb 25, 2020 |
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A TiAl intermetallic compound single crystal material and a preparation method therefor are disclosed. The alloy composition of the material comprises TiaAlbNbc(C, Si)d, wherein 43≤b≤49, 2≤c≤10, a+b+c=100, and 0≤d≤1 (at. %).
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What is claimed is: 1. A method for preparing a TiAl intermetallic compound single crystal material, the material comprising, based on atomic percent, an alloy composition of formula: Ti a Al b Nb c (C, Si) d , wherein 43≤b≤49, 2≤c≤10, a+b+c+d=100, and 0≤d≤1, the method comprising the steps of: (1) mixing pure raw materials with a purity of 99.9% or higher of each substance, in proportions according to the formula of the alloy composition, and melting the materials into master alloy ingots in a cold crucible electromagnetic induction levitation melting furnace at a vacuum level of 10 −3 Pa or lower, followed by a gravity casting process or a suction casting process, to obtain master alloy rods; (2) cutting the master alloy rods into upper rods and lower rods which are used as raw material rods and seed crystal rods respectively in an optical floating zone directional solidification furnace; controlling the distance between the upper raw material rods and the lower seed crystal rods to 1-5 mm; arranging the raw material rods and the seed crystal rods coaxially and to be perpendicular to the horizontal plane, feeding an inert gas for protection during directional solidification, rotating the upper and lower rods in opposite directions at a relative rotational speed of 10-40 rpm, starting heating to melt the opposite ends of the upper and lower rods, adjusting the positions of the upper and lower rods to allow the opposite ends to gradually approach and be joined to each other, adjusting the heating to maintain a temperature of the upper and lower rods for 5-10 min, and then adjusting a growth rate to 2.5-30 mm/h when the surface of the floating zone becomes smooth and the melting is even, so as to start the directional solidification; and after the solidification is completed, reducing the power, and separating solidified specimens from remaining feed rod specimens; and (3) subjecting a prepared TiAl alloy single crystal rod to vacuum heat treatment at 1250-1350° C. for 12-24 hrs and then at 900° C. for 30 min, followed by furnace cooling or air cooling. 2. The method according to claim 1 , wherein in Step (1), a water cooled copper crucible is employed for electromagnetic induction levitation melting, and the alloy is melted no less than 3 times. 3. The method according to claim 1 , wherein in Step (1), the master alloy rods have a size of Φ (4-8) mm×120 mm; differential pressure suction casting is employed in the suction casting process, in which the pressure difference is incubated at 3MPa; and when the gravity casting process is used, the pressure of a protective gas is two thirds of the standard atmospheric pressure. 4. The method according to claim 1 , wherein in Step (1), the raw materials of Al, Ti, C or Si have a purity of 99.999% or higher, and the neat metal raw material of Nb has a purity of 99.9% or higher. 5. The method according to claim 1 , wherein in Step (2), the lower seed crystal rods have a length of 20-30 mm, and the upper raw material rods have a length of less than 190 mm. 6. The method according to claim 1 , wherein in Step (2), the inert gas is argon or nitrogen, and the inert gas is fed at a flow rate of 3-5 L/min during the directional solidification.
by zone-melting · CPC title
using master alloys · CPC title
using master alloys · CPC title
Heating or cooling of the melt or the crystallised material · CPC title
Alloys containing less than 50% by weight of each constituent · CPC title
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