Machine learning based model builder and its applications for pattern transferring in semiconductor manufacturing

Patent metadata

Field	Value
Publication number	US-12112116-B2
Application number	US-202218082226-A
Country	US
Kind code	B2
Filing date	Dec 15, 2022
Priority date	Mar 5, 2021
Publication date	Oct 8, 2024
Grant date	Oct 8, 2024

Abstract

A system and a method of optimizing an optical proximity correction (OPC) model for a mask pattern of a photo mask is disclosed. A machine learning (ML) based model builder includes an OPC model, measurement data and a random term generator. Random terms are generated in a M-dimensional space by the random term generator. The ML based model builder classifies the random terms to clusters by applying a classifying rule. A representative subset of the random terms is determined among the classified clusters, and the representative subset is added to the OPC model.

First claim

The invention claimed is:

1. A method of optimizing an optical proximity correction (OPC) model for a mask pattern of a photo mask, the method comprising:
obtaining an OPC model;
generating random terms;
classifying the random terms to clusters by applying feature selection, subset selection, and dimensionality reduction;
determining a representative subset of the random terms, wherein the representative subset comprises representative terms from the classified clusters selected based on an impact of the representative terms on the OPC model; and
iteratively optimizing the OPC model by using the representative subset as initial information; and
performing an OPC operation on the mask pattern using the optimized OPC model.

2. The method of claim 1 , wherein classifying the random terms to clusters further includes generating a M-dimensional space based on a number N of random terms, where N is in a range from 1,000 to 1,000,000.

3. The method of claim 2 , wherein classifying the random terms to clusters further includes generating a n-dimensional space including a first subset of measurement data based on a plurality of sample points.

4. The method of claim 3 , wherein classifying the random terms to clusters further includes generating classified clusters of the measurement data by applying a classifying rule to the n-dimensional space.

5. The method of claim 1 , wherein classifying the random terms to clusters includes selecting representative terms from each of the clusters.

6. The method of claim 1 , wherein the representative subset comprises a representative term having most significant effect on the OPC model.

7. The method of claim 1 , wherein the random terms include convoluted terms.

8. The method of claim 1 , wherein classifying the random terms to clusters includes generating classified clusters of measurement data by one of a method selected from the group consisting of a geographic center method, a moving average method, a data sampling rate method, a data magnification factor method, a data smoothing filter method, and types of sensor method.

9. The method of claim 1 , wherein the OPC model comprises an optical model and a resist model, wherein the optical model defines performance of optical components associated with a lithography scanner tool and the resist model defines distortion of an image in a photoresist layer.

10. The method of claim 1 , further comprising:
verifying the OPC model by comparing on simulated measurement data generated using the OPC model and measurement data.

11. The method of claim 1 , wherein iteratively optimizing the OPC model comprises performing steps of:
sorting the representative terms based on impact on the OPC model; and
adding a representative term, having most significant impact, to the representative subset until the performance of the representative subset meets a design requirement.

12. A method of optimizing an optical proximity correction (OPC) model for a mask pattern of a photo mask, the method comprising:
obtaining selected measurement data from a characteristic data selector that sorts a plurality of measurement data in terms of impact to the OPC model and selects one or more measurement data having most significant impact on the OPC model as the selected measurement data;
adding the selected measurement data into the OPC model;
iteratively optimizing the OPC model by adjusting the characteristic data selector using the selected measurement data as initial information until performance of the OPC model with the selected measurement data obtained by the adjusted characteristic data selector meets a design requirement and the OPC model with the added measurement data is obtained as an optimized OPC model; and
performing an OPC operation on the mask pattern using the optimized OPC model.

13. The method of claim 12 , wherein obtaining selected measurement data includes obtaining selected measurement data based on a machine learning module.

14. The method of claim 12 , wherein the OPC model comprises an optical model and a resist model, wherein the optical model defines performance of optical components associated with a lithography scanner tool and the resist model defines distortion of an image in a photoresist layer.

15. The method of claim 12 , further comprising:
manufacturing a photo mask based on the mask patterned subjected to the OPC operation.

16. A system of optimizing an optical proximity correction (OPC) model for a mask pattern of a photo mask, comprising:
a memory that stores computer executable program; and
a processor that executes computer executable components stored in the memory, wherein the computer executable program, when executed by the processor, causes the processor to:
generate random terms in a M-dimensional space;
classify the random terms to clusters by applying feature selection, subset selection, and dimensionality reduction;
determine a representative subset of the random terms, wherein the representative subset comprises representative terms from the classified clusters, and wherein the representative terms are selected based on an impact of the representative terms on the OPC model; and
iteratively optimize the OPC model by using the representative subset as initial information.

17. The system of claim 16 , wherein the OPC model includes a resist model based on an optical image and a mask pattern dependent functions associated with a lithography scanner tool.

18. The system of claim 16 , wherein the executed program further causes the processor to generate a M-dimensional space based on a number N of random terms, where N is in a range from 1,000 to 1,000,000.

19. The system of claim 18 , wherein the executed program further causes the processor to generate a n-dimensional space including a first subset of measurement data based on a plurality of sample points.

20. The system of claim 19 , wherein the executed program further causes the processor to generate classified clusters of the measurement data by applying a classifying rule to the n-dimensional space.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Yu Zhiru
• Zhang Lin
• Peng Danping
• Lei Junjiang

Classifications

• G03F7/705

  Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions · CPC title

• G06F30/398 Primary

  Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] (optical proximity correction [OPC] design processes G03F1/36) · CPC title

• G03F7/70441

  Optical proximity correction [OPC] · CPC title

• G03F1/36 Primary

  Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes · CPC title