Interconnect structure with misaligned metal lines coupled using different interconnect layer

Patent metadata

Field	Value
Publication number	US-9865542-B2
Application number	US-201715409090-A
Country	US
Kind code	B2
Filing date	Jan 18, 2017
Priority date	Dec 26, 2014
Publication date	Jan 9, 2018
Grant date	Jan 9, 2018

Abstract

In some embodiments, an interconnect structure includes first and second metal lines, and an end-to-end portion. The first metal line is formed in a first interconnect layer, extends in length substantially along a first direction and ends at a first end portion. The second metal line is formed in the first interconnect layer, starts from a second end portion, extends in length substantially along the first direction and is misaligned with the first metal line in the first direction. The end-to-end portion couples the first metal line to the second metal line, is formed in a second interconnect layer different from the first interconnect layer, and is overlapped with the first and second end portions. A width of the end-to-end portion at where the end-to-end portion is overlapped with the first end portion is wider than a width of the first end portion by at least about 10%.

First claim

What is claimed is:

1. An interconnect structure, comprising:
a first metal line formed in a first interconnect layer, extending in length substantially along a first direction and ending at a first end portion;
a second metal line formed in the first interconnect layer, starting from a second end portion, extending in length substantially along the first direction and misaligned with the first metal line in the first direction; and
a first end-to-end portion coupling the first metal line to the second metal line,
wherein
the first end-to-end portion is formed in a second interconnect layer different from the first interconnect layer, and is overlapped with the first end portion and the second end portion; and
a width of the first end-to-end portion at where the first end-to-end portion is overlapped with the first end portion is wider than a width of the first end portion by at least about 10%.

2. The interconnect structure of claim 1 , wherein
the first end-to-end portion is a single damascene via.

3. The interconnect structure of claim 1 , further comprising:
an additional portion formed in a layer different from the first interconnect layer and the second interconnect layer and coupled to the first end-to-end portion.

4. The interconnect structure of claim 1 , wherein
the first end-to-end portion has a shape comprising at least a first corner and a second corner;
the first corner being bent from substantially along the first direction to substantially along a second direction substantially orthogonal to the first direction; and
the second corner being bent from substantially along the first direction to substantially along the second direction.

5. The interconnect structure of claim 4 , wherein
the shape of the first end-to-end portion further comprises a third corner and a fourth corner;
the third corner being bent from substantially along the second direction to substantially along the first direction; and
the fourth corner being bent from substantially along the second direction to substantially along the first direction.

6. The interconnect structure of claim 4 , wherein
the first end-to-end portion has a one-time bent shape.

7. The interconnect structure of claim 1 , wherein
the first end-to-end portion has a substantially rectangular shape;
the width of the first end-to-end portion is across the width of the first end portion and a width of the second end portion.

8. The interconnect structure of claim 1 , further comprising:
a third metal line formed in the first interconnect layer and extending in length substantially along the first direction,
wherein
at least a portion of the first end portion is beyond the third metal line in the first direction.

9. The interconnection structure of claim 1 , further comprising:
a third metal line formed in the first interconnect layer and adjacent to the first metal line, and extending in length substantially along the first direction;
a fourth metal line formed in the first interconnect layer and adjacent to the second metal line, extending in length substantially along the first direction and aligned to the third metal line in the first direction; and
a connection structure coupling the third metal line to the fourth metal line using a third interconnect layer different from the first interconnect layer and the second interconnect layer.

10. A semiconductor chip, comprising:
an array cell comprising:
a first metal line formed in a first interconnect layer, extending substantially along a first direction and ending at a first end portion;

an accessing circuit configured to access the array cell and comprising:
a second metal line formed in the first interconnect layer, starting from a second end portion, and extending substantially along the first direction; and

a first end-to-end portion coupling the first metal line to the second metaline,
wherein
the first end-to-end portion is formed in a second interconnect layer different from the first interconnect layer, and is overlapped with the first end portion and the second end portion;
a width of the first end-to-end portion at where the first end-to-end portion is overlapped with the first end portion is wider than a width of the first end portion by at least about 10%; and
the coupled first metal line, second metal line and first end-to-end portion serves as an accessing line of the array cell.

11. The semiconductor chip of claim 10 , wherein
the first end-to-end portion is a single damascene via.

12. The semiconductor chip of claim 10 , further comprising:
an additional portion formed in a layer different from the first interconnect layer and the second interconnect layer and coupled to the first end-to-end portion.

13. The semiconductor chip of claim 10 , wherein
the first end-to-end portion has a shape comprising at least a first corner, and a second corner;
the first corner being bent from substantially along the first direction to substantially along a second direction substantially orthogonal to the first direction; and
the second corner being bent from substantially along the first direction to substantially along the second direction.

14. The semiconductor chip of claim 13 , wherein
the shape of the first end-to-end portion further comprises a third corner and a fourth corner;
the third corner being bent from substantially along the second direction to substantially along the first direction; and
the fourth corner being bent from substantially along the second direction to substantially along the first direction.

15. The semiconductor chip of claim 13 , wherein
the first end-to-end portion has a one-time bent shape.

16. The semiconductor chip of claim 10 , wherein
the first end-to-end portion has a substantially rectangular shape;
the width of the first end-to-end portion is across the width of the first end portion and a width of the second end portion.

17. The semiconductor chip of claim 10 , wherein
the array cell further comprises a third metal line formed in the first interconnect layer and extending substantially along the first direction, and at least a portion of the first end portion is beyond the third metal line in the first direction; and/or
the accessing circuit further comprises a fourth metal line formed in the first interconnect layer and extending substantially along the first direction, and at least a portion of the second end portion is behind the fourth metal line in the first direction.

18. The semiconductor chip of claim 10 , wherein
the array cell further comprises a third metal line formed in the first interconnect layer and extending substantially along the first direction;
the accessing circuit further comprises a fourth metal line formed in the first interconnect layer and extending substantially along the first direction; and
the semiconductor chip further comprises a connection structure coupling the third metal line to the fourth metal line using a third interconnect layer different from the first interconnect layer and the second interconnect layer for forming a power supply node for the array cell.

19. A layout, comprising:
a first interconnect layer comprising:
a first metal line extending in length substantially along a first direction and ending at a first end portion; and
a second metal line starting from a second end portion, extending in length substantially along the first direction and misaligned with the first metal line in the first direction; and

a second interconnect layer different from

Assignees

• Taiwan Semiconductor Mfg Co Ltd
• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Liaw Jhon Jhy
• Chen Yen-Huei

Classifications

• H10P52/403

  of conductive or resistive materials · CPC title

• H10W20/0698

  Local interconnections · CPC title

• H10W20/427

  Power or ground buses · CPC title

• H10W20/425

  Barrier, adhesion or liner layers · CPC title

• H10W20/081

  by forming openings in the dielectric parts · CPC title