Aluminum alloy wire, aluminum alloy strand wire, covered electrical wire, and terminal-equipped electrical wire
US-2019267151-A1 · Aug 29, 2019 · US
Al bonding wire
US12090578B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12090578-B2 |
| Application number | US-202017437802-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 12, 2020 |
| Priority date | Mar 13, 2019 |
| Publication date | Sep 17, 2024 |
| Grant date | Sep 17, 2024 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
There is provided an Al bonding wire which can provide a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the Al bonding wire is operated. The bonding wire is composed of Al or Al alloy, and is characterized in that an average crystal grain size in a cross-section of a core wire in a direction perpendicular to a wire axis of the bonding wire is 0.01 to 50 μm, and when measuring crystal orientations on the cross-section of the core wire in the direction perpendicular to the wire axis of the bonding wire, a crystal orientation <111> angled at 15 degrees or less to a wire longitudinal direction has a proportion of 30 to 90% among crystal orientations in the wire longitudinal direction.
First claim
Opening claim text (preview).
The invention claimed is: 1. A bonding wire of Al or Al alloy, wherein an average crystal grain size in a cross-section in a direction perpendicular to a wire axis of the bonding wire is 0.01 to 50 μm, a hardness of the wire is 20 to 40 in terms of Hv, and when measuring crystal orientations on the cross-section in the direction perpendicular to the wire axis of the bonding wire, a crystal orientation <111>angled at 15 degrees or less to a wire longitudinal direction has a proportion of 30 to 90% among crystal orientations in the wire longitudinal direction. 2. The bonding wire according to claim 1 , wherein a wire diameter is 50 to 600 μm.
Assignees
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Classifications
comprising aluminium [Al] · CPC title
Thermally treating · CPC title
comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title
Bond pads having multiple stacked layers · CPC title
of bond wires · CPC title
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- What does patent US12090578B2 cover?
- There is provided an Al bonding wire which can provide a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the Al bonding wire is operated. The bonding wire is composed of Al or Al alloy, and is characterized in that an average crystal grain size in a cross-section of a core wire in a direction perpendicular to a…
- Who is the assignee on this patent?
- Nippon Micrometal Corp, Nippon Steel Chemical & Mat Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification B23K35/0227. Mapped technology areas include Operations & Transport.
- When was this patent published?
- Publication date Tue Sep 17 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).