Trim and deposition profile control with multi-zone heated substrate support for multi-patterning processes

Patent metadata

Field	Value
Publication number	US-12071689-B2
Application number	US-202017429882-A
Country	US
Kind code	B2
Filing date	Feb 12, 2020
Priority date	Feb 15, 2019
Publication date	Aug 27, 2024
Grant date	Aug 27, 2024

Abstract

A substrate processing system is provided and includes a substrate support, a memory, and calibration, operating parameter, and solving modules. The substrate support supports a substrate and includes temperature control elements. The memory stores, for the temperature control elements, temperature calibration values and sensitivity calibration values. The calibration module, during calibration of the temperature control elements, performs a first calibration process to determine the temperature calibration values or a second calibration process to determine the sensitivity calibration values. The sensitivity calibration values relate at least one of trim amounts or deposition amounts to temperature changes. The operating parameter module determines operating parameters for the temperature control elements based on the temperature and sensitivity calibration values. The solving module, subsequent to the calibration of the temperature control elements, controls operation of the temperature control elements during at least one of a trim or deposition step based on the operating parameters.

First claim

What is claimed is:

1. A substrate processing system comprising:
a substrate support configured to support a first substrate and comprising a plurality of temperature control elements;
a memory configured to store, for the plurality of temperature control elements, temperature calibration values and sensitivity calibration values;
a calibration module configured to, during calibration of the plurality of temperature control elements, perform
a first calibration process to determine the temperature calibration values, the first calibration process comprising i) calculating a system response of one of the plurality of temperature control elements based on a difference between measured temperatures of the one of the plurality of temperature control elements for different power levels, ii) inverting the system response, and iii) determining the temperature calibration values of the plurality of temperature control elements based on the inverted system response, and
a second calibration process to determine the sensitivity calibration values, wherein the sensitivity calibration values relate at least one of trim amounts to temperature changes or deposition amounts to temperature changes;

an operating parameter module configured to determine a plurality of operating parameters for the plurality of temperature control elements based on the temperature calibration values and the sensitivity calibration values; and
a solving module configured, subsequent to the calibration of the plurality of temperature control elements, to control operation of the plurality of temperature control elements during at least one of a trim step or a deposition step based on the plurality of operating parameters.

2. The substrate processing system of claim 1 , wherein the calibration module is configured to, during the calibration of the plurality of temperature control elements, perform the first calibration process and the second calibration process.

3. The substrate processing system of claim 1 , wherein:
the substrate support comprises a plurality of temperature controlled zones; and
each of the plurality of temperature controlled zones includes one or more of the plurality of temperature control elements.

4. The substrate processing system of claim 3 , wherein the solving module is configured to perform at least one of open loop or closed loop control of each of the plurality of temperature controlled zones.

5. The substrate processing system of claim 3 , wherein at least one of the plurality of temperature controlled zones or the plurality of temperature control elements is implemented in an open loop or a closed loop.

6. The substrate processing system of claim 3 , wherein the solving module is configured to perform at least one of open loop or closed loop control of the plurality of temperature control elements.

7. The substrate processing system of claim 1 , wherein the first calibration process includes:
adjusting a parameter of the plurality of temperature control elements by a predetermined amount;
determining temperature changes of the first substrate or the substrate support in response to the adjusted parameter; and
based on the predetermined amount and the determined temperature changes, generating the temperature calibration values.

8. The substrate processing system of claim 1 , wherein the second calibration process includes:
determining a baseline critical dimension profile of a second substrate provided as a result of the plurality of temperature control elements being at first settings for a trim operation performed on the second substrate;
adjusting a parameter of at least one of the plurality of temperature control elements from one of the first settings to a second setting;
performing the trim operation on a third substrate;
measuring a post trim critical dimension profile for the third substrate; and
determining one of the sensitivity calibration values based on the baseline critical dimension profile, the post trim critical dimension profile and a difference between the one of the first settings and the second setting.

9. The substrate processing system of claim 1 , wherein the second calibration process includes:
determining a baseline critical dimension profile of a second substrate provided as a result of the plurality of temperature control elements being at first settings for a deposition operation performed on the second substrate;
adjusting a parameter of at least one of the plurality of temperature control elements from one of the first settings to a second setting;
performing the deposition operation on a third substrate;
measuring a post deposition critical dimension profile for the third substrate; and
determining one of the sensitivity calibration values based on the baseline critical dimension profile, the post deposition critical dimension profile and a difference between the one of the first settings and the second setting.

10. The substrate processing system of claim 1 , further comprising a user interface configured to receive a target profile,
wherein the solving module is configured to control operation of the plurality of temperature control elements during the at least one of the trim step or the deposition step based on the target profile.

11. The substrate processing system of claim 1 , wherein:
the operating parameter module is configured to analyze the sensitivity calibration values and parameter variability for a predetermined process to determine radial tuning parameters; and
the solving module is configured to control operation of the plurality of temperature control elements during the at least one of the trim step or the deposition step based on the radial tuning parameters.

12. The substrate processing system of claim 1 , wherein:
the operating parameter module is configured to analyze the sensitivity calibration values and azimuthal variability for a predetermined process to determine azimuthal tuning parameters; and
the solving module is configured to control operation of the plurality of temperature control elements during the at least one of the trim step or the deposition step based on the azimuthal tuning parameters.

13. The substrate processing system of claim 1 , wherein:
the operating parameter module is configured to
determine a plurality of values corresponding to critical dimensions of a feature of the first substrate,
determine trim, pretrim and deposition values based on the plurality of values,
determine a total correction value based on the trim, pretrim, and deposition values, and
analyze the sensitivity calibration values, parameter variability and the total correction value for a predetermined process to determine radial tuning parameters; and

the solving module is configured to control operation of the plurality of temperature control elements during the at least one of the trim step or the deposition step based on the radial tuning parameters.

14. The substrate processing system of claim 1 , wherein:
the operating parameter module is configured to
determine critical dimension imbalance, and
analyze the sensitivity calibration values, parameter variability and the critical dimension imbalance for a predetermined process to determine radial tuning parameters; and
the solving module is configured to control operation of the plurality of temperature control elements during the at least one of the trim step or the deposition step based on the radial tuning parameters.

15. A substrate processing system comprising:
a substrate support configured to support a first substrate and comprising a plurality of temperature cont

Assignees

• Lam Res Corp

Inventors

• Chandrasekharan Ramesh
• Roberts Michael Philip
• Agarwal Pulkit
• Lavoie Adrien
• Kumar Ravi
• Yang Nuoya
• Soe Chan Myae Myae
• Saurabh Ashish

Classifications

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10P72/0432

  mainly by conduction · CPC title

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P72/7602

  the wafers being placed on a robot blade or gripped by a gripper for conveyance · CPC title

• H10P72/0602 Primary

  Temperature monitoring · CPC title