TCCT match circuit for plasma etch chambers
US-9059678-B2 · Jun 16, 2015 · US
US12027410B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12027410-B2 |
| Application number | US-202117181571-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 22, 2021 |
| Priority date | Jan 16, 2015 |
| Publication date | Jul 2, 2024 |
| Grant date | Jul 2, 2024 |
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An edge ring arrangement for a processing chamber includes a first ring configured to surround and overlap a radially outer edge of an upper plate of a pedestal arranged in the processing chamber, a second ring arranged below the first moveable ring, wherein a portion of the first ring overlaps the second ring, a first actuator configured to actuate a first pillar to selectively move the first ring to a raised position and a lowered position relative to the pedestal, and a second actuator configured to actuate a second pillar to selectively move the second ring to a raised position and a lowered position relative to the pedestal.
Opening claim text (preview).
What is claimed is: 1. A substrate processing system comprising: a processing chamber; a pedestal arranged in the processing chamber, the pedestal including an upper plate; a first ring configured to surround and overlap a radially outer edge of the upper plate of the pedestal arranged in the processing chamber; a second ring arranged below the first ring, wherein a portion of the first ring overlaps the second ring; a first actuator configured to actuate a first pillar to selectively move the first ring to a raised position and a lowered position relative to the pedestal; and a second actuator configured to actuate a second pillar to selectively move the second ring to a raised position and a lowered position relative to the pedestal, wherein, the first ring includes a first self-centering feature configured to mate with a second self-centering feature of the second ring, the second ring includes a third self-centering feature configured to mate with a ring other than the first ring, and at least one of the first self-centering feature, the second self-centering feature and the third self-centering feature is a triangular-shaped self-centering feature. 2. The substrate processing system of claim 1 , wherein an outer portion of the first ring overlaps the second ring such that moving the second ring to the raised position moves the first ring to the raised position. 3. The substrate processing system of claim 2 , wherein, when the first ring is in the raised position, a bottom surface of the first ring is above an uppermost surface of the pedestal to define a gap between the bottom surface of the first ring and an upper surface of the upper plate. 4. The substrate processing system of claim 3 , further comprising a robot arm configured to remove the first ring from the processing chamber when the first ring is in the raised position. 5. The substrate processing system of claim 4 , further comprising a holder connected to the robot arm, wherein the holder includes a self-centering feature that mates with a self-centering feature on the first ring. 6. The substrate processing system of claim 1 , wherein the second ring is located radially outside of the first ring. 7. The substrate processing system of claim 1 , further comprising a third ring arranged below at least part of each of the first ring and the second ring. 8. The substrate processing system of claim 1 , wherein the first actuator is configured to move the first ring relative to the second ring to alter an edge coupling profile of the first ring. 9. The substrate processing system of claim 1 , wherein the first pillar passes through a baseplate of the pedestal to engage the first ring. 10. The substrate processing system of claim 1 , further comprising a controller configured to control the first actuator and the second actuator to selectively move the first ring and the second ring. 11. The substrate processing system of claim 1 , wherein the first ring overlaps the second ring at a sloped surface of the first ring which is non-parallel and non-perpendicular with respect to upper surfaces of the first ring and the second ring. 12. The substrate processing system of claim 1 , wherein the second ring defines a groove arranged on a bottom-facing surface of the second ring, and the groove is configured to receive the second pillar. 13. A substrate processing system comprising: a processing chamber; a pedestal arranged in the processing chamber; a first ring configured to surround the pedestal arranged in the processing chamber; a second ring arranged below the first ring, wherein (i) an outer edge of the first ring overlaps an inner edge of the second ring and (ii) an inner edge of the first ring overlaps a radially outer edge of the pedestal but does not overlap the second ring; a first actuator configured to actuate a first pillar to selectively move the second ring to a raised position and a lowered position relative to the pedestal, wherein the first ring is supported on the second ring such that raising and lowering the second ring raises and lowers the first ring relative to the pedestal; and a second actuator configured to actuate a second pillar to selectively move the first ring to a raised position and a lowered position relative to the pedestal, wherein, the first ring includes a first self-centering feature configured to mate with a second self-centering feature of the second ring, the second ring includes a third self-centering feature configured to mate with a ring other than the first ring, and at least one of the first self-centering feature, the second self-centering feature and the third self-centering feature is a triangular-shaped self-centering feature. 14. The substrate processing system of claim 13 , wherein, when the first ring is in the raised position, a bottom surface of the first ring is above an uppermost surface of the pedestal to define a gap between the bottom surface of the first ring and an upper surface of the uppermost surface. 15. The substrate processing system of claim 14 , further comprising a robot arm configured to remove the first ring from the processing chamber when the first ring is in the raised position. 16. The substrate processing system of claim 13 , further comprising a third ring arranged below at least part of each of the first ring and the second ring. 17. The substrate processing system of claim 13 , wherein the second actuator is configured to actuate the second pillar to selectively move the first ring to a raised position and a lowered position relative to the second ring. 18. The substrate processing system of claim 17 , wherein the second actuator is configured to move the first ring relative to the pedestal to alter an edge coupling profile of the first ring.
characterised by edge profile or support profile · CPC title
for drying etching · CPC title
characterised by lifting arrangements, e.g. lift pins · CPC title
Workpiece holder · CPC title
Focus rings · CPC title
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