Plasma processing apparatus and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-9011637-B2
Application number	US-201113106441-A
Country	US
Kind code	B2
Filing date	May 12, 2011
Priority date	May 12, 2010
Publication date	Apr 21, 2015
Grant date	Apr 21, 2015

Abstract

A plasma processing apparatus and a method of manufacturing a semiconductor device which can prevent a discharge from occurring between a substrate such as a semiconductor wafer or the like, and a base material of a lower electrode or a peripheral structure of the base material, and can improve yield and productivity. The plasma processing apparatus includes a processing chamber, a lower electrode, an upper electrode, and a plurality of lifter pins for supporting a substrate to be processed. Each of the lifter pins includes a pin body part and a lid part which is disposed on a top portion of the pin body part and has an outer diameter greater than an outer diameter of the pin body part. The lower electrode includes through-holes for lifter pins each of which includes a pin body receiving part, which has an inner diameter less than the outer diameter of the lid part and receives the pin body part, and a lid receiving part, which is formed in an upper portion of the pin body receiving part and receives the cover portion, and in which the lifter pins are disposed. In a state where the lifter pins are lowered, the lid part is received in the lid receiving part, and the upper portion of the pin body receiving part is blocked by the lid part.

First claim

What is claimed is:

1. A plasma processing apparatus comprising:
processing chamber;
a lower electrode which is provided in the processing chamber, comprises a base material which is formed of a conductive metal and to which high-frequency power is applied, and serves as a holding stage on which a substrate to be processed is held;
an upper electrode which is provided in the processing chamber to face the lower electrode;
a plurality of lifter pins which freely protrude from and retreat into a top surface of the lower electrode and support the substrate over the lower electrode;
a focus ring which is disposed on the lower electrode to surround the substrate;
a lifter pin for focus ring which contacts the focus ring, is electrically connected to the focus ring, moves vertically and supports the focus ring over the lower electrode; and
an electrical connection mechanism which electrically connects between the base material of the lower electrode and the focus ring with the lifter pin for focus ring and a current control element therebetween, and generates a direct current according to a potential difference,
wherein each of the lifter pins comprises a pin body part and a lid part which is disposed on a top portion of the pin body part and has an outer diameter greater than an outer diameter of the pin body part;
the lower electrode comprises through-holes for lifter pins each of which comprises a pin body receiving part, which has an inner diameter less than the outer diameter of the lid part, has an inner surface covered with an insulating material, and receives the pin body part via the insulating material, and a lid receiving part, which is formed in an upper portion of the pin body receiving part and receives the lid part, and in which the lifter pins are disposed; and
in a state where the lifter pins are lowered, the lid part is received in the lid receiving part such that an upper surface of the lid part and an upper surface of the lower electrode surrounding the lid part are placed at the same height, and the upper portion of the pin body receiving part is blocked by the lid part.

2. The plasma processing apparatus of claim 1 , wherein the current control element comprises a resistance element.

3. The plasma processing apparatus of claim 2 , wherein the resistance element is configured such that the base material of the lower electrode and the focus ring are electrically connected to each other with a resistance value of 20 MSΩto 200 MΩ.

4. The plasma processing apparatus of claim 1 , wherein the current control element comprises a Zener diode.

Assignees

• Yamamoto Takashi
• Tokyo Electron Ltd

Inventors

• Yamamoto Takashi

Classifications

• H10P72/7612

  characterised by lifting arrangements, e.g. lift pins · CPC title

• H10P72/722

  Details of electrostatic chucks · CPC title

• H01J37/32568

  Relative arrangement or disposition of electrodes; moving means · CPC title

• H01J37/32577

  Electrical connecting means · CPC title

• H01L21/68742

  Electricity · mapped topic