Contact resistance of a metal liner in a phase change memory cell

Patent metadata

Field	Value
Publication number	US-11957069-B2
Application number	US-202117451861-A
Country	US
Kind code	B2
Filing date	Oct 22, 2021
Priority date	Oct 22, 2021
Publication date	Apr 9, 2024
Grant date	Apr 9, 2024

Abstract

An approach to provide a semiconductor structure for a phase change memory cell with a first liner material surrounding a sidewall of a hole in a dielectric material where the hole in the dielectric is on a bottom electrode in the dielectric material. The semiconductor structure includes a layer of a second liner material on the first liner material, where the second liner material has an improved contact resistance to a phase change material. The semiconductor structure includes the phase change material abutting the layer of the second liner material on the first liner material. The phase change material fills the hole in the dielectric material. The second liner material that is between the phase change material and the first liner material provides a lower contact resistivity with the phase change material in the crystalline phase than the first liner material.

First claim

What is claimed is:

1. A phase change memory cell comprising:
a first liner material in a dielectric material contacts a bottom electrode and a top electrode, wherein the first liner material is between the dielectric material and a second liner material; and
the second liner material is on the first liner material between the first liner material and a phase change material, wherein the second liner material has a lower electrical contact resistivity with the phase change material than the first liner material.

2. The phase change memory cell of claim 1 , wherein the second liner material with the lower electrical contact resistivity with the phase change material is composed of a material selected from the group consisting of a metal germanosilicide material, a metal germanide material, and a metal silicide material.

3. The phase change memory cell of claim 2 , wherein the second liner material with the lower electrical contact resistivity with the phase change material provides an electrical contact resistivity between the second liner material and the phase change material in a crystalline phase that is lower than the electrical contact resistivity between the first liner material and the phase change material in the crystalline phase.

4. The phase change memory cell of claim 1 , wherein the first liner material is composed of a material selected from the group consisting of titanium nitride, tantalum nitride, silicon, germanium, amorphous carbon, tantalum, titanium, and a metal nitride.

5. The phase change memory cell of claim 1 , wherein the phase change material fills a hole in the dielectric material, and wherein a bottom of the hole that is on the bottom electrode and sidewalls of the hole are surrounded by the first liner material that is between the second dielectric material and the dielectric material.

6. The phase change memory cell of claim 1 , wherein the phase change material is selected from the group consisting of a doped phase change material and a multilayer phase change material with one of more layers of the phase change material and the doped phase change material.

7. The phase change memory cell of claim 1 , further comprising:
a top electrode over a top surface of the phase change material, the second liner material, the first liner material, and a portion of the dielectric material adjacent to the first liner material.

8. A phase change memory cell comprising:
one or more heater elements in a first dielectric material that each are on a portion of a metal layer in a semiconductor structure;
a first layer of an improved liner material over the one or more heater elements in the first dielectric material and over one or more portions of the dielectric material adjacent to the one or more heater elements;
a phase change material over the first layer of the improved liner material;
a second layer of the improved liner material over the phase change material; and
a top electrode over the second layer of the improved liner forming a phase change memory device.

9. The phase change memory cell of claim 8 , further comprising:
a dielectric material over the top electrode;
a first contact on a portion of the top electrode; and
a second contact on another portion of the metal layer adjacent to the portion of the metal layer under each of the one or more heater elements, wherein the second contact resides in a cap dielectric and in the first dielectric material.

10. The phase change memory cell of claim 8 , wherein the first layer of an improved liner material and the second layer of the improved liner material are each composed of a material selected from the group consisting of metal germanosilicide material, a metal germanide material, and a metal silicide material.

11. The phase change memory cell of claim 8 , wherein the first layer of an improved liner material and the second layer of the improved liner material have a lower contact resistivity with the phase change material in a crystalline phase than a conventional phase change memory cell liner composed of a material selected from the group consisting of titanium nitride, tantalum nitride, silicon, germanium, amorphous carbon, tantalum, titanium, and a metal nitride.

12. The phase change memory cell of claim 8 , wherein the phase change material is an undoped phase change material composed of germanium, selenium, and tellurium.

13. The phase change memory cell of claim 8 , wherein the phase change material is between the first layer of an improved liner material on the one or more heater elements and the second layer of the improved liner material under the top electrode, and wherein a bottom electrode is over a portion of a first metal layer and the top electrode is under a contact to a second metal layer above the first metal layer.

14. The phase change memory cell of claim 8 , wherein the one or more heater elements are composed of alternating layers of titanium nitride and tantalum nitride.

15. A phase change memory cell comprising:
one or more heater elements in a first dielectric material that each are on a portion of a metal layer in a semiconductor structure;
a first layer of an improved liner material over the one or more heater elements in the first dielectric material and over one or more portions of the dielectric material adjacent to the one or more heater elements;
a first phase change material over the first layer of the improved liner material;
a second phase change material over the first phase change material, wherein the second phase change material is doped;
a third phase change material over the second phase change material;
a second layer of the improved liner material over the third phase change material; and
a top electrode contacting a top electrode over the second layer of the improved liner forming a phase change memory device.

16. The phase change memory cell of claim 15 , wherein the first phase change material and the third phase change material are undoped.

17. The phase change memory cell of claim 15 , wherein the first layer of an improved liner material and the second layer of the improved liner material are each a doped liner material when the phase change material is composed of germanium, selenium, and tellurium.

18. The phase change memory cell of claim 15 , wherein the improved liner material with a lower electrical contact resistivity with the first phase change material and the third phase change material provides an electrical contact resistivity between the improved liner material and the first phase change material and the third phase change material in a crystalline phase that is lower than the electrical contact resistivity between the first phase change material and the third phase change material in the crystalline phase than a conventional phase change memory cell liner composed of a material selected from the group consisting of titanium nitride, tantalum nitride, silicon, germanium, amorphous carbon, tantalum, titanium, and a metal nitride.

Assignees

• IBM

Inventors

• Ok Injo
• Gluschenkov Oleg
• Reznicek Alexander
• Seo Soon-Cheon

Classifications

• H10N70/235 Primary

  between different crystalline phases, e.g. cubic and hexagonal · CPC title

• H10B63/30

  comprising selection components having three or more electrodes, e.g. transistors · CPC title

• H10N70/023

  by chemical vapor deposition, e.g. MOCVD, ALD · CPC title

• H10N70/026

  by physical vapor deposition, e.g. sputtering · CPC title

• H10N70/063

  by etching of pre-deposited switching material layers, e.g. lithography · CPC title