Phase Change Material In An Electronic Switch Having A Flat Profile
US-2024341205-A1 · Oct 10, 2024 · US
by physical vapor deposition, e.g. sputtering
by physical vapor deposition, e.g. sputtering · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10N70/026 |
| Official title | {by physical vapor deposition, e.g. sputtering} |
| Display label | by physical vapor deposition, e.g. sputtering |
| Total patents | 682 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 119 |
| 2016 | 84 |
| 2017 | 50 |
| 2018 | 51 |
| 2019 | 75 |
| 2020 | 78 |
| 2021 | 45 |
| 2022 | 40 |
| 2023 | 39 |
| 2024 | 48 |
| 2025 | 42 |
| 2026 | 11 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Non-volatile memory and methods of fabricating the same
US-2024268126-A1 · Aug 8, 2024 · US
Solid memory
US-9224460-B2 · Dec 29, 2015 · US
Memory structure and preparation method thereof
US-9219099-B1 · Dec 22, 2015 · US
Method of manufacturing a phase change memory device
US-2015364678-A1 · Dec 17, 2015 · US
Memory cells with recessed electrode contacts
US-2015364683-A1 · Dec 17, 2015 · US
Highly Reliable Nonvolatile Memory and Manufacturing Method Thereof
US-2015349253-A1 · Dec 3, 2015 · US
Resistive random-access memory (rram) with a low-k porous layer
US-2015349251-A1 · Dec 3, 2015 · US
Resistive random-access memory (rram) with multi-layer device structure
US-2015349250-A1 · Dec 3, 2015 · US
Semiconductor device, related manufacturing method, and related electronic device
US-2015340604-A1 · Nov 26, 2015 · US
Phase transition devices and smart capacitive devices
US-2015340607-A1 · Nov 26, 2015 · US
Methods of forming phase change memory with various grain sizes
US-9190610-B2 · Nov 17, 2015 · US
Rram cell structure with laterally offset beva/teva
US-2015325786-A1 · Nov 12, 2015 · US
Nonvolatile storage element and method for manufacturing same
US-9184381-B2 · Nov 10, 2015 · US
Phase change memory stack with treated sidewalls
US-2015318038-A1 · Nov 5, 2015 · US
Resistive random access memory cells having shared electrodes with transistor devices
US-9178000-B1 · Nov 3, 2015 · US
Surface treatment to improve resistive-switching characteristics
US-9178149-B2 · Nov 3, 2015 · US
Two-terminal reversibly switchable memory device
US-9159913-B2 · Oct 13, 2015 · US
Solid memory
US-9153315-B2 · Oct 6, 2015 · US
Semiconductor device
US-2015279923-A1 · Oct 1, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10N70/026?
- CPC H10N70/026 is the Cooperative Patent Classification code for “by physical vapor deposition, e.g. sputtering.”
- How many patents are filed under CPC H10N70/026 (by physical vapor deposition, e.g. sputtering)?
- Our database includes 682 publications tagged with this CPC code.
- Is patent activity under CPC H10N70/026 growing?
- Publication counts under this code: 48 in 2024 vs 42 in 2025 (latest complete years).