Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium

Patent metadata

Field	Value
Publication number	US-11935762-B2
Application number	US-202217889054-A
Country	US
Kind code	B2
Filing date	Aug 16, 2022
Priority date	Mar 27, 2020
Publication date	Mar 19, 2024
Grant date	Mar 19, 2024

Abstract

There is provided a technique that includes: a first processing module including a first process container in which at least one substrate is processed, a first utility system including a first supply system which supplies a first processing gas into the first process container and a surface of the first utility system is connected or arranged close to the first processing module; and a first vacuum pump arranged at the same level as a first exhaust port of the first process container. The first vacuum pump exhausts an inside of the first process container and includes a first intake port formed laterally at a position substantially facing the first exhaust port of the first process container. A first exhaust pipe configured to substantially linearly bring the first exhaust port into fluid communication with the first intake port and including a first valve installed in a flow path.

First claim

What is claimed is:

1. A substrate processing apparatus, comprising:
a first processing module including a first process container in which at least one substrate is processed and a first transfer chamber connected to the first process container below the first process container;
a first utility system including a first supply system configured to supply a first processing gas into the first process container, a surface of the first utility system being connected or arranged close to the first processing module;
a first vacuum pump arranged on a same floor as the first processing module, equipped with a first intake port, and configured to exhaust an inside of the first process container;
a first exhaust pipe configured to bring a first exhaust port of the first process container into fluid communication with the first intake port and including a first valve installed in a flow path;
a frame configured to support the exhaust pipe; and
a plurality of connectors, at least one of the plurality of connectors comprising
a vibration damper installed on at least one of the plurality of connectors between the frame and the exhaust pipe,
wherein the frame is connected to the first transfer chamber by a first vibration-damping fastener.

2. The substrate processing apparatus of claim 1 , further comprising a loading port arranged in front of the first processing module,
wherein the first vacuum pump further comprises a casing with an outer side surface configured such that the outer side surface does not protrude more outward than an outer side surface of the first utility system.

3. The substrate processing apparatus of claim 1 , wherein the first vacuum pump comprises a rotating shaft respectively extending in the vertical direction and requires an exhaust port of the first vacuum pump to be connected to an intake of an auxiliary vacuum-exhauster.

4. The substrate processing apparatus of claim 1 , further comprising a gantry configured to support the first vacuum pump at a predetermined level and be movable on a floor,
wherein the first exhaust pipe is configured to allow a detachable connection to the first intake port.

5. The substrate processing apparatus of claim 1 , further comprising:
a second processing module arranged next to the first processing module and including a second process container in which the at least one substrate is processed;
a second utility system including a second supply system configured to supply a second processing gas into the second process container, a surface of the second utility system is connected or arranged close to the second processing module;
a second vacuum pump arranged at a same level as a second exhaust port of the second process container and configured to exhaust an inside of the second process container,
a second vacuum pump being equipped with a second intake port formed laterally at a position substantially facing the second exhaust port of the second process container; and
a second exhaust pipe configured to substantially linearly bring the second exhaust port into fluid communication with the second intake port and including a second valve installed in a flow path.

6. The substrate processing apparatus of claim 5 , wherein the at least one substrate includes a plurality of substrates, the first process container is configured to accommodate the plurality of substrates arranged in multiple stages on a first substrate holder and thermally treat the substrates, and the second process container is configured to accommodate the plurality of substrates arranged in multiple stages on a second substrate holder and thermally treat the substrates,
wherein a first maintenance port configured to be capable of allowing the first process container or the first substrate holder to be taken out of the substrate processing apparatus is formed at a side surface of the first processing module at a position below or above the first exhaust port, and
wherein a second maintenance port configured to be capable of allowing the second process container or the second substrate holder to be taken out of the substrate processing apparatus is formed at a side surface of the second processing module at a position below or above the second exhaust port.

7. The substrate processing apparatus of claim 5 , wherein a maintenance area, which is formed by being sequentially surrounded by the first vacuum-exhauster, the first utility system, the first processing module, the second processing module, the second utility system, and the second vacuum-exhauster, is configured to have a width and a height large enough to unload at least one selected from the group of the first process container, the first substrate holder, the second process container, and the second substrate holder taken out via the first maintenance port and the second maintenance port respectively.

8. The substrate processing apparatus of claim 5 , further comprising:
a third processing module arranged next to the second processing module and including a third process container in which at least one substrate is processed;
a third utility system including a third supply system configured to supply a third processing gas into the third process container; and
a delivery chamber connected to the first processing module, the second processing module and the third processing module through a first gate, a second gate and a third gate, respectively, and configured to be capable of transferring a substrate therebetween.

9. The substrate processing apparatus of claim 8 , wherein the first processing module and the second processing module are arranged in symmetry with respect to a first plane, and the first utility system and the second utility system are arranged in symmetry with respect to the first plane,
wherein a first maintenance area is formed between the first utility system and the second utility system,
wherein the second utility system is adjacent to the third utility system on a side surface opposite to the first maintenance area, and
wherein a second maintenance area is formed behind the third process module and opened at a side opposite to the second utility system.

10. The substrate processing apparatus of claim 9 , wherein the second processing module and the third processing module are arranged in symmetry with respect to a second plane, and the second utility system and the third utility system are arranged in symmetry with respect to the second plane.

11. The substrate processing apparatus of claim 9 , wherein the first processing module, the second processing module and the third processing module are arranged side by side in a lateral direction on a rear side of the delivery chamber, and
wherein the second utility system and the third utility system are arranged back to back.

12. The substrate processing apparatus of claim 8 , wherein the third processing module comprises a single-wafer chamber in which a wafer is processed with radicals by generating a plasma therein.

13. The substrate processing apparatus of claim 1 , further comprising:
a second vibration-damping fastener connecting the vacuum pump to the frame.

14. The substrate processing apparatus of claim 1 , further comprising:
a first bellows connecting an end of the first exhaust pipe to the first intake port; and
a second bellows connecting another end of the first exhaust pipe to the first intake port.

Assignees

• Kokusai Electric Corp

Inventors

• Kamimura Daigi
• Taniyama Tomoshi
• Shirako Kenji
• Shimada Hironori
• Horii Akira
• Nakada Takayuki
• YAMASHIMA Norihiro

Classifications

• H10P72/0431

  Apparatus for thermal treatment · CPC title

• H10P72/0402 Primary

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P72/0462

  characterised by the construction of the processing chambers, e.g. modular processing chambers · CPC title

• H04W72/0453

  Resources in frequency domain, e.g. a carrier in FDMA · CPC title

• H04W72/0446

  Resources in time domain, e.g. slots or frames · CPC title