Substrate processing apparatus, substrate support, and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-11929272-B2
Application number	US-202016944299-A
Country	US
Kind code	B2
Filing date	Jul 31, 2020
Priority date	Jul 31, 2019
Publication date	Mar 12, 2024
Grant date	Mar 12, 2024

Abstract

There is provided a technique that includes a substrate support including a support column made of metal and a plurality of supports installed at the support column and configured to support a plurality of substrates in multiple stages; a process chamber configured to accommodate the plurality of substrates supported by the substrate support; and a heater configured to heat the plurality of substrates accommodated in the process chamber, wherein the plurality of supports includes at least a contact portion configured to make contact with the plurality of substrates and made of at least one selected from the group of a metal oxide and a non-metal material.

First claim

What is claimed is:

1. A substrate processing apparatus, comprising:
a substrate support including:
a plurality of support columns made of metal; and
a plurality of supports installed at the plurality of support columns and configured to support a plurality of substrates in multiple stages;
a process chamber configured to accommodate the plurality of substrates supported by the substrate support; and
a heater configured to heat the plurality of substrates accommodated in the process chamber,
wherein each of the plurality of supports comprises a plurality of support pins inserted into holes as recesses in the plurality of support columns and are fixed at predetermined intervals, wherein a diameter of the plurality of support columns is between 5 mm to 10 mm, and
wherein each of the plurality of support pins includes:
a metal portion made of metal that is directly connected to one of the plurality of support columns; and
a contact portion that has a semicircular columnar shape or a flat plate shape, is configured to make contact with one of the plurality of substrates, and is composed of a film of a non-metal material that covers the metal portion, wherein the non-metal material is at least one material selected from the group of silicon, silicon oxide, silicon nitride, and silicon carbide.

2. The substrate processing apparatus of claim 1 , wherein the plurality of support columns is covered with at least one coating selected from the group of a film of a metal oxide and a film of a non-metal material.

3. The substrate processing apparatus of claim 1 , wherein the plurality of support columns includes at least a portion that is not covered with a film of a metal oxide or a film of a non-metal material and exposes its surface made of the metal.

4. The substrate processing apparatus of claim 2 , wherein the metal oxide is at least one selected from the group of chromium oxide and aluminum oxide.

5. A substrate support configured to support a plurality of substrates to be accommodated in a process chamber, comprising:
a plurality of support columns made of metal; and
a plurality of supports installed at the plurality of support columns and configured to support the plurality of substrates in multiple stages,
wherein each of the plurality of supports comprises a plurality of support pins inserted into holes as recesses in the plurality of support columns and are fixed at predetermined intervals, wherein a diameter of the plurality of support columns is between 5 mm to 10 mm, and
wherein each of the plurality of support pins includes:
a metal portion made of metal directly connected to one of the plurality of support columns; and
a contact portion that has a semicircular columnar shape or a flat plate shape, is configured to make contact with one of the plurality of substrates, and is composed of a film of a non-metal material that covers the metal portion, wherein the non-metal material is at least one material selected from the group of silicon, silicon oxide, silicon nitride, and silicon carbide.

6. The substrate processing apparatus of claim 1 , wherein a pitch between the predetermined intervals is 8 mm.

7. The substrate support of claim 5 , wherein a pitch between the predetermined intervals is 8 mm.

Assignees

• Kokusai Electric Corp

Inventors

• Suzaki Kenichi

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P72/0434

  mainly by convection · CPC title

• H10P72/123 Primary

  characterised by a material, a roughness, a coating or the like · CPC title

• H10P72/127 Primary

  characterised by the substrate support · CPC title

• H10P72/0602

  Temperature monitoring · CPC title