Method of manufacturing semiconductor device and non-transitory computer-readable recording medium

Patent metadata

Field	Value
Publication number	US-9793112-B2
Application number	US-201615078253-A
Country	US
Kind code	B2
Filing date	Mar 23, 2016
Priority date	Oct 10, 2013
Publication date	Oct 17, 2017
Grant date	Oct 17, 2017

Abstract

To improve the characteristics of a film formed on a substrate, a method of manufacturing a semiconductor device includes: loading a substrate into a processing container, the substrate being provided with a film having a silazane bond, the film being subjected to pre-baking; supplying oxygen-containing gas at a first temperature not higher than the temperature of the pre-baking; and supplying processing gas containing at least any one of steam and hydrogen peroxide at a second temperature higher than the first temperature.

First claim

The invention claimed is:

1. A method of manufacturing a semiconductor device comprising:
loading a substrate into a processing container, the substrate being provided with a film having a silazane bond, the film being subjected to pre-baking;
supplying oxygen-containing gas to the substrate at a first temperature not higher than a temperature of the pre-baking; and
supplying processing gas containing at least any one of steam or hydrogen peroxide to the substrate at a second temperature higher than the first temperature, where supplying processing gas is performed after supplying oxygen-containing gas; and
annealing in which supply of the processing gas and the oxygen-containing gas is stopped and nitrogen-containing gas is supplied, after the supplying processing gas.

2. The method of manufacturing a semiconductor device according to claim 1 , wherein the oxygen-containing gas contains at least one of oxygen gas, ozone gas, nitric oxide gas and nitrous oxide gas.

3. The method of manufacturing a semiconductor device according to claim 2 , wherein the film having the silazane bond is a film containing a silazane bond of a low molecular weight, and the oxygen-containing gas is supplied to the substrate to change skeletal structure of the silazane bond of the low molecular weight to silicon oxide, in the supplying the oxygen-containing gas.

4. The method of manufacturing a semiconductor device according to claim 1 , wherein the oxygen-containing gas is supplied to the substrate to change skeletal structure of the silazane bond to silicon oxide, in supplying oxygen-containing gas.

5. The method of manufacturing a semiconductor device according to claim 1 , including exhausting the inside of the processing container while keeping the temperature of the substrate, after the supplying the processing gas.

6. The method of manufacturing a semiconductor device according to claim 5 , including cooling the substrate after supplying inert gas into the processing container while keeping the temperature of the substrate until a pressure of the inside of the processing container reaches a predetermined pressure, after the exhausting the inside of the processing container.

7. The method of manufacturing a semiconductor device according to claim 1 , wherein the first temperature is 150° C. or lower, and the second temperature is in a range from 250° C. to 400° C.

8. The method of manufacturing a semiconductor device according to claim 1 , wherein the film having the silazane bond is a film containing a silazane bond of a low molecular weight, and skeletal structure of the silazane bond of the low molecular weight is changed to silicon oxide, in the supplying the oxygen-containing gas.

9. The method of manufacturing a semiconductor device according to claim 1 , wherein the film having the silazane bond is a film formed by a CVD method.

10. A non-transitory computer-readable recording medium configured to record a program to be executed by a computer, the program including procedures of:
loading a substrate into a processing container, the substrate being provided with a film having a silazane bond, the film being subjected to pre-baking;
supplying oxygen-containing gas to the substrate at a first temperature not higher than a temperature of the pre-baking; and
supplying processing gas containing at least any one of steam or hydrogen peroxide to the substrate at a second temperature higher than the first temperature, where supplying processing gas is performed after supplying oxygen-containing gas; and
annealing in which supply of the processing gas and the oxygen-containing gas is stopped and nitrogen-containing gas is supplied, after supplying processing gas.

11. A method of manufacturing a semiconductor device comprising:
loading a substrate into a processing container, the substrate being provided with a film having a silazane bond, the film being subjected to pre-baking;
supplying oxygen-containing gas to the substrate at a first temperature not higher than a temperature of the pre-baking; and
supplying processing gas containing at least any one of steam or hydrogen peroxide to the substrate at a second temperature higher than the first temperature;
exhausting the inside of the processing container while keeping the temperature of the substrate, after supplying processing gas; and
cooling the substrate after supplying inert gas into the processing container while keeping the temperature of the substrate until a pressure of the inside of the processing container reaches a predetermined pressure, after exhausting the inside of the processing container.

Assignees

• Hitachi Int Electric Inc

Inventors

• Joda Takuya
• Kakuda Toru
• Okuno Masahisa
• Tateno Hideto

Classifications

• H10P95/906

  for altering the shape of semiconductors, e.g. smoothing the surface · CPC title

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6689

  the compound being a silazane · CPC title

• H10P14/6522

  introduced into a nitride material, e.g. changing SiN to SiON · CPC title