Ovenized MEMS

Patent metadata

Field	Value
Publication number	US-11909354-B2
Application number	US-202217824389-A
Country	US
Kind code	B2
Filing date	May 25, 2022
Priority date	Dec 6, 2018
Publication date	Feb 20, 2024
Grant date	Feb 20, 2024

Abstract

One or more heating elements are provided to heat a MEMS component (such as a resonator) to a temperature higher than an ambient temperature range in which the MEMS component is intended to operate—in effect, heating the MEMS component and optionally related circuitry to a steady-state “oven” temperature above that which would occur naturally during component operation and thereby avoiding temperature-dependent performance variance/instability (frequency, voltage, propagation delay, etc.). In a number of embodiments, an IC package is implemented with distinct temperature-isolated and temperature-interfaced regions, the former bearing or housing the MEMS component and subject to heating (i.e., to oven temperature) by the one or more heating elements while the latter is provided with (e.g., disposed adjacent) one or more heat dissipation paths to discharge heat generated by transistor circuitry (i.e., expel heat from the integrated circuit package).

First claim

We claim:

1. An integrated circuit comprising:
a first die having a microelectromechanical systems (MEMS) resonant structure;
a second die having at least one transistor;
a third die having circuitry; and
the integrated circuit further comprising a heating element, a sensor, a thermally-conductive element and an insulator, the sensor to sense a temperature experienced by the first die and the second die, the heating element to raise the temperature experienced by the first die and the second die to a predetermined temperature that is different than a temperature of an ambient environment external to said integrated circuit, the insulator to insulate the third die from experiencing the predetermined temperature, the thermally-conductive element coupling the third die with the ambient environment, so as to urge the third die toward the temperature of the ambient environment;
wherein the integrated circuit is to output, via an external contact of said integrated circuit, a timing signal, the timing signal being dependent on a frequency of resonant motion of the MEMS resonant structure, the timing signal generated using each of the at least one transistor of the second die and the circuitry of the third die.

2. The integrated circuit of claim 1 wherein the second die comprises the sensor.

3. The integrated circuit of claim 1 wherein the second die comprises the heating element.

4. The integrated circuit of claim 1 wherein the at least one transistor of the second die comprises a complementary metal oxide semiconductor (CMOS) transistor, wherein the circuitry of the third die comprises at least one transistor and wherein the at least one transistor of the third die comprises a CMOS transistor.

5. The integrated circuit of claim 1 wherein the at least one transistor of the second die comprises a bipolar transistor.

6. The integrated circuit of claim 1 wherein the integrated circuit is embodied as an oven-controlled oscillator (OCXO) integrated circuit, wherein the heating element is to raise the MEMS resonant structure to the predetermined temperature in the normal mode of operation and wherein the predetermined temperature greater than the operating temperature range.

7. The integrated circuit of claim 1 wherein the second die comprises sense-sustain circuitry, wherein the third die comprises a locked-loop circuit and wherein the integrated circuit is to generate the timing signal using the locked-loop circuit.

8. The integrated circuit of claim 1 wherein the first die and the second die are stacked and are electrically interconnected by solder bumps.

9. The integrated circuit of claim 1 wherein the circuitry of the third die is adapted to store temperature-dependent control information.

10. The integrated circuit of claim 9 wherein the circuitry of the third die also comprises a locked-loop circuit and wherein the circuitry of the third die is adapted to control the locked-loop circuit using the temperature-dependent control information, so as to correct for temperature-dependent variation of a resonant frequency signal which is input to the third die from at least one of the first die and the second die, the resonant frequency signal being dependent on the resonant motion of the MEMS resonant structure.

11. The integrated circuit of claim 9 wherein the circuitry of the third die comprises control circuitry to control the heating element using the temperature-dependent control information.

12. The integrated circuit of claim 1 wherein:
the MEMS resonant structure is a first MEMS resonant structure;
the first die comprises a second MEMS resonant structure;
the second die comprises the heating element; and
the third die comprises circuitry to generate a digital temperature value dependent on divergence in resonant frequency between the first MEMS resonant structure and the second MEMS resonant structure, the divergence being a function of temperature experienced by the first MEMS resonant structure and the second MEMS resonant structure.

13. The integrated circuit of claim 12 wherein the third die comprises control circuitry to control the heating element using the digital temperature value.

14. The integrated circuit of claim 1 wherein the first die and the second die are electrically interconnected by wire bonds.

15. An integrated circuit comprising:
a first temperature domain and a second temperature domain;
within the first temperature domain, a first die having at least one microelectromechanical systems (MEMS) resonant structure and a second die having at least one transistor;
within the second temperature domain, a third die having at least one transistor;
the second die having a heating element to heat the first temperature domain to a predetermined temperature that is different than a temperature of an ambient environment external to said integrated circuit;
a sensor to sense the temperature in the first temperature domain, and control circuitry, on the third die, to control the heating element in response to sensed temperature so as to urge the first temperature domain toward the predetermined temperature;
an insulator to maintain a temperature difference between the second temperature domain and the first temperature domain;
a thermally conductive element coupling the third die with the ambient environment, so as to urge the third die toward the temperature of the ambient environment;
wherein the integrated circuit is to output, via an external contact of said integrated circuit, a timing signal, the timing signal corresponding to a frequency of resonant motion of the at least one MEMS resonant structure, the timing signal generated using each of the at least one transistor of the second die and the at least one transistor of the third die.

16. The integrated circuit of claim 15 wherein the second die comprises the sensor.

17. The integrated circuit of claim 15 wherein the at least one transistor of a first one of the second die and the third die is a complementary metal oxide semiconductor (CMOS) transistor and wherein the at least one transistor of a second one of the second die and the third die comprises a bipolar transistor, each one of the first die and the second die corresponding to respective process technologies.

18. The integrated circuit of claim 15 wherein each of the at least one transistor of the second die and the at least one transistor of the third die comprises a complementary metal oxide semiconductor (CMOS) transistor.

19. The integrated circuit of claim 15 wherein the integrated circuit is embodied as an oven-controlled oscillator (OCXO) integrated circuit, wherein the heating element is to raise the at least one MEMS resonant structure to the predetermined temperature in the normal mode of operation, wherein the OXCO integrated circuit has an operating temperature range in a normal mode of operation and wherein the predetermined temperature is greater than the operating temperature range.

20. The integrated circuit of claim 15 wherein the third die comprises a locked-loop circuit, and wherein the timing signal is generated using the locked loop circuit.

21. The integrated circuit of claim 15 wherein the first die comprises at least one electrode that is to electrostatically drive the at least one MEMS resonant structure.

22. The integrated circuit of claim 15 wherein the MEMS resonant structure comprises at least one electrode and a piezoelectric material, and wherein the MEMS resonant structure is to vibrate in depende

Assignees

• Sitime Corp

Inventors

• Arft Carl
• Partridge Aaron
• Lutz Markus
• Grosjean Charles I

Classifications

• H10W90/722

  between stacked chips · CPC title

• H10W74/114

  by a substrate and the encapsulations · CPC title

• H10W40/10 Primary

  Arrangements for heating · CPC title

• H03B5/04 Primary

  Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature · CPC title

• B81B3/0081

  Thermal properties · CPC title