Microelectromechanical resonator

Patent metadata

Field	Value
Publication number	US-11228298-B2
Application number	US-201916245184-A
Country	US
Kind code	B2
Filing date	Jan 10, 2019
Priority date	Feb 9, 2014
Publication date	Jan 18, 2022
Grant date	Jan 18, 2022

Abstract

A moveable micromachined member of a microelectromechanical system (MEMS) device includes an insulating layer disposed between first and second electrically conductive layers. First and second mechanical structures secure the moveable micromachined member to a substrate of the MEMS device and include respective first and second electrical interconnect layers coupled in series, with the first electrically conductive layer of the moveable micromachined member and each other, between first and second electrical terminals to enable conduction of a first joule-heating current from the first electrical terminal to the second electrical terminal through the first electrically conductive layer of the moveable micromachined member.

First claim

What is claimed is:

1. A method of fabricating a microelectromechanical system (MEMS) device having a substrate and first and second electrical terminals, the method comprising:
forming a moveable micromachined member having a piezoelectric insulating layer disposed between first and second electrically conductive layers; and
forming first and second mechanical structures that secure the moveable micromachined member to the substrate and include respective first and second electrical interconnect layers coupled in series, with the first electrically conductive layer of the moveable micromachined member and each other, between the first and second electrical terminals to enable conduction of a first joule-heating current from the first electrical terminal to the second electrical terminal through the first electrically conductive layer of the moveable micromachined member.

2. The method of claim 1 wherein forming moveable micromachined member comprises patterning the first electrically conductive layer to include first and second regions of relatively low resistance and a relatively high-resistance passageway coupled between the first and second regions.

3. The method of claim 2 wherein forming the first and second mechanical structures comprises electrically coupling the first and second electrical interconnect layers to the first and second regions of the first electrically conductive layer, respectively, such that the relatively high-resistance passageway is coupled in series with the first and second electrical interconnect layers between the first and second electrical terminals.

4. The method of claim 3 wherein patterning the first electrically conductive layer to include first and second regions of relatively low resistance and a relatively high-resistance passageway comprises sizing relatively high-resistance passageway to enable sufficient current flow and energy dissipation to heat the moveable micromachined member to a temperature of at least 300 degrees Celsius.

5. The method of claim 1 wherein forming the moveable micromachined member and first and second mechanical structures comprises sizing the first and second electrical interconnect layers and the first electrically conductive layer to convey a joule-heating current sufficient to heat the moveable micromachined member to a temperature of at least 300 degrees Celsius.

6. The method of claim 1 wherein forming the moveable MEMS structure comprises forming at least one of the first and second electrically conductive layers from single-crystal silicon sufficiently doped to enable electrical conductivity.

7. The method of claim 1 wherein forming the moveable MEMS structure having the piezoelectric insulating layer comprises forming the piezoelectric insulating layer at least in part from aluminum nitride.

8. The method of claim 1 wherein forming the first and second mechanical structures comprises forming the first and second mechanical structures to include respective third and fourth electrical interconnect layers coupled in series, with the second electrically conductive layer of the moveable micromachined member and each other, between the first and second electrical terminals.

9. The method of claim 1 further comprising encapsulating the moveable micromachined member and at least portions of the first and second mechanical structures within a vacuum cavity.

10. The method of claim 1 wherein forming the moveable micromachined member comprises forming a MEMS resonator.

Assignees

• SiTime Coporation
• Sitime Corp

Inventors

• Doll Joseph C
• Miller Nicholas
• Grosjean Charles I
• Hagelin Paul M
• Hill Ginel C

Classifications

• H03H3/0077 Primary

  by tuning of resonance frequency · CPC title

• H03H9/02448

  of temperature influence · CPC title

• H03H2003/027

  the resonators or networks being of the microelectro-mechanical [MEMS] type · CPC title

• H03H9/2463

  Clamped-clamped beam resonators · CPC title

• H03H9/1057

  for microelectro-mechanical devices · CPC title