Microelectromechanical resonator

US9712128B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9712128-B2
Application numberUS-201615186510-A
CountryUS
Kind codeB2
Filing dateJun 19, 2016
Priority dateFeb 9, 2014
Publication dateJul 18, 2017
Grant dateJul 18, 2017

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

In a MEMS device having a substrate and a moveable micromachined member, a mechanical structure secures the moveable micromachined member to the substrate, thermally isolates the moveable micromachined member from the substrate and provides a conduction path to enable heating of the moveable micromachined member to a temperature of at least 300 degrees Celsius.

First claim

Opening claim text (preview).

What is claimed is: 1. A microelectromechanical system (MEMS) resonator comprising: a layer of degenerately-doped polycrystalline silicon; a layer of degenerately-doped single-crystal silicon; and a layer of piezoelectric material sandwiched between the degenerately-doped polycrystalline silicon layer and the degenerately-doped single-crystal silicon layer. 2. The MEMS resonator of claim 1 wherein the layer of piezoelectric material comprises aluminum nitride. 3. The MEMS resonator of claim 1 wherein the degenerately-doped single-crystal silicon layer is at least 10 times thicker than the layer of piezoelectric material. 4. The MEMS resonator of claim 1 wherein the layers of degenerately-doped polycrystalline silicon, degenerately-doped single-crystal silicon and piezoelectric material form a resonator body and one or more tethering structures that mechanically couple the resonator body to anchoring points within a field area. 5. The MEMS resonator of claim 4 wherein the layer of degenerately-doped polycrystalline silicon comprises a first electrode within the resonator body and a first conductive path within each of the one or more tethering structures to enable the first electrode to be electrically coupled, through at least one of the tethering structures, to a first node of a voltage source external to the resonator. 6. The MEMS resonator of claim 5 wherein the layer of degenerately-doped single-crystal silicon comprises a second electrode within the resonator body and a second conductive path within each of the one or more tethering structures to enable the second electrode to be electrically coupled to a second node of the voltage source external to the resonator such that a voltage generated by the voltage source yields an electrostatic potential across the layer of piezoelectric material. 7. The MEMS resonator of claim 5 wherein the one or more tethering structures comprise at least two tethering structures that enable the first electrode to be coupled between the first node of the voltage source external to the resonator and a second node of the voltage source external to the resonator such that a potential difference is applied across the first electrode. 8. The MEMS resonator of claim 5 wherein the first electrode is patterned to form a resistive region with sufficient resistance to heat the resonator body to a temperature of at least 300 degrees Celsius when a current is conducted through the resistive region. 9. The MEMS resonator of claim 5 wherein the one or more tethering structures thermally isolate the resonator body from the anchoring points and exhibit sufficient electrical resistivity to enable heating of the resonator body to a temperature of at least 300 degrees Celsius when a joule heating current is conducted through the one or more tethering structures. 10. The MEMS resonator of claim 5 wherein the one or more tethering structures comprise two tethering structures coupled to the first electrode at opposite sides of the resonator body.

Assignees

Inventors

Classifications

  • by application of heat from a heat source · CPC title

  • H03H9/125Primary

    Driving means, e.g. electrodes, coils · CPC title

  • for microelectro-mechanical devices · CPC title

  • Dog-bone-like structure, i.e. the elongated part of the "bone" is doubly clamped · CPC title

  • the resonators or networks being of the microelectro-mechanical [MEMS] type · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US9712128B2 cover?
In a MEMS device having a substrate and a moveable micromachined member, a mechanical structure secures the moveable micromachined member to the substrate, thermally isolates the moveable micromachined member from the substrate and provides a conduction path to enable heating of the moveable micromachined member to a temperature of at least 300 degrees Celsius.
Who is the assignee on this patent?
SiTime Coporation, Sitime Corp
What technology area does this patent fall under?
Primary CPC classification H03H9/125. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jul 18 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).