Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer

Patent metadata

Field	Value
Publication number	US-11901175-B2
Application number	US-202217859929-A
Country	US
Kind code	B2
Filing date	Jul 7, 2022
Priority date	Mar 8, 2019
Publication date	Feb 13, 2024
Grant date	Feb 13, 2024

Abstract

A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes treating the first material, and then selectively depositing a layer comprising silicon nitride on the second material relative to the first material. Exemplary methods can further include treating the deposited silicon nitride.

First claim

What is claimed is:

1. A structure, comprising:
a substrate comprising an outer surface;
a first material disposed on the outer surface of the substrate comprising titanium oxide;
a second material disposed on the outer surface of the substrate comprising at least one of a Group IV nitride or a metal nitride; and
a silicon nitride layer selectively disposed on the second material relative to the first material.

2. The structure of claim 1 , wherein the second material comprises the Group IV nitride, and wherein the Group IV nitride comprises silicon nitride.

3. The structure of claim 1 , wherein the second material comprises the metal nitride, wherein the metal nitride comprises titanium nitride.

4. The structure of claim 1 , wherein the first material is deactivated to prevent deposition thereon.

5. The structure of claim 4 , wherein the first material comprises —OH terminals on a surface of the first material to prevent deposition thereon.

6. The structure of claim 1 , wherein the silicon nitride layer is densified.

7. A structure, comprising:
a substrate comprising an outer surface;
a first material disposed on the outer surface of the substrate comprising at least one of silicon oxide or titanium oxide;
a second material disposed on the outer surface of the substrate comprising titanium nitride; and
a silicon nitride layer selectively disposed on the second material relative to the first material.

8. The structure of claim 7 , wherein the first material is deactivated to prevent deposition thereon.

9. The structure of claim 8 , wherein the first material comprises —OH terminals on a surface of the first material to prevent deposition thereon.

10. The structure of claim 7 , wherein the silicon nitride layer is densified.

11. The structure of claim 7 , wherein the substrate comprises at least one of a Group IV semiconductor material, a Group III-V semiconductor, or a Group II-VI semiconductor.

12. A structure, comprising:
a substrate comprising an outer surface;
a first material disposed on the outer surface of the substrate comprising —OH terminals on a surface of the first material;
a second material disposed on the outer surface of the substrate, wherein the second material is different than the first material; and
a silicon nitride layer selectively disposed on the second material relative to the first material.

13. The structure of claim 12 , wherein the first material comprises an oxide.

14. The structure of claim 13 , wherein the first material comprises at least one of a Group IV oxide or a metal oxide.

15. The structure of claim 12 , wherein the second material comprises a nitride.

16. The structure of claim 15 , wherein the second material comprises at least one of a Group IV nitride or a metal nitride.

17. The structure of claim 12 , wherein the surface of the first material is deactivated to prevent deposition thereon via the —OH terminals.

18. The structure of claim 12 , wherein the silicon nitride layer is densified.

Assignees

• Asm Ip Holding Bv

Inventors

• Shero Eric James
• Ma Paul
• Sharma Bed Prasad
• Swaminathan Shankar

Classifications

• H10P72/0461

  characterised by the presence of two or more transfer chambers · CPC title

• H10P14/6681

  the precursor containing a compound comprising Si · CPC title

• H10P72/7604

  the wafers being placed on a susceptor, stage or support · CPC title

• H10P14/6532

  by exposure to a plasma · CPC title

• H10P14/6514 Primary

  by exposure to a plasma · CPC title