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Atomic layer deposition lithography
US8932802B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8932802-B2 |
| Application number | US-201313762446-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 8, 2013 |
| Priority date | Feb 21, 2012 |
| Publication date | Jan 13, 2015 |
| Grant date | Jan 13, 2015 |
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Abstract
Official abstract text for this publication.
Methods and apparatus for performing an atomic layer deposition lithography process are provided in the present disclosure. In one embodiment, a method for forming features on a material layer in a device includes pulsing a first reactant gas mixture to a surface of a substrate disposed in a processing chamber to form a first monolayer of a material layer on the substrate surface, directing an energetic radiation to treat a first region of the first monolayer, and pulsing a second reactant gas mixture to the substrate surface to selectively form a second monolayer on a second region of the first monolayer.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method for forming features on a compound layer in a device, comprising: (a) pulsing a first reactant gas mixture to a surface of a substrate disposed in a processing chamber to form a first monolayer of a compound layer on the substrate surface; (b) directing an energetic radiation to treat a first region of the first monolayer; (c) removing the first monolayer from the first region; and (d) pulsing a second reactant gas mixture to the substra…
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Classifications
- G03F7/0035Primary
Physics · mapped topic
- G03F7/16Primary
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
- H10P76/2041Primary
Electricity · mapped topic
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- What does patent US8932802B2 cover?
- Methods and apparatus for performing an atomic layer deposition lithography process are provided in the present disclosure. In one embodiment, a method for forming features on a material layer in a device includes pulsing a first reactant gas mixture to a surface of a substrate disposed in a processing chamber to form a first monolayer of a material layer on the substrate surface, directing an …
- Who is the assignee on this patent?
- Applied Materials Inc
- What technology area does this patent fall under?
- Primary CPC classification G03F7/0035. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Jan 13 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).