Magnetic memory cells with low switching current density

Patent metadata

Field	Value
Publication number	US-9542987-B2
Application number	US-201615012798-A
Country	US
Kind code	B2
Filing date	Feb 1, 2016
Priority date	Feb 2, 2015
Publication date	Jan 10, 2017
Grant date	Jan 10, 2017

Abstract

Memory cells and methods for forming a memory cell are disclosed. The memory cell includes a substrate defined with a memory cell region. A cell selector unit is defined on the substrate. The cell selector unit includes at least one select transistor. A storage element which includes a magnetic tunnel junction (MTJ) element is coupled to the selector unit. The MTJ element includes a free layer, a fixed layer and a tunnel barrier sandwiched between the fixed and free layers. A spin-orbit-torque (SOT) layer is coupled to the selector unit and is in direct contact with the free layer. A strain induced layer is coupled to a digital line (DL) and is in direct contact with the SOT layer. When the DL is activated, an electric field applied to the strain induced layer induces a strain on the SOT layer.

First claim

What is claimed is:

1. A memory cell comprising:
a substrate defined with a memory cell region;
a cell selector unit defined on the substrate, wherein the cell selector unit comprises at least one select transistor;
a storage element which comprises a magnetic tunnel junction (MTJ) element coupled to the selector unit, wherein the MTJ element comprises a free layer, a fixed layer and a tunnel barrier sandwiched between the fixed and free layers;
a spin-orbit-torque (SOT) layer coupled to the selector unit and is in direct contact with the free layer; and
a strain induced layer coupled to a digital line (DL) and in direct contact with the SOT layer, wherein when the DL is activated, an electric field applied to the strain induced layer induces a strain on the SOT layer.

2. The memory cell of claim 1 wherein the SOT layer comprises heavy metal material and the strain induced layer comprises a piezo electric or a ferroelectric material.

3. The memory cell of claim 1 wherein:
the cell selector unit comprises first and second select transistors, wherein a select transistor comprises a gate and first and second source/drain (S/D) regions disposed adjacent to first and second sides of the gate;
the first select transistor serves as a read select transistor and the second select transistor serves as a write select transistor; and
the first S/D regions of the first and second select transistors serve as drain regions and the second S/D regions of the first and second select transistors serve as source regions.

4. The memory cell of claim 3 wherein:
a gate of a select transistor serves as a select line (SL) and is a gate conductor which traverses along a SL direction which is parallel to the DL;
the source region of the first select transistor is coupled to a source line (SrL) which traverses along a direction perpendicular to the SL direction;
the source region of the second select transistor is coupled to a write line (WL), wherein the WL and SrL are parallel to each other; and
the drain regions of the first and second select transistors are electrically coupled to the SOT layer.

5. The memory cell of claim 4 wherein the MTJ element is coupled to a read line (RL) disposed over the MTJ element and traverses along a direction parallel to the WL and SrL.

6. The memory cell of claim 5 wherein the WL and SrL are disposed in a first metal level and the DL is disposed in a second metal level above the first metal level.

7. The memory cell of claim 1 wherein a footprint of the SOT layer is sufficient to accommodate the storage element and a footprint of the strain induced layer is larger than a footprint of the storage element.

8. The memory cell of claim 1 wherein:
the cell selector unit comprises one select transistor, wherein the select transistor comprises a gate and first and second source/drain (S/D) regions disposed adjacent to first and second sides of the gate; and
the first S/D region of the select transistor serves as a drain region and the second S/D region of the select transistor serves as a source region.

9. The memory cell of claim 8 wherein:
the gate of the select transistor serves as a select line (SL) and is a gate conductor which traverses along a SL direction which is parallel to the DL;
the source region of the select transistor is coupled to a source line (SrL) which traverses along a direction perpendicular to the SL direction; and
the drain region of the select transistor is electrically coupled to the SOT layer.

10. The memory cell of claim 9 wherein the MTJ element is coupled to a read line (RL) disposed over the MTJ element, and the SOT layer is coupled to a write line (WL), wherein the WL and RL traverse along a direction parallel to the SrL.

11. The memory cell of claim 10 wherein the SrL is disposed in a first metal level, the DL is disposed in a second metal level above the first metal level, and the RL and WL are disposed in a third metal level above the second metal level.

12. The memory cell of claim 11 wherein the SOT layer comprises a L-shaped layout to offset the WL and RL.

13. A method of operating a memory cell comprising:
providing a memory cell comprising
a substrate defined with a memory cell region,
a cell selector unit defined on the substrate, wherein the cell selector unit comprises at least one select transistor,
a storage element which comprises a magnetic tunnel junction (MTJ) element coupled to the selector unit, wherein the MTJ element comprises a free layer, a fixed layer and a tunnel barrier sandwiched between the fixed and free layers,
a spin-orbit-torque (SOT) layer coupled to the selector unit and is in direct contact with the free layer, and
a strain induced layer coupled to a digital line (DL) and in direct contact with the SOT layer; and

performing a read operation or write operation with the memory cell, wherein when a write operation is performed, a write path is formed through the SOT layer and the DL is activated, an electric field to applied to the strain induced layer induces a strain on the SOT layer which reduces magnetic anisotropy of the free layer that is in direct contact with the SOT layer.

14. A method of forming a memory cell comprising:
providing a substrate defined with a memory cell region;
forming a cell selector unit on the substrate, wherein forming the cell selector unit comprises forming at least one select transistor;
forming a storage element which comprises a magnetic tunnel junction (MTJ) element coupled to the selector unit, wherein the MTJ element comprises a free layer, a fixed layer and a tunnel barrier sandwiched between the fixed and free layers;
forming a spin-orbit-torque (SOT) layer and coupling the SOT layer to the selector unit, wherein the SOT layer is formed below and in direct contact with the free layer; and
forming a strain induced layer and coupling the strain induced layer to a digital line (DL) and in direct contact with the SOT layer, wherein when the DL is activated, an electric field applied to the strain induced layer induces a strain on the SOT layer.

15. The method of claim 14 wherein forming the at least one select transistor comprises forming first and second select transistors on the substrate.

16. The method of claim 15 wherein forming the first and second select transistors comprises:
forming gate layers which comprise a gate dielectric layer and a gate electrode layer over the substrate;
patterning the gate layers to form the first and second gates of the select transistors; and
implanting first polarity type dopants to form first and second heavily doped S/D regions adjacent to first and second sides of the gates of the select transistors.

17. The method of claim 16 comprising:
forming a pre-metal dielectric (PMD) layer over the first and second select transistors;
forming metal lines and interconnect pads over the PMD layer, wherein the metal lines comprise a source line (SrL) and a write line (WL), wherein the SrL and WL are parallel to each other and traverse along a direction perpendicular to direction of the gates;
coupling the second S/D region of the first selector transistor to the SrL; and
coupling the second S/D region of the second select transistor to the WL.

18. The method of claim 17 comprising:
forming a dielectric layer over the PMD layer;
forming a metal line and interconnect pads in the dielectric layer, wherein the metal line comprises the DL which traverses along a direction parallel to the gates;
forming a storage dielectric layer over the dielectric layer and DL,

Assignees

• Globalfoundries Sg Pte Ltd

Inventors

• Naik Vinayak Bharat
• Toh Eng Huat
• Quek Kiok Boone Elgin

Classifications

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• G11C11/1675

  Writing or programming circuits or methods · CPC title

• G11C11/18

  using Hall-effect devices · CPC title

• G11C11/15

  using multiple magnetic layers (G11C11/155 takes precedence) · CPC title

• H01L43/02

  Electricity · mapped topic