Spin-orbit torque magnetization rotational element

Patent metadata

Field	Value
Publication number	US-10193061-B2
Application number	US-201715793523-A
Country	US
Kind code	B2
Filing date	Oct 25, 2017
Priority date	Oct 27, 2016
Publication date	Jan 29, 2019
Grant date	Jan 29, 2019

Abstract

A spin-orbit torque magnetization rotational element includes: a ferromagnetic metal layer, a magnetization direction of which is configured to be changed; a spin-orbit torque wiring bonded to the ferromagnetic metal layer; and an interfacial distortion supply layer bonded to a surface of the spin-orbit torque wiring on a side opposite to the ferromagnetic metal layer.

First claim

What is claimed is:

1. A spin-orbit torque magnetization rotational element comprising:
a ferromagnetic metal layer, a magnetization direction of which is configured to be changed;
a spin-orbit torque wiring bonded to the ferromagnetic metal layer; and
an interfacial distortion supply layer bonded to a surface of the spin-orbit torque wiring on a side opposite to the ferromagnetic metal layer,
wherein a degree of lattice mismatching between the spin-orbit torque wiring and the interfacial distortion supply layer is 5% or more.

2. The spin-orbit torque magnetization rotational element according to claim 1 , wherein
the spin-orbit torque wiring has an fcc crystal structure, and
the interfacial distortion supply layer has any one of a NaCl structure, a corundum structure and a rutile structure.

3. The spin-orbit torque magnetization rotational element according to claim 1 , wherein
the spin-orbit torque wiring has a bcc crystal structure, and
the interfacial distortion supply layer has any one of a NaCl structure, a corundum structure, a rutile structure and a spinel structure.

4. The spin-orbit torque magnetization rotational element according to claim 1 , wherein
the spin-orbit torque wiring has a hcp structure, and
the interfacial distortion supply layer has a corundum structure.

5. The spin-orbit torque magnetization rotational element according to claim 1 , wherein a thickness of the spin-orbit torque wiring is twice or less of a spin diffusion length of a material constituting the spin-orbit wiring.

6. The spin-orbit torque magnetization rotational element according to claim 5 , wherein the interfacial distortion supply layer is a conductor having a thickness of 1 nm or less.

7. The spin-orbit torque magnetization rotational element according to claim 1 , further comprising, a nonmagnetic layer and a fixed layer, in which a magnetization direction is fixed, on a surface of the ferromagnetic metal layer on a side opposite to the spin-orbit torque wiring.

8. A magnetic memory using the spin-orbit torque magnetization rotational element according to claim 1 .

9. The spin-orbit torque magnetization rotational element according to claim 1 , wherein the interfacial distortion supply layer is an insulator.

10. The spin-orbit torque magnetization rotational element according to claim 1 , wherein the interfacial distortion supply layer is a conductor having a thickness of 1 nm or less.

11. A spin-orbit torque magnetization rotational element comprising:
a ferromagnetic metal layer, a magnetization direction of which is configured to be changed;
a spin-orbit torque wiring bonded to the ferromagnetic metal layer; and
an interfacial distortion supply layer bonded to a surface of the spin-orbit torque wiring on a side opposite to the ferromagnetic metal layer,
wherein a degree of lattice mismatching between the spin-orbit torque wiring and the interfacial distortion supply layer is 5% or more and 10% or less.

12. The spin-orbit torque magnetization rotational element according to claim 11 , wherein
the spin-orbit torque wiring has an fcc crystal structure, and
the interfacial distortion supply layer has any one of a NaCl structure, a corundum structure and a rutile structure.

13. The spin-orbit torque magnetization rotational element according to claim 11 , wherein
the spin-orbit torque wiring has a bcc crystal structure, and
the interfacial distortion supply layer has any one of a NaCl structure, a corundum structure, a rutile structure and a spinel structure.

14. The spin-orbit torque magnetization rotational element according to claim 11 , wherein
the spin-orbit torque wiring has a hcp structure, and
the interfacial distortion supply layer has a corundum structure.

15. The spin-orbit torque magnetization rotational element according to claim 11 , wherein a thickness of the spin-orbit torque wiring is twice or less of a spin diffusion length of a material constituting the spin-orbit wiring.

16. The spin-orbit torque magnetization rotational element according to claim 11 , wherein the interfacial distortion supply layer is an insulator.

17. The spin-orbit torque magnetization rotational element according to claim 11 , wherein the interfacial distortion supply layer is a conductor having a thickness of 1 nm or less.

18. The spin-orbit torque magnetization rotational element according to claim 11 , further comprising, a nonmagnetic layer and a fixed layer, in which a magnetization direction is fixed, on a surface of the ferromagnetic metal layer on a side opposite to the spin-orbit torque wiring.

19. A spin-orbit torque magnetization rotational element comprising:
a ferromagnetic metal layer, a magnetization direction of which is configured to be changed;
a spin-orbit torque wiring bonded to the ferromagnetic metal layer; and
an interfacial distortion supply layer bonded to a surface of the spin-orbit torque wiring on a side opposite to the ferromagnetic metal layer,
wherein the interfacial distortion supply layer is an insulator.

20. The spin-orbit torque magnetization rotational element according to claim 19 , further comprising, a nonmagnetic layer and a fixed layer, in which a magnetization direction is fixed, on a surface of the ferromagnetic metal layer on a side opposite to the spin-orbit torque wiring.

21. A spin-orbit torque magnetization rotational element comprising:
a ferromagnetic metal layer, a magnetization direction of which is configured to be changed;
a spin-orbit torque wiring bonded to the ferromagnetic metal layer; and
an interfacial distortion supply layer bonded to a surface of the spin-orbit torque wiring on a side opposite to the ferromagnetic metal layer,
wherein the interfacial distortion supply layer is a conductor having a thickness of 1 nm or less.

22. The spin-orbit torque magnetization rotational element according to claim 21 , further comprising, a nonmagnetic layer and a fixed layer, in which a magnetization direction is fixed, on a surface of the ferromagnetic metal layer on a side opposite to the spin-orbit torque wiring.

Assignees

• Tdk Corp

Inventors

• SHIOKAWA Yohei
• Sasaki Tomoyuki
• Oikawa Tohru

Classifications

• H01F10/324

  Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer · CPC title

• H01F10/329

  Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect · CPC title

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H01L43/10

  Electricity · mapped topic

• H01L43/06

  Electricity · mapped topic