Spin-orbit torque magnetic random access memory

Patent metadata

Field	Value
Publication number	US-9929210-B2
Application number	US-201715435547-A
Country	US
Kind code	B2
Filing date	Feb 17, 2017
Priority date	Apr 19, 2016
Publication date	Mar 27, 2018
Grant date	Mar 27, 2018

Abstract

A spin-orbit torque magnetic random access memory includes a substrate, and an SOT memory cell disposed on the substrate and including a magnetic free layer including a ferromagnetic first metal layer, an anti-ferromagnetic second metal layer, and a third metal layer for generating spin-Hall effect. The first metal layer has a thickness ranging from 0.5 nm to 1.5 nm and exhibits perpendicular magnetic anisotropy (PMA). The second metal layer has a thickness greater than 6 nm for providing an exchange bias field. The second metal layer is an IrMn layer not undergone out-of-plane magnetic annealing or coating and exhibiting no PMA. The magnetic free layer has a coercive magnetic field (H c ) upon reaching the critical current density, and |H EB |>|H c |.

First claim

What is claimed is:

1. A spin-orbit torque magnetic random access memory, comprising:
a substrate;
an SOT memory cell disposed on the substrate and including a magnetic free layer, wherein the magnetic free layer includes a ferromagnetic first metal layer, an anti-ferromagnetic second metal layer contacting the first metal layer, and a third metal layer contacting the first metal layer for generating the spin-Hall effect,
wherein the first metal layer has a thickness ranging from 0.5 nm to 1.5 nm and exhibits perpendicular magnetic anisotropy,
wherein the second metal layer has a thickness of greater than 6 nm for providing an exchange bias field upon an external magnetic field and an electric pulse being provided along a hard axis of the first metal layer reaching a critical current density,
wherein the second metal layer is an IrMn layer which is not undergone out-of-plane magnetic annealing or out-of-plane magnetic coating and exhibits no perpendicular magnetic anisotropy,
wherein the magnetic free layer has a coercive magnetic field upon reaching the critical current density, and |H EB |>|H c |.

2. The SOT-MRAM of claim 1 , wherein the thickness of the first metal layer is greater than or equal to 0.8 nm and less than 1.2 nm, and the thickness of the second metal layer is greater than or equal to 8 nm and less than 15 nm.

3. The SOT-MRAM of claim 2 , wherein:
the first metal layer includes a first metal selected from the group consisting of Co, Fe, Ni, and combinations thereof;
the third metal layer includes a second metal, or a third metal doped with a fourth metal;
the second metal is selected from the group consisting of Pd, Pt, Ta, Mo, W, and combinations thereof;
the third metal is selected from the group consisting of Cu, Pt, W and combinations thereof; and
the fourth metal is selected from the group consisting of Ir, Pt, W, Bi and combinations thereof.

4. The SOT-MRAM of claim 3 , wherein the first metal layer is made of Co, and the third metal layer is made of Pt.

5. The SOT-MRAM of claim 4 , wherein the third metal layer has a thickness greater than or equal to 1.5 nm and less than or equal to 8 nm.

6. The SOT-MRAM of claim 5 , wherein the thickness of the third metal layer is greater than or equal to 1.5 nm and less than or equal to 3.0 nm.

Assignees

• Univ Nat Tsing Hua

Inventors

• Lai Chih-Huang
• Tsai Ming-Han
• Huang Kuo-Feng

Classifications

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H01L43/06

  Electricity · mapped topic

• H01L43/04

  Electricity · mapped topic

• H01L27/222 Primary

  Electricity · mapped topic

• H01L43/08

  Electricity · mapped topic