Transistor and display device having the same
US-10546959-B2 · Jan 28, 2020 · US
Doped metal oxide semiconductor and thin-film transistor made therefrom and its application
US11894467B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11894467-B2 |
| Application number | US-201916678116-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 8, 2019 |
| Priority date | Sep 18, 2019 |
| Publication date | Feb 6, 2024 |
| Grant date | Feb 6, 2024 |
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- Title
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Abstract
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The present application discloses a doped metal oxide semiconductor which is an indium tin oxide or indium tin zinc oxide semiconductor doped with a rare earth oxide. Even at a small doping amount, the oxygen vacancies could be suppressed as well as the mobility be maintained; critically, the thin-films made thereof can avoid the influence of light on I-V characteristics and stability, which results in great improvement of the stability under illumination of metal oxide semiconductor devices. The present application also discloses the thin-film transistors made thereof the doped metal oxide semiconductor and its application.
First claim
Opening claim text (preview).
What is claimed is: 1. A doped metal oxide semiconductor, characterized in that the doped metal oxide semiconductor is a rare-earth oxide doped metal oxide; in which the metal oxide is indium tin oxide having an In:Sn molar ratio of 2:1 to 5:1 or indium tin zinc oxide having molar ratios of In, Sn, and Zn in ranges of: 0.2≤In/(In+Sn+Zn)≤0.8, 0.2≤Sn/(In+Sn+Zn)≤0.4, 0<Zn/(In+Sn+Zn)≤0.5; the rare-earth oxide comprises ytterbium oxide; an uniform doping molar ratios of ytterbium to the indium and tin or indium and tin and zinc of the metal oxide is in a range from 0.1:1 to 0.4:1; there are recombination centers for photo-induced carriers generated in the doped metal oxide semiconductor. 2. The doped metal oxide semiconductor of claim 1 , wherein the doping molar ratio of ytterbium to the indium and tin or indium and tin and zinc of the metal oxide is in a range from 0.20:1 to 0.40:1.
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Classifications
characterised by the gate electrodes · CPC title
characterised by the materials · CPC title
characterised by the shapes, relative sizes or dispositions of the gate electrodes · CPC title
comprising silicon, e.g. amorphous silicon or polysilicon · CPC title
Subject matter not provided for in other groups of this subclass · CPC title
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- What does patent US11894467B2 cover?
- The present application discloses a doped metal oxide semiconductor which is an indium tin oxide or indium tin zinc oxide semiconductor doped with a rare earth oxide. Even at a small doping amount, the oxygen vacancies could be suppressed as well as the mobility be maintained; critically, the thin-films made thereof can avoid the influence of light on I-V characteristics and stability, which re…
- Who is the assignee on this patent?
- Univ South China Tech
- What technology area does this patent fall under?
- Primary CPC classification H10D30/6756. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 06 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).