Semiconductor device

Patent metadata

Field	Value
Publication number	US-10134852-B2
Application number	US-201313920442-A
Country	US
Kind code	B2
Filing date	Jun 18, 2013
Priority date	Jun 29, 2012
Publication date	Nov 20, 2018
Grant date	Nov 20, 2018

Abstract

In a transistor including an oxide semiconductor film, movement of hydrogen and nitrogen to the oxide semiconductor film is suppressed. Further, in a semiconductor device using a transistor including an oxide semiconductor film, a change in electrical characteristics is suppressed and reliability is improved. A transistor including an oxide semiconductor film and a nitride insulating film provided over the transistor are included, and an amount of hydrogen molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 5×10 21 molecules/cm 3 , preferably less than or equal to 3×10 21 molecules/cm 3 , more preferably less than or equal to 1×10 21 molecules/cm 3 , and an amount of ammonia molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 1×10 22 molecules/cm 3 , preferably less than or equal to 5×10 21 molecules/cm 3 , more preferably less than or equal to 1×10 21 molecules/cm 3 .

First claim

The invention claimed is:

1. A semiconductor device comprising:
a gate electrode;
an oxide semiconductor film overlapping with a part of the gate electrode with a gate insulating film interposed therebetween;
a pair of electrodes in contact with the oxide semiconductor film; and
a nitride insulating film over the oxide semiconductor film,
wherein in the case where the nitride insulating film is analyzed by thermal desorption spectroscopy, hydrogen molecules less than 5×10 21 molecules/cm 3 and ammonia molecules less than 1×10 22 molecules/cm 3 are released.

2. The semiconductor device according to claim 1 , wherein the pair of electrodes is interposed between the gate insulating film and the oxide semiconductor film.

3. The semiconductor device according to claim 1 , wherein the pair of electrodes is interposed between the oxide semiconductor film and the nitride insulating film.

4. The semiconductor device according to claim 1 , wherein a planarization film is over the nitride insulating film.

5. The semiconductor device according to claim 4 , wherein the planarization film is an organic resin.

6. The semiconductor device according to claim 1 , wherein an oxide insulating film is interposed between the oxide semiconductor film and the nitride insulating film.

7. The semiconductor device according to claim 1 , wherein an oxide insulating film whose oxygen content is in excess of that in the stoichiometric composition is interposed between the oxide semiconductor film and the nitride insulating film.

8. The semiconductor device according to claim 6 , wherein the oxide insulating film is silicon oxide or silicon oxynitride.

9. The semiconductor device according to claim 1 , wherein the nitride insulating film is silicon nitride or silicon nitride oxide.

10. A semiconductor device comprising:
an oxide semiconductor film;
a pair of electrodes in contact with the oxide semiconductor film;
a gate insulating film over the oxide semiconductor film; and
a gate electrode over the gate insulating film,
wherein the gate insulating film comprises a nitride insulating film, and
wherein in the case where the nitride insulating film is analyzed by thermal desorption spectroscopy, hydrogen molecules less than 5×10 21 molecules/cm 3 and ammonia molecules less than 1×10 22 molecules/cm 3 are released.

11. The semiconductor device according to claim 10 , wherein the pair of electrodes is interposed between the oxide semiconductor film and the nitride insulating film.

12. The semiconductor device according to claim 10 , wherein an oxide insulating film is interposed between the oxide semiconductor film and the nitride insulating film.

13. The semiconductor device according to claim 10 , wherein an oxide insulating film whose oxygen content is in excess of that in the stoichiometric composition is interposed between the oxide semiconductor film and the nitride insulating film.

14. The semiconductor device according to claim 12 , wherein the oxide insulating film is silicon oxide or silicon oxynitride.

15. The semiconductor device according to claim 10 , wherein the nitride insulating film is silicon nitride or silicon nitride oxide.

16. A semiconductor device comprising:
a gate electrode;
an oxide semiconductor film overlapping with a part of the gate electrode with a gate insulating film interposed therebetween;
a pair of electrodes in contact with the oxide semiconductor film; and
an insulating film over the oxide semiconductor film,
wherein at least one of the gate insulating film and the insulating film comprises a nitride insulating film from which hydrogen molecules less than 1×10 21 molecules/cm 3 and ammonia molecules less than 1×10 21 molecules/cm 3 are released when analyzed by thermal desorption spectroscopy.

17. The semiconductor device according to claim 16 , wherein the pair of electrodes is interposed between the gate insulating film and the oxide semiconductor film.

18. The semiconductor device according to claim 16 , wherein the oxide semiconductor film is interposed between the pair of electrodes and the gate insulating film.

19. The semiconductor device according to claim 16 , wherein the nitride insulating film is silicon nitride or silicon nitride oxide.

Assignees

• Semiconductor Energy Lab

Inventors

• Sasaki Toshinari
• Hamochi Takashi
• Miyamoto Toshiyuki
• Nomura Masafumi
• Koezuka Junichi
• Okazaki Kenichi

Classifications

• H01L29/247 Primary

  Electricity · mapped topic

• H01L29/78606

  Electricity · mapped topic

• H01L29/7869

  Electricity · mapped topic

• H10D62/875

  being semiconductor metal oxide, e.g. InGaZnO (Group II-VI materials H10D62/86; Group I-VI materials H10D62/871; Pb compounds or alloys H10D62/874) · CPC title

• H10D30/6704 Primary

  having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device · CPC title