Method and apparatuses for disposing of excess material of a photolithographic mask

Patent metadata

Field	Value
Publication number	US-11874598-B2
Application number	US-201916700180-A
Country	US
Kind code	B2
Filing date	Dec 2, 2019
Priority date	Jul 21, 2017
Publication date	Jan 16, 2024
Grant date	Jan 16, 2024

Abstract

The present application relates to a method for disposing of excess material of a photolithographic mask, wherein the method comprises the following steps: (a) enlarging a surface of the excess material; (b) displacing the enlarged excess material on the photolithographic mask using at least one first probe of a scanning probe microscope; and (c) removing the displaced enlarged excess material from the photolithographic mask.

First claim

What is claimed is:

1. A method for disposing of excess material of a photolithographic mask, comprising the following steps:
a. enlarging a surface of the excess material;
b. displacing the enlarged excess material from a first location on the photolithographic mask to a second location on the photolithographic mask using at least one first probe of a scanning probe microscope;
c. removing the displaced enlarged excess material from the photolithographic mask; and
d. monitoring displacing and/or removing the enlarged excess material using a particle beam microscope.

2. The method of claim 1 , wherein enlarging the surface of the excess material is carried out by use of a particle beam-induced process.

3. The method of claim 1 , wherein displacing the enlarged excess material comprises causing the at least one first probe of the scanning probe microscope to interact with the enlarged excess material and/or carrying out at least one relative movement between the at least one first probe and the photolithographic mask.

4. The method of claim 1 , wherein displacing the enlarged excess material comprises displacing the enlarged excess material from a transmissive or a reflective region of the photolithographic mask into a region of an absorbing pattern element of the photolithographic mask.

5. The method of claim 1 , furthermore comprising the following steps: producing a temporary auxiliary structure and displacing the enlarged excess material onto the temporary auxiliary structure.

6. The method of claim 1 , wherein removing the displaced enlarged excess material from the photolithographic mask is carried out by using the at least one first probe of the scanning probe microscope.

7. The method of claim 6 , wherein the at least one first probe electrostatically interacts with the displaced enlarged excess material for removing the displaced enlarged excess material.

8. The method of claim 6 , wherein removing the displaced enlarged excess material further comprises the step: establishing a mechanical connection between the at least one first probe and the displaced enlarged excess material by depositing material on the at least one first probe and/or the displaced enlarged excess material.

9. The method of claim 8 , wherein removing the displaced enlarged excess material further comprises the step: separating the mechanical connection between the at least one first probe and the displaced enlarged excess material by use of a particle beam-induced etching process.

10. The method of claim 1 , wherein displacing the enlarged excess material comprises: tilting the at least one first probe relative to the longitudinal axis thereof for the purpose of localizing and/or for the purpose of displacing the enlarged excess material.

11. The method of claim 1 , wherein the at least one first probe comprises a probe arrangement comprising a first probe and a second probe and furthermore comprises the following step: localizing the excess material using the first probe of the probe arrangement and displacing the localized enlarged excess material using the second probe of the probe arrangement of the scanning probe microscope.

12. The method of claim 1 , wherein removing the enlarged displaced excess material is carried out by use of a cleaning process for the photolithographic mask.

13. A computer-readable storage device storing a computer program comprising instructions which, when they are executed by a computer system, cause the computer system to instruct an apparatus for disposing of excess material of a photolithographic mask to carry out the method steps of claim 1 ; wherein the apparatus for disposing of excess material of the photolithographic mask comprises:
a. at least one means which is configured to enlarge a surface of the excess material;
b. at least one probe of a scanning probe microscope which is configured to displace the enlarged excess material from a first location on the photolithographic mask to a second location on the photolithographic mask;
c. at least one means which is configured to remove the displaced enlarged excess material from the photolithographic mask; and
d. a particle beam microscope which is configured to monitor displacing and/or removing the enlarged excess material.

14. The computer-readable storage device of claim 13 , further comprising instructions which, when they are executed by the computer system, cause the computer system to instruct the apparatus for disposing of excess material of the photolithographic mask to carry out the method steps of claim 4 .

15. The computer-readable storage device of claim 13 , further comprising instructions which, when they are executed by the computer system, cause the computer system to instruct the apparatus for disposing of excess material of a photolithographic mask to carry out the method steps of claim 5 .

Assignees

• Zeiss Carl Smt Gmbh

Inventors

• Budach Michael
• Baur Christof
• Edinger Klaus
• Bret Tristan

Classifications

• G03F1/82 Primary

  Auxiliary processes, e.g. cleaning or inspecting · CPC title

• G03F1/72 Primary

  Repair or correction of mask defects · CPC title

• B08B6/00

  Cleaning by electrostatic means · CPC title

• B08B7/026

  Using sound waves · CPC title

• G03F7/70925

  Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning · CPC title