Method and device for adjusting the switching speed of a MOSFET

Patent metadata

Field	Value
Publication number	US-11817849-B2
Application number	US-202017441002-A
Country	US
Kind code	B2
Filing date	Aug 11, 2020
Priority date	Jan 8, 2020
Publication date	Nov 14, 2023
Grant date	Nov 14, 2023

Abstract

A method and device for adjusting the switching speed of a MOSFET are disclosed. The MOSFET is connected to drive switch, the collector of the drive switch is connected to the grid of the MOSFET through the grid resistor, the emitter of the drive switch is grounded through the emitter resistor, and the collector of the drive switch is also connected to the source resistor through the collector resistor, the other end of the source resistor is connected to the source of the MOSFET; the drain of the MOSFET is connected to the current source. The method comprises: obtaining the adjustment target of the switching speed for the MOSFET, determining the first resistance value of the emitter resistor and/or the second resistance value of the collector resistor based on said adjustment target, controlling the operation of the MOSFET according to the adjusted resistance value.

First claim

What is claimed is:

1. A method of adjusting the switching speed of a MOSFET, the method comprising
controlling the switching speed of the MOSFET via a drive switch, a gate resistor, an emitter resistor, and a source resistor, wherein a collector of said drive switch is connected to a gate of said MOSFET through the gate resistor, an emitter of said drive switch is grounded through the emitter resistor, the collector of said drive switch is connected to a first end of the source resistor through the collector resistor, the other end of said source resistor is connected to the source of said MOSFET, the drain of said MOSFET is connected to a current source;
adjusting the switching speed of said MOSFET to an adjustment target by adjusting a first resistance value of said emitter resistor and/or a second resistance value of said collector resistor based on said adjustment target,
wherein adjusting the first resistance value of said emitter resistor and/or the second resistance value of said collector resistor based on said adjustment target comprises:
a, adjusting the turn-on speed by altering the first resistance value of said emitter resistor, and/or
b, adjusting the turn-off speed by altering the second resistance value of said collector resistor.

2. A method according to claim 1 , is characterized in that, the turn-on speed indicated by said first adjustment target is negatively correlated with said first resistance value, the turn-off speed indicated by said second adjustment target is negatively correlated with said second resistance value.

3. A method according to claim 1 , is characterized in that, said method of determining the first resistance value of said emitter resistor based on said first adjustment target, comprises:
obtaining the first corresponding relationship between the turn-on speed and the resistance value of said emitter resistor,
determining the first resistance value corresponding to the turn-on speed that is indicated by said first adjustment target, according to said first corresponding relationship.

4. A method according to claim 1 , is characterized in that, said method of determining the second resistance value of said collector resistor based on said second adjustment target, comprises:
obtaining the second corresponding relationship between the turn-off speed and the resistance value of said collector resistor,
determining the second resistance value corresponding to the turn-off speed that is indicated by said second adjustment target, according to said second corresponding relationship.

5. A method according to claim 1 , is characterized in that, said drive switch can be made of PNP-type triode.

6. A method according to claim 1 , is characterized in that, said emitter resistor and said collector resistor can be adjustable resistors.

7. A switching speed adjustment device for MOSFET, is characterized in that,
the switching speed for said MOSFET is controlled via a drive switch, a gate resistor, an emitter resistor, and a source resistor, wherein a collector of said drive switch is connected to a gate of said MOSFET through the gate resistor, an emitter of said drive switch is grounded through the emitter resistor, the collector of said drive switch is connected to a first end of the source resistor through the collector resistor, the other end of said source resistor is connected to the source of said MOSFET, the drain of said MOSFET is connected to a current source, said device comprising:
a resistance determination module for determining a first resistance value of said emitter resistor and/or a second resistance value of said collector resistor based on an adjustment target of the switching speed for said MOSFET;
wherein said adjustment target comprises:
c, a first adjustment target for adjusting the turn-on speed to determine the first resistance value of said emitter resistor, and/or
d, a second adjustment target for adjusting the turn-off speed to determine the second resistance value of said collector resistor; and
an operation control module for controlling the operation of said MOSFET according to the first resistance value and/or the second resistance value.

8. A device according to claim 7 , is characterized in that, the turn-on speed indicated by said first adjustment target is negatively correlated with said first resistance value, the turn-off speed indicated by said second adjustment target is negatively correlated with said second resistance value.

Assignees

• Univ Soochow

Inventors

• Zhong Bowen
• Zhang Daqian
• Sun Lining

Classifications

• H03K17/04106 Primary

  in field-effect transistor switches (H03K17/0412, H03K17/0416 take precedence) · CPC title

• H03K17/04 Primary

  Modifications for accelerating switching · CPC title