Optical systems and methods of characterizing high-k dielectrics

Patent metadata

Field	Value
Publication number	US-11808706-B2
Application number	US-202117147371-A
Country	US
Kind code	B2
Filing date	Jan 12, 2021
Priority date	Sep 3, 2015
Publication date	Nov 7, 2023
Grant date	Nov 7, 2023

Abstract

The disclosed technology generally relates to characterization of semiconductor structures, and more particularly to optical characterization of high-k dielectric materials. A method includes providing a semiconductor structure comprising a semiconductor and a high-k dielectric layer formed over the semiconductor, wherein the dielectric layer has electron traps formed therein. The method additionally includes at least partially transmitting an incident light having an incident energy through the high-k dielectric layer and at least partially absorbing the incident light in the semiconductor. The method additionally includes measuring a nonlinear optical spectrum resulting from the light having the energy different from the incident energy, the nonlinear optical spectrum having a first region and a second region, wherein the first region changes at a different rate in intensity compared to the second region. The method further includes determining from the nonlinear optical spectrum one or both of a first time constant from the first region and a second time constant from the second region, and determining a trap density in the high-k dielectric layer based on the one or both of the first time constant and the second time constant.

First claim

What is claimed is:

1. A method of characterizing defects in dielectrics, the method comprising:
providing a semiconductor structure comprising a semiconductor substrate and a dielectric layer formed above the semiconductor substrate, wherein the dielectric layer has structural defects formed therein;
providing incident light having an incident photon energy that is at least partially transmitted through the dielectric layer and at least partially absorbed by a semiconductor layer of the semiconductor structure, wherein the incident photon energy is sufficient to cause charge carriers to be transported from the semiconductor layer to charge carrier traps associated with the defects and to cause generation of light having a photon energy different from the incident photon energy;
measuring a temporal variation of the light having the photon energy different from the incident photon energy, the temporal variation having a first time-varying region and a second time-varying region, wherein the first time-varying region changes at a different rate in intensity compared to the second time-varying region;
determining from the temporal variation one or both of a first time constant from the first time-varying region and a second time constant from the second time-varying region; and
determining a density of the charge carrier traps in the dielectric layer based on one or both of the first time constant and the second time constant.

2. The method of claim 1 , wherein providing the semiconductor structure comprises providing an Hf-based high-k dielectric layer above a silicon substrate.

3. The method of claim 2 , wherein structural defects comprise electrically active defects.

4. The method of claim 1 , wherein providing the semiconductor structure further comprises providing an interfacial layer interposed between the semiconductor layer and the dielectric layer.

5. The method of claim 4 , wherein a combined physical thickness the dielectric layer and the interfacial layer is sufficiently small to enable transportation of the charge carriers from the semiconductor layer to the charge carrier traps by tunneling from the semiconductor layer to the charge carrier traps within a time duration of measuring the temporal variation.

6. The method of claim 1 , wherein the first time constant in the first time-varying region is associated at least with a trapping rate of the charge carriers by the charge carrier traps, and wherein the second time constant in the second time-varying region is associated at least with a detrapping rate of charge carriers from the charge carrier traps.

7. The method of claim 1 , comprising determining the first time constant from the first time-varying region and the second time constant from the second time-varying region, and determining the charge carrier trap density in the dielectric layer based on both the first time constant and the second time constant.

8. The method of claim 7 , wherein determining the carrier trap density comprises numerically solving a partial differential equation relating a rate of change of filled traps with inverses of the first time constant and the second time constant.

9. The method of claim 8 , wherein the partial differential equation is expressed as:

∂

n
t

⁡

(

x
,
t

)

∂
t

=

[

N
t

-

n
t

⁡

(

x
,
t

)

]

τ
1

-

n
t

⁡

(

x
,
t

)

τ
2

,

wherein n t (x,t) is a filled electron trap concentration in the dielectric layer, N t is a total electron trap concentration, τ 1 is the first time constant and τ 2 is the second time constant.

10. The method of any of claim 1 , wherein the incident photon energy is sufficient to cause second harmonic generation (SHG), and wherein measuring the temporal variation of the light having the photon energy different from the incident photon energy comprises measuring a temporal variation of the second harmonic of the incident light.

11. The method of claim 1 , wherein the first time-varying region changes at a faster rate in intensity compared to the second time-varying region.

12. The method of claim 1 , wherein the incident photon energy is sufficient to fill a sufficient number of the carrier traps in the dielectric layer to cause the generation of a saturated second harmonic of the incident light and wherein measuring the temporal variation comprises measuring the saturated second harmonic of the incident light.

13. The method of claim 1 , wherein the charge carriers are electrons.

14. The method of claim 1 , wherein the charge carriers are holes.

15. The method of claim 1 , wherein measuring a temporal variation of the light having the photon energy different from the incident photon energy, comprises measuring the intensity or power of the light having the photon energy different from the incident photon energy.

Assignees

• California Inst Of Techn

Inventors

• Adell Philippe C
• Atwater Harry A

Classifications

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10D64/118

  Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges · CPC title

• H10D64/691

  comprising metallic compounds, e.g. metal oxides or metal silicates  (insulators comprising nitrogen H10D64/693) · CPC title

• H10D64/685

  being perpendicular to the channel plane · CPC title

• H10D64/514

  characterised by the insulating layers · CPC title