Optical modulating device having gate structure
US-2016223723-A1 · Aug 4, 2016 · US
US9851589B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9851589-B2 |
| Application number | US-201615233036-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 10, 2016 |
| Priority date | Aug 10, 2015 |
| Publication date | Dec 26, 2017 |
| Grant date | Dec 26, 2017 |
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A meta-structure and a tunable optical device including the same are provided. The meta-structure includes a plurality of metal layers spaced apart from one another, an active layer spaced apart from the plurality of metal layers and having a carrier concentration that is tuned according to an electric signal applied to the active layer and the plurality of metal layers, and a plurality of dielectric layers spaced apart from one another and each having one surface contacting a metal layer among the plurality of metal layers and another surface contacting the active layer.
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What is claimed is: 1. A meta-structure comprising: a plurality of metal layers spaced apart from one another; an active layer spaced apart from the plurality of metal layers and having a carrier concentration that is tuned according to an electric signal applied to the active layer and the plurality of metal layers; and a plurality of dielectric layers spaced apart from one another and each having one surface contacting a metal layer among the plurality of metal layers and another surface contacting the active layer. 2. The meta-structure of claim 1 , further comprising a voltage-applying portion configured to apply a voltage between the active layer and the plurality of dielectric layers to generate the electrical signal. 3. The meta-structure of claim 2 , wherein the voltage-applying portion is configured to a same voltage between the active layer and each of the plurality of metal layers. 4. The meta-structure of claim 2 , wherein, when a voltage is applied between the active layer and the plurality of metal layers, carrier accumulation layers having a tunable charge density are formed on ends of the active layer that contact the plurality of dielectric layers among regions of the active layer. 5. The meta-structure of claim 2 , wherein the active layer comprises a transparent conductive oxide, a nitride, or a doped semiconductor material. 6. The meta-structure of claim 1 , wherein the dielectric layer comprises any one among SiO 2 , Al 2 O 3 , HfO 2 , HfSiO 4 , a transition metal oxide, and electrochromic polymer. 7. The meta-structure of claim 1 , wherein a dielectric breakdown electric field E br and a direct current (DC) dielectric constant k diel of one of the dielectric layers satisfy the following equation: k diel E br ≥ | e | Nd ɛ 0 , where N is a carrier concentration of the carrier accumulation layers, e is a quantity of electric charge of electrons, ∈ 0 is a permittivity of a vacuum, and d is a Debye length. 8. The meta-structure of claim 1 , wherein the metal layer comprises one among Cu, Al, Ni, Fe, Co, Zn, Ti, Ru, Rh, Pd, Pt, Ag, Os, Ir, Au, and TiN. 9. A tunable optical device comprising: a meta-structure comprising: a plurality of metal layers spaced apart from one another; an active layer spaced apart from the plurality of metal layers and having a carrier concentration that is tuned according to an electric signal applied to the active layer and the plurality of metal layers; and a plurality of dielectric layers spaced apart from one another and each having one surface contacting a metal layer among the plurality of metal layers and another surface contacting the active layer, a voltage-applying portion configured to apply a voltage between the active layer and the plurality of metal layers to generate the electric signal; and a controller configured to control the voltage to be applied between the active layer and the plurality of metal layers by the voltage-applying portion according to an optical property to be controlled in the meta-structure. 10. The tunable optical device of claim 9 , wherein the controller is configured to control the voltage so that birefringence of the meta-structure is tuned. 11. The tunable optical device of claim 9 , wherein the controller is configured to control the voltage so that dichroism of the meta-structure is tuned. 12. The tunable optical device of claim 9 , wherein the controller is configured to control the voltage so that an optical band gap of the meta-structure is tuned. 13. The tunable optical device of claim 9 , further comprising: a plurality of meta-structures arranged two-dimensionally; and a circuit board comprising a circuit element configured to apply a voltage to each of the plurality of meta-structures. 14. The tunable optical device of claim 13 , wherein an extraordinary axis of each of the meta-structures is defined as a direction along which the plurality of metal layers, the active layer, and the plurality of dielectric layers are spaced apart, and the extraordinary axis of each of the meta-structures is in parallel to a plane defined by the two-dimensional arrangement. 15. The tunable optical device of claim 13 , wherein an extraordinary axis of each of the meta-structures is defined as a direction along which the plurality of metal layers, the active layer, and the plurality of dielectric layers are spaced apart, and the extraordinary axis of each of the meta-structures is perpendicular to a plane defined by the two-dimensional arrangement. 16. A display apparatus comprising: a first substrate comprising a first polarization plate; a second substrate comprising a second polarization plate; an optical modulator provided between the first substrate and the second substrate and comprising a plurality of meta-structures, each of the meta-structures comprising: a plurality of metal layers spaced apart from one another; an active layer spaced apart from the plurality of metal layers and having a carrier concentration that is tuned according to an electric signal applied to the active layer and the plurality of metal layers; and a plurality of dielectric layers spaced apart from one another and each having one surface contacting a metal layer among the plurality of metal layers and another surface contacting the active layer; and a circuit board comprising a circuit element configured to apply a voltage to each of the plurality of meta-structures to generate the electrical signal. 17. The display apparatus of claim 16 , further comprising a backlight unit configured to provide light to be modulated by the optical modulator. 18. An optical memory device comprising: a meta-structure comprising: a plurality of metal layers spaced apart from one another; an active layer spaced apart from the plurality of metal layers and having a carrier concentration that is tuned according to an electric signal applied to the active layer and the plurality of metal layers; and a plurality of dielectric layers spaced apart from one another and each having one surface contacting a metal layer among the plurality of metal layers and another surface contacting the active layer; a first quantum emitter and a second quantum emitter, the first and second quantum emitters provided adjacent to the meta-structure and configured to exchange optical energy with each other; and a controller configured to apply a voltage for controlling an optical band gap of the meta-structure to the meta-structure. 19. The optical memory device of claim 18 , wherein the first and second quantum emitters are provided on the meta-structure or embedded in the meta-structure. 20. The optical memory device of claim 18 , wherein the controller is configured to apply a first voltage to the meta-structure when the second quantum emitter is excited by optical energy emitted according to a change of a state of the first quantum emitter and to app
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