Bandgap measurements of patterned film stacks using spectroscopic metrology

US11796390B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11796390-B2
Application numberUS-202217856660-A
CountryUS
Kind codeB2
Filing dateJul 1, 2022
Priority dateAug 7, 2017
Publication dateOct 24, 2023
Grant dateOct 24, 2023

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Abstract

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A spectroscopic metrology system includes a spectroscopic metrology tool and a controller. The controller generates a model of a multilayer grating including two or more layers, the model including geometric parameters indicative of a geometry of a test layer of the multilayer grating and dispersion parameters indicative of a dispersion of the test layer. The controller further receives a spectroscopic signal of a fabricated multilayer grating corresponding to the modeled multilayer grating from the spectroscopic metrology tool. The controller further determines values of the one or more parameters of the modeled multilayer grating providing a simulated spectroscopic signal corresponding to the measured spectroscopic signal within a selected tolerance. The controller further predicts a bandgap of the test layer of the fabricated multilayer grating based on the determined values of the one or more parameters of the test layer of the fabricated structure.

First claim

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What is claimed: 1. A bandgap quantification method, comprising: generating a model of a metrology target, the metrology target including a multilayer grating including a patterned substrate layer and two or more additional layer, the two or more additional layers forming a multilayer stack shaped to conform to at least a portion of the patterned substrate layer, the two or more additional layers including a test layer to be modeled, wherein at least one of a size or spacing of elements of the multilayer pattern are representative of device features to be fabricated on a common sample with the metrology target, the model parameterized with two or more parameters associated with the multilayer grating, wherein the two or more parameters include one or more geometric parameters indicative of at least a size, shape, or periodicity of the test layer within the elements of the multilayer pattern, wherein the two or more parameters include one or more dispersion parameters indicative of a dispersion of at least a bandgap of the test layer including dimension-dependent physical effects associated with the one or more geometric parameters; measuring a spectroscopic signal of a fabricated multilayer grating corresponding to the modeled multilayer grating; determining values of the two or more parameters of the modeled multilayer grating providing a simulated spectroscopic signal corresponding to the measured spectroscopic signal within a selected tolerance; and calculating a metrology metric for the metrology target indicative of a bandgap of the test layer of the fabricated multilayer grating based on the determined values of the two or more parameters. 2. The bandgap quantification method of claim 1 , wherein the metrology metric comprises: an integral of a dispersion curve of the test layer over a transition spectral region, wherein the integral is proportional to the bandgap of the test layer, wherein the dispersion curved is defined by the determined values of the one or more dispersion parameters, wherein the transition region comprises: a range over which the dispersion curve varies exponentially within a selected transition tolerance. 3. The bandgap quantification method of claim 2 , wherein the dispersion curve of the test layer defined by the determined values of the one or more dispersion parameters is reconstructed to include an Urbach tail that varies exponentially within the transition spectral region. 4. The bandgap quantification method of claim 1 , wherein the one or more dispersion parameters comprise: at least one of an extinction coefficient, an imaginary part of a dielectric function, or the bandgap of the test layer. 5. The bandgap quantification method of claim 1 , wherein the one or more geometric parameters comprise: a thickness of at least one layer of the multilayer grating. 6. The bandgap quantification method of claim 1 , wherein the multilayer grating comprises: a grating structure including periodically-distributed elements formed from the two or more layers. 7. The bandgap quantification method of claim 6 , wherein the one or more geometric parameters comprise: at least one of a height of the periodically-distributed elements, or a width of the periodically-distributed elements at a selected height. 8. The bandgap quantification method of claim 1 , wherein the metrology metric is indicative of a leakage current of a transistor device fabricated with a common fabrication process. 9. The bandgap quantification method of claim 8 , further comprising: predicting a performance of the transistor device based on the metrology metric. 10. The bandgap quantification method of claim 1 , further comprising: controlling a process tool for fabricating a transistor device based on the metrology metric. 11. The bandgap quantification method of claim 1 , wherein determining values of the two or more parameters of the modeled multilayer grating providing a simulated spectroscopic signal corresponding to the measured spectroscopic signal within a selected tolerance comprises: determining statistical relationships between particular values of the two or more parameters and particular aspects of the spectroscopic signal of the modeled multilayer grating; and determining values of the two or more parameters of the modeled multilayer grating providing a simulated spectroscopic signal corresponding to the measured spectroscopic signal based on the determined statistical relationships. 12. The bandgap quantification method of claim 11 , wherein determining statistical relationships between particular values of the two or more parameters and particular aspects of the spectroscopic signal of the modeled multilayer grating comprises: simulating the spectroscopic signal of the modeled multilayer grating with a plurality of values of the one or more parameters; and determining the statistical relationships between particular values of the two or more parameters and particular aspects of the spectroscopic signal of the modeled multilayer grating based on the simulated spectroscopic signals. 13. The bandgap quantification method of claim 11 , wherein determining statistical relationships between particular values of the two or more parameters and particular aspects of the spectroscopic signal of the modeled multilayer grating comprises: generating a reference sample including a plurality of instances of the multilayer grating fabricated with a plurality of values of the two more parameters; measuring spectroscopic signals of the plurality of instances of the multilayer grating on the reference sample; measuring the values of the two or more parameters for the plurality of instances of the multilayer grating on the reference sample with a metrology tool; and determining the statistical relationships between particular values of the two or more parameters and particular aspects of the spectroscopic signal of the modeled multilayer grating based on the measured spectroscopic signals. 14. The bandgap quantification method of claim 1 , wherein determining values of the two or more parameters of the modeled multilayer grating providing a simulated spectroscopic signal corresponding to the measured spectroscopic signal within a selected tolerance comprises: calculating the values of the two or more parameters as regression parameters to minimize differences between a simulated spectroscopic signal of the modeled multilayer grating and the measured spectroscopic signal of the fabricated multilayer grating within the selected tolerance.

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Inventors

Classifications

  • G01J3/18Primary

    using diffraction elements, e.g. grating (gratings per se G02B) · CPC title

  • Investigating the spectrum (using colour filters G01J3/51) · CPC title

  • Polarisation-affecting properties (G01N21/19 takes precedence) · CPC title

  • G01N21/25Primary

    Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands · CPC title

  • Specular reflectivity · CPC title

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What does patent US11796390B2 cover?
A spectroscopic metrology system includes a spectroscopic metrology tool and a controller. The controller generates a model of a multilayer grating including two or more layers, the model including geometric parameters indicative of a geometry of a test layer of the multilayer grating and dispersion parameters indicative of a dispersion of the test layer. The controller further receives a spect…
Who is the assignee on this patent?
Kla Corp
What technology area does this patent fall under?
Primary CPC classification G01J3/18. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Oct 24 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).