Substrate liquid processing apparatus, substrate liquid processing method and recording medium

Patent metadata

Field	Value
Publication number	US-11795546-B2
Application number	US-201816767278-A
Country	US
Kind code	B2
Filing date	Nov 22, 2018
Priority date	Nov 28, 2017
Publication date	Oct 24, 2023
Grant date	Oct 24, 2023

Abstract

A substrate processing apparatus includes a substrate holder configured to horizontally hold and rotate a substrate which has a recess and a base metal layer exposed from a bottom surface of the recess; and a pre-cleaning liquid supply configured to supply a pre-cleaning liquid such as dicarboxylic acid or tricarboxylic acid onto the substrate being held and rotated by the substrate holder, to thereby pre-clean the base metal layer. A temperature of the pre-cleaning liquid on the substrate is equal to or higher than 40° C.

First claim

We claim:

1. A substrate liquid processing method, comprising:
horizontally holding and rotating a substrate which has a recess and a base metal layer exposed from a bottom surface of the recess;
supplying a first pre-cleaning liquid onto the substrate to accelerate oxidation of the base metal layer, the first pre-cleaning liquid being an alkaline cleaning liquid; and
after the supplying of the first pre-cleaning liquid, pre-cleaning the base metal layer by supplying a second pre-cleaning liquid onto the substrate being rotated, the second pre-cleaning liquid being dicarboxylic acid or tricarboxylic acid,
wherein a temperature of the second pre-cleaning liquid on the substrate is equal to or higher than 40º C.

2. The substrate liquid processing method of claim 1 , further comprising:
supplying a plating liquid onto the pre-cleaned substrate.

3. The substrate liquid processing method of claim 2 ,
wherein the temperature of the second pre-cleaning liquid is within ±5° C. of a temperature of the plating liquid.

4. The substrate liquid processing method of claim 2 ,
wherein the supplying of the plating liquid is performed after the second pre-cleaning liquid of the base metal layer without rinsing the substrate in between.

5. The substrate liquid processing method of claim 1 ,
wherein the temperature of the second pre-cleaning liquid is in a range from 60° C. to 70° C.

6. The substrate liquid processing method of claim 1 , further comprising:
deaerating the second pre-cleaning liquid before being supplied onto the substrate.

7. A non-transitory computer-readable recording medium having stored thereon computer-executable instructions that, in response to execution, cause a substrate liquid processing apparatus to perform a substrate liquid processing method as claimed in claim 1 .

Assignees

• Tokyo Electron Ltd

Inventors

• Tanaka Takashi
• Fujita Keiichi
• Inatomi Yuichiro

Classifications

• H10P70/20

  Cleaning during device manufacture · CPC title

• H10W20/057

  by selectively depositing, e.g. by using selective CVD or plating · CPC title

• H10P72/0406

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title

• H10P70/234 Primary

  the processing being the formation of vias or contact holes · CPC title

• C23C18/1803 Primary

  of metallic material surfaces or of a non-specific material surfaces · CPC title