Capacitor, method of controlling the same, and transistor including the same

Patent metadata

Field	Value
Publication number	US-11765887-B2
Application number	US-202017116097-A
Country	US
Kind code	B2
Filing date	Dec 9, 2020
Priority date	May 13, 2020
Publication date	Sep 19, 2023
Grant date	Sep 19, 2023

Abstract

A capacitor comprises a first electrode, a second electrode provided on the first electrode, a ferroelectric film provided between the first electrode and the second electrode, and a dielectric film provided between the ferroelectric film and the second electrode, impedance of the ferroelectric film and impedance of the dielectric film are determined such that a control voltage applied between the first electrode and the second electrode is equal to a capacitance boosting operating voltage, and the capacitance boosting operating voltage is determined by the following equation:

V
MAX

=

(

1
+

❘
"\[LeftBracketingBar]"

Z
2

❘
"\[RightBracketingBar]"

❘
"\[LeftBracketingBar]"

Z
1

❘
"\[RightBracketingBar]"

)

⁢

t
F

⁢

E
FM

where V MAX is a capacitance boosting operating voltage, Z 1 is impedance of the ferroelectric film, Z 2 is impedance of the dielectric film, t F is a thickness of the ferroelectric film, and E FM is an electric field applied to the ferroelectric film having a maximum polarization.

First claim

What is claimed is:

1. An electronic device comprising:
a first electrode;
a second electrode on the first electrode;
a ferroelectric film between the first electrode and the second electrode, the ferroelectric film having a first impedance; and
a dielectric film between the ferroelectric film and the second electrode, the dielectric film having a second impedance,
wherein the ferroelectric film and the dielectric film are configured to have a capacitance boosting operating voltage substantially equal to a control voltage applied between the first electrode and the second electrode, and
wherein the capacitance boosting operating voltage is determined by the following equation:

V
MAX

=

(

1
+

❘
"\[LeftBracketingBar]"

Z
2

❘
"\[RightBracketingBar]"

❘
"\[LeftBracketingBar]"

Z
1

❘
"\[RightBracketingBar]"

)

⁢

t
F

⁢

E
FM

where V MAX is the capacitance boosting operating voltage, Z 1 is the first impedance, Z 2 is the second impedance, t F is a thickness of the ferroelectric film, and E FM is an electric field applied to the ferroelectric film having a maximum polarization change.

2. The electronic device of claim 1 , wherein
the first impedance (Z 1 ) is determined based on a conductance component (G 1 ) of the ferroelectric film and a capacitance component (C 1 ) of the ferroelectric film, and
the second impedance (Z 2 ) is determined based on a conductance component (G 2 ) of the dielectric film and a capacitance component (C 2 ) of the dielectric film.

3. The electronic device of claim 1 , wherein
an angular frequency of the control voltage is determined such that the control voltage is equal to the capacitance boosting operating voltage, and
the capacitance boosting operating voltage is determined by the following equation:

V
MAX

=

(

1
+

G
1
2

+

ω
⁢

C
1
2

G
2
2

+

ω
2

⁢

C
2
2

)

⁢

t
F

(

2
⁢
α
⁢

P
S

+

4
⁢
β
⁢

P
S
3

)

where

G
1
2

+

ω
2

⁢

C
1
2

G
2
2

+

ω
2

⁢

C
2
2

represents the

❘
"\[LeftBracketingBar]"

Z
2

❘
"\[RightBracketingBar]"

❘
"\[LeftBracketingBar]"

Z
1

❘
"\[RightBracketingBar]"

,

represents the E FM , G 1 is conductance of the ferroelectric film, C 1 is capacitance of the ferroelectric film, G 2 is conductance of the dielectric film, C 2 is capacitance of the dielectric film, ω is the angular frequency of the control voltage, Ps is polarization of the ferroelectric film when the electric field is applied to the ferroelectric film, α is a stability parameter, and β is a skewness parameter.

4. The electronic device of claim 1 , wherein the magnitude ratio

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Jaeho
• Park Boeun
• Kim Yongsung
• Lee Jooho

Classifications

• H10W44/601 Primary

  Capacitive arrangements (H10W44/20 takes precedence) · CPC title

• H10D1/041

  of capacitors having no potential barriers · CPC title

• H10D30/701

  IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs · CPC title

• H10D64/689

  having ferroelectric layers · CPC title

• H10D1/684 Primary

  the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers · CPC title