Pattern forming method, resist pattern formed by the method, method for manufacturing electronic device using the same, and electronic device
US-9448482-B2 · Sep 20, 2016 · US
US11754922B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11754922-B2 |
| Application number | US-202117304622-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 23, 2021 |
| Priority date | Jul 7, 2020 |
| Publication date | Sep 12, 2023 |
| Grant date | Sep 12, 2023 |
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A resist composition containing a resin component (A1) having a constitutional unit derived from a compound represented by General Formula (a01-1). In the formula, W01 represents a polymerizable group-containing group, Ct represents a tertiary carbon atom, and Xt represents a group that forms a monocyclic or polycyclic alicyclic group together with Ct, Ra1 to Ra3 represents a hydrocarbon group having 1 to 10 carbon atoms, which may have a substituent, or a hydrogen atom, or two or more of Ra1 to Ra3 are bonded to each other to form an aliphatic ring, not all of Ra1 to Ra3 are hydrogen atoms, n represents 0 or 1
Opening claim text (preview).
What is claimed is: 1. A resist composition which generates an acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the resist composition comprising: a resin component (A1) which exhibits changed solubility in a developing solution under action of acid, wherein the resin component (A1) has a constitutional unit (a01) derived from a compound represented by General Formula (a01-1): wherein W 01 represents a polymerizable group-containing group, C t represents a tertiary carbon atom, X t represents a group that forms a monocyclic or polycyclic alicyclic group together with C t , wherein part or all of hydrogen atoms which the monocyclic or polycyclic alicyclic group has may be substituted with a substituent, Ra 1 to Ra 3 each independently represents a hydrocarbon group having 1 to 10 carbon atoms, which may have a substituent, or a hydrogen atom, or two or more of Ra 1 to Ra 3 are bonded to each other to form an aliphatic ring, provided that not all of Ra 1 to Ra 3 are hydrogen atoms, and n represents 0 or 1. 2. The resist composition according to claim 1 , wherein a proportion of the constitutional unit (a01) in the resin component (A1) is in a range of 30% to 70% by mole with respect to all constitutional units (100% by mole) constituting the resin component (A1). 3. The resist composition according to claim 1 , wherein in General Formula (a01-1), at least one of Ra 2 and Ra 3 represents a hydrocarbon group having 1 to 10 carbon atoms, which may have a substituent, or two or more of Ra 1 to Ra 3 are bonded to each other to form an aliphatic ring. 4. A method of forming a resist pattern, comprising: forming a resist film on a support using the resist composition according to claim 1 ; exposing the resist film; and developing the exposed resist film to form a resist pattern. 5. The method of forming a resist pattern according to claim 4 , wherein the resist film is exposed with extreme ultraviolet (EUV) rays or electron beam (EB).
the macromolecular compound having an alicyclic moiety in a side chain · CPC title
Photosensitive materials (G03F7/12, G03F7/14 take precedence) · CPC title
Macromolecular compounds which are photodegradable, e.g. positive electron resists (G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023) · CPC title
Phenols or alcohols · CPC title
Macromolecular compounds which are rendered insoluble or differentially wettable (G03F7/075 takes precedence; macromolecular azides G03F7/012; macromolecular diazonium compounds G03F7/021) · CPC title
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