Chemically amplified positive resist composition and resist pattern forming process
US-12164231-B2 · Dec 10, 2024 · US
US2016202608A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016202608-A1 |
| Application number | US-201615079753-A |
| Country | US |
| Kind code | A1 |
| Filing date | Mar 24, 2016 |
| Priority date | Sep 26, 2013 |
| Publication date | Jul 14, 2016 |
| Grant date | — |
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A radiation-sensitive resin composition comprises: a polymer, and a radiation-sensitive acid generator. The polymer comprises a structural unit comprising: an acid-labile group; and an oxoacid group or phenolic hydroxyl group protected by the acid-labile group. The acid-labile group is represented by formula (1). R 1 and R 2 each independently represent a divalent organic group having 1 to 20 carbon atoms. R 3 represents a monovalent group having 1 to 40 atoms and having at least one selected from the group consisting of an oxygen atom, a sulfur atom and a nitrogen atom. * denotes a binding site to the oxy group in the oxoacid group or phenolic hydroxyl group protected.
Opening claim text (preview).
1 . A radiation-sensitive resin composition comprising: a polymer comprising a structural unit comprising: an acid-labile group; and an oxoacid group or phenolic hydroxyl group protected by the acid-labile group; and a radiation-sensitive acid generator, wherein the acid-labile group is represented by formula (1): wherein, in the formula (1), R 1 and R 2 each independently represent a divalent organic group having 1 to 20 carbon atoms; R 3 represents a monovalent group having 1 to 40 atoms and comprising an oxygen atom, a sulfur atom, a nitrogen atom or a combination thereof; k is an integer of 0 to 4; n is an integer of 1 to 13; R 4 represents a halogen atom, a monovalent hydrocarbon group having 1 to 10 carbon atoms or an alkoxy group having 1 to 10 carbon atoms; m is an integer of 0 to 12, wherein a sum of m and n is no greater than 13, in a case where n is no less than 2, a plurality of R 2 s are identical or different, and a plurality of R 3 s are identical or different, and in a case where m is no less than 2, a plurality of R 4 s are identical or different; and * denotes a binding site to the oxy group in the oxoacid group or phenolic hydroxyl group protected. 2 . The radiation-sensitive resin composition according to claim 1 , wherein the divalent organic group represented by R 1 in the formula (1) is represented by any one of formulae (a-1) to (a-3): wherein, in the formulae (a-1) to (a-3), * denotes a binding site to the oxy group in the oxoacid group or phenolic hydroxyl group protected; and ** denotes a site bound to the aromatic ring in the formula (1), in the formula (a-1), R 5 and R 6 each independently represent a monovalent chain hydrocarbon group having 1 to 10 carbon atoms, a monovalent alicyclic hydrocarbon group having 3 to 10 carbon atoms, a group having —COO— between two adjacent carbon atoms in the chain hydrocarbon group or the alicyclic hydrocarbon group, or a group obtained by substituting a part of hydrogen atoms included in the chain hydrocarbon group or the alicyclic hydrocarbon group with a fluorine atom or a hydroxy group; and R 7 represents a single bond or a divalent hydrocarbon group having 1 to 18 carbon atoms, in the formula (a-2), R 8 represents a substituted or unsubstituted divalent alicyclic hydrocarbon group having 3 to 20 carbon atoms, and in the formula (a-3), R 9 represents a substituted or unsubstituted tetravalent alicyclic hydrocarbon group having 5 to 20 ring atoms and having a double bond; and R a and R b each independently represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 10 carbon atoms. 3 . The radiation-sensitive resin composition according to claim 1 , wherein in the formula (1), the monovalent group represented by R 3 is —OH, —COR, —COOR, —OCOCOOR or —CONR 2 ; and R represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 10 carbon atoms. 4 . The radiation-sensitive resin composition according to claim 1 , wherein in the formula (1), the divalent organic group represented by R 2 is a substituted or unsubstituted alkanylidene group or a substituted or unsubstituted cycloalkanylidene group. 5 . The radiation-sensitive resin composition according to claim 1 , wherein the structural unit is represented by any one of formulae (1-1) to (1-3): wherein, in the formulae (1-1) to (1-3), Z represents the acid-labile group represented by the formula (1), in the formula (1-1), R 10 represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group, in the formula (1-2), R 11 represents a hydrogen atom or a methyl group; R 12 represents a single bond, —O—, —COO— or —COHN—; R 13 represents a monovalent organic group having 1 to 10 carbon atoms; and a is an integer of 0 to 4, wherein in a case where a is no less than 2, a plurality of R 13 s are identical or different, in the formula (1-3), R 14 represents a hydrogen atom or a methyl group; R 15 , R 16 and R 17 each independently represent a hydrogen atom, a halogen atom, a hydroxy group or a monovalent organic group having 1 to 20 carbon atoms, or at least two of one or more R 15 (s), one or more R 16 (s) and R 17 optionally taken together represent a ring structure having 3 to 20 ring atoms together with the carbon atom to which the at least two bond; b is an integer of 1 to 4, wherein in a case where b is no less than 2, a plurality of R 15 s are identical or different, and a plurality of R 16 s are identical or different; R 18 represents a single bond or a divalent organic group having 1 to 20 carbon atoms, or R 17 and R 18 optionally taken together represent a ring structure having 3 to 20 ring atoms together with the carbon atom to which R 17 and R 18 bond. 6 . A resist pattern-forming method comprising: applying the radiation-sensitive resin composition according to claim 1 directly or indirectly on a substrate to form a resist film; exposing the resist film; and developing the resist film exposed. 7 . The resist pattern-forming method according to claim 6 , wherein a radioactive ray used in the exposing is a KrF excimer laser beam, an electron beam or an extreme ultraviolet ray.
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