Pattern forming method, resist pattern formed by the method, method for manufacturing electronic device using the same, and electronic device

Patent metadata

Field	Value
Publication number	US-9448482-B2
Application number	US-201514719830-A
Country	US
Kind code	B2
Filing date	May 22, 2015
Priority date	Nov 26, 2012
Publication date	Sep 20, 2016
Grant date	Sep 20, 2016

Abstract

There is provided a pattern forming method including (1) forming a film by an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A) capable of increasing the polarity by the action of an acid so that a solubility thereof in a developer containing an organic solvent is decreased, (2) exposing the film, (3) developing the film by a developer including an organic solvent to form a negative pattern having a space part obtained by removing a part of the film and a residual film part which is not removed by the developing, (4) forming a resist film for reversing a pattern, on the negative pattern, so as to be embedded in the space part in the negative pattern, and (5) reversing the negative pattern into a positive pattern by removing the residual film part in the negative pattern by using an alkaline wet etching liquid.

First claim

What is claimed is:

1. A pattern forming method comprising:
(1) forming a film by an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A) capable of increasing the polarity by the action of an acid so that a solubility thereof in a developer containing an organic solvent is decreased;
(2) exposing the film;
(3) developing the film by a developer including an organic solvent to form a negative pattern having a space part obtained by removing a part of the film and a residual film part which is not removed by the developing;
(4) forming a resist film for reversing a pattern, on the negative pattern, so as to be embedded in the space part in the negative pattern; and
(5) reversing the negative pattern into a positive pattern by removing the residual film part in the negative pattern by using an alkaline wet etching liquid,
wherein:
in the step (4) of forming a resist film for reversing a pattern, a resist film for reversing a pattern is formed from a composition containing an organic silicon compound having a siloxane bond; and
the organic silicon compound contains at least one substituent selected from the group consisting of a carboxyl group, a hydroxyl group, a phenolic hydroxyl group, an α-trifluoromethylhydroxyl group, and a lactone ring.

2. The pattern forming method according to claim 1 ,
wherein the resin (A) has a repeating unit having a group capable of decomposing by the action of an acid to generate a polar group.

3. The pattern forming method according to claim 1 ,
wherein the exposing is performed by using X-ray, electron beam, or EUV.

4. A resist pattern formed by the pattern forming method according to claim 1 .

5. A method for manufacturing an electronic device, comprising:
providing a substrate for a semiconductor of a circuit board; and
performing the pattern forming method according to claim 1 on the substrate.

6. An electronic device manufactured by the method for manufacturing an electronic device according to claim 5 .

7. A pattern forming method comprising:
(1) forming a film by an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A) capable of increasing the polarity by the action of an acid so that a solubility thereof in a developer containing an organic solvent is decreased;
(2) exposing the film;
(3) developing the film by a developer including an organic solvent to form a negative pattern having a space part obtained by removing a part of the film and a residual film part which is not removed by the developing;
(4) forming a resist film for reversing a pattern, on the negative pattern, so as to be embedded in the space part in the negative pattern; and
(5) reversing the negative pattern into a positive pattern by removing the residual film part in the negative pattern by using an alkaline wet etching liquid,
wherein the resist film for reversing a pattern is formed from a composition containing an organic silicon compound represented by formula (12):
U(OR 44 ) m4 (OR 45 ) m5   (12)

wherein R 44 and R 45 each independently represents an organic group having 1 to 30 carbon atoms, m4+m5 is a valency determined by U, m4 and m5 each independently represents an integer of 0 or more, and U is an element selected from Group III, Group IV, and Group V in the Periodic Table except for silicon.

8. The pattern forming method according to claim 1 ,
wherein the organic silicon compound includes a structure represented by any one of a-1 to a-5 in the following set of formulas (11-a):

wherein R 63′ , R 64′ , and R 68′ each independently represents a straight, branched, or cyclic alkylene group having 1 to 20 carbon atoms or an arylene group having 6 to 20 carbon atoms, and may be substituted with a fluorine atom or a trifluoromethyl group;
R 65′ is a single bond, or a straight, branched or cyclic alkyl group having 1 to 6 carbon atoms;
R 66′ and R 67′ are a hydrogen atom, a fluorine atom, or a straight or branched alkyl group having 1 to 4 carbon atoms, or a fluorinated alkyl group, and at least one of R 66′ and R 67′ includes one or more fluorine atoms;
R 69′ represents a fluorine atom or a trifluoromethyl group;
A′ represents a hydrogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an acyl group, an alkoxycarbonyl group, or an acid-decomposable group;
g, h, and i each independently represents 1 or 2; and
j is an integer of 0 to 4.

9. The pattern forming method according to claim 8 ,
wherein:
the organic silicon compound includes a structure represented by a-2 in the set of formulas (11-a);
R 66′ and R 67′ each independently represents a trifluoromethyl group;
A′ represents a hydrogen atom; and
R 63′ , R 64′ , R 65′ , R 68′ , R 69′ , g, h, i and j each has the same meaning as in claim 8 .

Assignees

• Fujifilm Corp

Inventors

• Iwato Kaoru
• Takeda Takanobu
• Takizawa Hiroo

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P76/2042

  using lasers · CPC title

• H10P76/2041

  Photolithographic processes · CPC title

• H10P50/642

  Chemical etching · CPC title

• G03F7/40 Primary

  Treatment after imagewise removal, e.g. baking · CPC title