Semiconductor device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-11735637-B2
Application number	US-202117400901-A
Country	US
Kind code	B2
Filing date	Aug 12, 2021
Priority date	Mar 2, 2015
Publication date	Aug 22, 2023
Grant date	Aug 22, 2023

Abstract

A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

First claim

What is claimed is:

1. A semiconductor device comprising:
a substrate comprising a trench;
a gate insulating film, the gate insulating film being a thin film disposed in the trench along an interior wall of the substrate; and
a gate electrode, the gate electrode being a thin film isolated in the trench along the interior wall of the substrate;
wherein the gate electrode and the gate insulating film contact to each other in the trench,
wherein the gate electrode comprises a gate conductor and a metal element that is intermingled with the gate conductor,
wherein the metal element comprises lanthanum (La), strontium (Sr), silicon (Si), yttrium (Y), lithium (Li), manganese (Mn), or a combination thereof,
wherein the gate insulating film has a uniform thickness along the interior wall of the substrate, and
wherein a thickness of the gate insulating film is about 1 nm to about 30 nm.

2. The semiconductor device of claim 1 , wherein the gate conductor comprises a titanium-containing conductor.

3. The semiconductor device of claim 2 , wherein the gate conductor comprises titanium, titanium nitride, titanium oxynitride, or a combination thereof.

4. The semiconductor device of claim 1 , wherein the gate conductor is chemically bonded with the metal element.

5. The semiconductor device of claim 1 , wherein an amount of the metal element is in a range from about 0.01 at % to about 10 at % based on a total atom number of the gate conductor and the metal element.

6. The semiconductor device of claim 1 , wherein the gate electrode has a uniform thickness along the interior wall of the substrate.

7. The semiconductor device of claim 6 , wherein a thickness of the gate electrode is about 1 nm to 30 nm.

8. The semiconductor device of claim 1 , wherein the gate insulating film comprises silicon oxide, metal oxide, or a combination thereof.

9. The semiconductor device of claim 1 , further comprising a filling metal on the gate electrode in the trench, the filling metal being different from the gate conductor and the metal element.

10. The semiconductor device of claim 9 , wherein the filling metal is tungsten or tungsten alloy.

11. The semiconductor device of claim 1 , further comprising a source electrode and a drain electrode disposed on both sides of the trench, the source electrode and the drain electrode are doped with an n-type impurity or a p-type impurity.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Cho Eunae
• Lee Dongjin
• Lee Ji Eun
• Jung Kyoung-Ho
• Ko Dong Su
• Kim Yongsu
• Yoo Jiho
• Heo Sung
• Park Hyun
• Yamada Satoru
• Jeong Moonyoung
• Kim Sungjin
• Park Gyeongsu
• Lim Han Jin

Classifications

• H10D64/01318

  the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN (comprising a layer of alloys of Si, Ge or C H10D64/01314) · CPC title

• H10D64/68

  characterised by the insulator, e.g. by the gate insulator · CPC title

• H10D64/513 Primary

  within recesses in the substrate, e.g. trench gates, groove gates or buried gates · CPC title

• H10D64/691

  comprising metallic compounds, e.g. metal oxides or metal silicates  (insulators comprising nitrogen H10D64/693) · CPC title

• H10D64/685

  being perpendicular to the channel plane · CPC title