Semiconductor device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-11127828-B2
Application number	US-201916432298-A
Country	US
Kind code	B2
Filing date	Jun 5, 2019
Priority date	Mar 2, 2015
Publication date	Sep 21, 2021
Grant date	Sep 21, 2021

Abstract

A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

First claim

What is claimed is:

1. A semiconductor device comprising:
a substrate comprising a trench;
a gate insulating film disposed in the trench;
a gate electrode disposed in the trench and forming a space in the trench, the gate electrode being disposed on the gate insulating film; and
a filling metal disposed on the gate electrode and filling the space formed in the trench,
wherein the gate electrode comprises a gate conductor and a metal atom that is distributed in the gate conductor,
wherein an effective work function of the gate electrode is different from an effective work function of the gate conductor,
wherein the gate insulating film and the gate electrode are a thin film disposed in the trench along an interior wall of the substrate, respectively,
wherein the gate conductor comprises a titanium-containing conductor, and
wherein the metal atom comprises lanthanum (La), strontium (Sr), yttrium (Y), lithium (Li), manganese (Mn), or a combination thereof.

2. The semiconductor device of claim 1 , wherein the effective work function of the gate electrode is different from the effective work function of the gate conductor by about 0.10 eV to about 1.40 eV.

3. The semiconductor device of claim 1 , wherein the effective work function of the gate electrode is less than the effective work function of the gate conductor.

4. The semiconductor device of claim 1 , wherein the effective work function of the gate electrode is in range from about 3.1 eV to about 4.7 eV.

5. The semiconductor device of claim 1 , wherein a work function and an electronegativity of the metal atom are less than a work function and an electronegativity of the gate conductor.

6. The semiconductor device of claim 1 , wherein the metal atom has a work function of less than or equal to about 4.20 eV.

7. The semiconductor device of claim 1 , wherein the gate conductor comprises titanium, titanium nitride, titanium oxynitride, or a combination thereof.

8. The semiconductor device of claim 1 , wherein the gate conductor is chemically bonded with the metal atom.

9. The semiconductor device of claim 1 , wherein an amount of the metal atom is in a range from about 0.01 at % to about 10 at % based on a total atom number of the gate conductor and the metal atom.

10. The semiconductor device of claim 1 , wherein the gate insulating film is an oxide film, and the gate electrode contacts the gate insulating film.

11. The semiconductor device of claim 1 , wherein the gate electrode has a uniform thickness along the interior wall of the substrate.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Cho Eunae
• Lee Dongjin
• Lee Ji Eun
• Jung Kyoung-Ho
• Ko Dong Su
• Kim Yongsu
• Yoo Jiho
• Heo Sung
• Park Hyun
• Yamada Satoru
• Jeong Moonyoung
• Kim Sungjin
• Park Gyeongsu
• Lim Han Jin

Classifications

• H10D64/01318

  the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN (comprising a layer of alloys of Si, Ge or C H10D64/01314) · CPC title

• H10D64/68

  characterised by the insulator, e.g. by the gate insulator · CPC title

• H10D64/513 Primary

  within recesses in the substrate, e.g. trench gates, groove gates or buried gates · CPC title

• H10D64/691

  comprising metallic compounds, e.g. metal oxides or metal silicates  (insulators comprising nitrogen H10D64/693) · CPC title

• H10D64/685

  being perpendicular to the channel plane · CPC title