Parent substrate, wafer composite and methods of manufacturing crystalline substrates and semiconductor devices

Patent metadata

Field	Value
Publication number	US-11712749-B2
Application number	US-202016986411-A
Country	US
Kind code	B2
Filing date	Aug 6, 2020
Priority date	Aug 22, 2019
Publication date	Aug 1, 2023
Grant date	Aug 1, 2023

Abstract

Provided is a parent substrate that includes a central region and an edge region. The edge region surrounds the central region. A detachment layer is formed in the central region. The detachment layer extends parallel to a main surface of the parent substrate. The detachment layer includes modified substrate material. A groove is formed in the edge region. The groove laterally encloses the central region. The groove runs vertically and/or tilted to the detachment layer.

First claim

What is claimed is:

1. A method of manufacturing a device substrate, the method comprising:
providing a parent substrate that comprises a central region and an edge region, the edge region surrounding the central region;
forming a detachment layer in the central region, the detachment layer extending parallel to a main surface of the parent substrate and comprising modified substrate material; and
forming a groove in the edge region, the groove laterally enclosing the central region and running vertically and/or tilted to the detachment layer,
wherein the groove laterally delimits the detachment layer such that the detachment layer terminates before reaching the edge region.

2. The method of claim 1 , further comprising:
splitting the parent substrate along a splitting surface through the detachment layer,
wherein a portion of the parent substrate forms the device substrate.

3. The method of claim 1 , wherein in the edge region, a distance between the main surface and a second main surface of the parent substrate opposite the main surface decreases with increasing distance to a lateral center of the parent substrate.

4. The method of claim 1 , wherein the groove extends from a first main surface of the parent substrate into the parent substrate.

5. The method of claim 1 , wherein the groove comprises an inner groove sidewall oriented to a lateral center of the parent substrate, wherein the inner groove sidewall comprises a vertical sidewall section, and wherein the detachment layer cuts the vertical sidewall section.

6. The method of claim 1 , wherein the groove is spaced from a lateral outer surface of the parent substrate.

7. The method of claim 1 , wherein the groove extends inwardly from a lateral outer surface.

8. The method of claim 1 , wherein forming the groove comprises a laser-assisted material removal, wherein the laser-assisted material removal comprises directing a laser beam onto a first main surface of the parent substrate and/or onto a second main surface of the parent substrate, and wherein the second main surface is opposite the first main surface.

9. The method of claim 8 , wherein the laser beam is tilted into a direction of a lateral center of the parent substrate, and wherein an angle between a vertical direction and the laser beam is at least 30 degree.

10. The method of claim 1 , wherein forming the groove comprises a laser-assisted material removal, wherein the laser-assisted material removal comprises directing a laser beam completely or partly onto a lateral outer surface of the parent substrate, wherein the lateral outer surface connects the two main surfaces, and wherein an angle between a propagation direction of the laser beam and a horizontal plane is at least 30 degree.

11. The method of claim 10 , wherein the laser beam is tilted into a direction of a lateral center of the parent substrate, and wherein an angle between a vertical direction and the laser beam is at least 30 degree.

12. The method of claim 1 , further comprising:
connecting an auxiliary carrier and the parent substrate,
wherein the main surface of the parent substrate faces a working surface of the auxiliary carrier, and
wherein the auxiliary carrier and the parent substrate are connected after forming the groove in the main surface or prior to forming the groove in a second main surface of the parent substrate opposite the main surface.

13. The method of claim 12 , wherein connecting the auxiliary carrier and the parent substrate comprises forming an adhesive structure between the working surface of the auxiliary carrier and the central region of the parent substrate.

14. The method of claim 12 , wherein connecting the auxiliary carrier and the parent substrate comprises:
forming an adhesive layer between the working surface of the auxiliary carrier and the first main surface of the parent substrate; and
releasing and/or removing, prior to splitting, a peripheral adhesive portion of the adhesive layer in the edge region.

15. A parent substrate, comprising:
a central region and an edge region, the edge region surrounding the central region;
a detachment layer in the central region, the detachment layer extending parallel to a main surface and comprising modified substrate material; and
a groove in the edge region, the groove laterally enclosing the central region and running vertically and/or tilted to the detachment layer,
wherein the groove laterally delimits the detachment layer such that the detachment layer terminates before reaching the edge region.

16. The parent substrate of claim 15 , wherein in the edge region, a distance between main surfaces of the parent substrate decreases with increasing distance to a lateral center of the parent substrate.

17. The parent substrate of claim 15 , wherein the groove comprises an inner groove sidewall, wherein the inner groove sidewall comprises a vertical sidewall section, and wherein the detachment layer cuts the vertical sidewall section.

18. A wafer composite, comprising:
the parent substrate of claim 15 ; and
an auxiliary carrier attached to the parent substrate,
wherein a first main surface of the parent substrate is oriented to a working surface of the auxiliary carrier.

19. The wafer composite of claim 18 , further comprising:
an adhesive structure between the auxiliary carrier and the central region of the parent substrate,
wherein the adhesive structure is absent between the auxiliary carrier and the edge region of the parent substrate.

20. A parent substrate, comprising:
a central region and an edge region, the edge region surrounding the central region;
a detachment layer in the central region, the detachment layer extending parallel to a main surface and comprising modified substrate material; and
a groove in the edge region, the groove laterally enclosing the central region and running vertically and/or tilted to the detachment layer,
wherein in the edge region, a distance between main surfaces of the parent substrate decreases with increasing distance to a lateral center of the parent substrate.

21. A parent substrate, comprising:
a central region and an edge region, the edge region surrounding the central region;
a detachment layer in the central region, the detachment layer extending parallel to a main surface and comprising modified substrate material; and
a groove in the edge region, the groove laterally enclosing the central region and running vertically and/or tilted to the detachment layer,
wherein the groove comprises an inner groove sidewall, wherein the inner groove sidewall comprises a vertical sidewall section, and wherein the detachment layer cuts the vertical sidewall section.

22. The method of claim 1 , wherein forming the detachment layer in the central region comprises penetrating a laser beam through a second main surface of the parent substrate opposite the main surface to form modified structures in the detachment layer.

23. The method of claim 22 , wherein the modified structures comprise stripes of modified material separated by stripes of non-modified material.

24. The method of claim 23 , further comprising generating microcracks in the detachment layer by mechanical stress induced by thermal heating through the laser beam and/or volume expansion through phase change of the substrate material, wherein the microcracks originate at the stripes of modified material.

25. The parent substrate of claim 1

Assignees

• Infineon Technologies Ag

Inventors

• Rieske Ralf
• Binter Alexander
• Diewald Wolfgang
• Goller Bernhard
• Graf Heimo
• Lackner Gerald
• Richter Jan
• Rupp Roland
• Schagerl Guenter
• Swoboda Marko

Classifications

• H10P95/112 Primary

  leaving a reusable substrate, e.g. epitaxial lift off · CPC title

• H10P14/2904

  Silicon carbide · CPC title

• H10P52/00 Primary

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P90/00

  Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement · CPC title

• B23K26/0624 Primary

  using ultrashort pulses, i.e. pulses of 1 ns or less · CPC title